Journal Publications

1. J. Steele, K. Azizie, N. Pieczulewski, Y. Kim, S. Mou, T.J. Asel, A.T. Neal, D. Jena, H.G. Xing, D.A. Muller, T. Onuma, and D.G. Schlom, “Epitaxial Growth of α-(Al_xGa_1–x)₂O₃ by Suboxide Molecular-Beam Epitaxy at 1 µm/h,” APL Materials 12 (2024) 041113-1 – 041113-12.

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2. B. Cromer, D. Saraswat, N. Pieczulewski, W. Li, K. Nomoto, F.V.E. Hensling, K. Azizie, H.P. Nair, D.G. Schlom, D.A. Muller, D. Jena, and H.G. Xing, “Over 6 MV/cm Operation in β-Ga₂O₃ Schottky Barrier Diodes with IrO₂ and RuO₂ Anodes Deposited by Molecular Beam Epitaxy,” Journal of Vacuum Science and Technology A 42 (2024) 033206-1 – 033206-8.
3. C.T. Parzyck, N.K. Gupta, Y. Wu, V. Anil, L. Bhatt, M. Bouliane, R. Gong, B.Z. Gregory, A. Luo, R. Sutarto, F. He, Y.-D. Chuang, T. Zhou, G. Herranz, L.F. Kourkoutis, A. Singer, D.G. Schlom, D.G. Hawthorn, and K.M. Shen, “Absence of 3a₀ Charge Density Wave Order in the Infinite-Layer Nickelate NdNiO₂,” Nature Materials 23 (2024) 486–491.
4. V.J. Fratello, L.A. Boatner, H.A. Dabkowska, A. Dabkowski, T. Siegrist, K. Wei, C. Guguschev, D. Klimm, M. Brützam, D.G. Schlom, and S. Subramanian, “Solid Solution Perovskite Substrate Materials with Indifferent Points,” Journal of Crystal Growth 634 (2024) 127606-1 – 127606-14.
5. C.T. Parzyck, V. Anil, Y. Wu, B.H. Goodge, M. Roddy, L.F. Kourkoutis, D.G. Schlom, and K.M. Shen, “Synthesis of Thin Film Infinite-Layer Nickelates by Atomic Hydrogen Reduction: Clarifying the Role of the Capping Layer,” APL Materials 12 (2024) 031132-1 – 031132-12.

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6. G. Stone, Y. Shi, M. Jerry, V. Stoica, H. Paik, Z. Cai, D.G. Schlom, R. Engel-Herbert, S. Datta, H. Wen, L.Q. Chen, and V. Gopalan, “In-Operando Spatiotemporal Imaging of Coupled Film-Substrate Elastodynamics During an Insulator-to-Metal Transition,” Advanced Materials 36 (2024) 2312673-1 – 2312673-10.
7. J.P. McCandless, C.A. Gorsak, V. Protasenko, D.G. Schlom, M.O. Thompson, H.G. Xing, D. Jena, and H.P. Nair, “Accumulation and Removal of Si Impurities on β-Ga₂O₃ Arising from Ambient Air Exposure,” Applied Physics Letters 124 (2024) 111601-1 – 111601-5.
8. Y. Hu, D.G. Schlom, S. Datta, and K. Cho, “Ab Initio Design of Pb²⁺-based Ternary Oxides for Phase Stable and Hole Dopable p-Type Oxides,” Chemistry of Materials 36 (2024) 742–751.
9. L.W. Martin, J-P. Maria, and D.G. Schlom, “Lifting the Fog in Ferroelectric Thin-Film Synthesis,” Nature Materials 23 (2024) 9–10.
10. Y-C. Luo, A. Khanna, B. Grisafe, J. Sun, S. Dutta, L.E. Noskin, C. Adamo, A.B. Mei, R.K. Ghosh, M. Colletta, M.E. Holtz, V. Gambin, L.F. Kourkoutis, S. Yu, D.G. Schlom, and S. Datta, “Correlated Oxide Selector for Cross-point Embedded Non-Volatile Memory,” IEEE Transactions on Electron Devices 71 (2024) 916–921.
11. K.T. Smith, C.A. Gorsak, A. Kalra, B.J. Cromer, K. Azizie, D.M. Dryden, D.G. Schlom, D. Jena, H.P. Nair, and H.G. Xing, “Non-Alloyed Ohmic Contacts to (010) β-Ga₂O₃ with Low Contact Resistance,” Applied Physics Letters 123 (2023) 242101-1 – 242101-7.
12. S. Raghuvansy, J.P. McCandless, M. Schowalter, A. Karg, M. Alonso-Orts, M.S. Williams, C. Tessarek, S. Figge, K. Nomoto, H.G. Xing, D.G. Schlom, A. Rosenauer, D. Jena, M. Eickhoff, and P. Vogt, “Growth of β-Ga₂O₃ and ϵ/κ-Ga₂O₃ on AlN(0001) by Molecular-Beam Epitaxy,” APL Materials 11 (2023) 111113.

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13. N.J. Schreiber, L. Miao, H.P. Nair, J.P. Ruf, L. Bhatt, Y.A. Birkholzer, G.N. Kotsonis, L.F. Kourkoutis, K.M. Shen, and D.G. Schlom, “Enhanced T_C in SrRuO₃/DyScO₃(110) Thin Films with High Residual Resistivity Ratio,” APL Materials 11 (2023) 111101-1 – 111101-11.

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14. C.T. Parzyck, C.A. Pennington, W.J.I. DeBenedetti, J. Balajka, E.M. Echeverria, H. Paik, L. Moreschini, B.D. Faeth, C. Hu, J.K. Nangoi, V. Anil, T.A. Arias, M.A. Hines, D.G. Schlom, A. Galdi, K.M. Shen, and J.M. Maxson, “Atomically Smooth Films of CsSb: A Chemically Robust Visible Light Photocathode,” APL Materials 11 (2023) 101125-1 – 111101-11.

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15. C.S. Chang, K.S. Kim, B-I. Park, J. Choi, H. Kim, J. Jeong, M. Barone, N. Parker, S. Lee, X. Zhang, K. Lu, J.M. Suh, J. Kim, D. Lee, N.M. Han, M. Moon, Y.S. Lee, D-H. Kim, D.G. Schlom, Y.J. Hong, and J. Kim, “Remote Epitaxial Interaction through Graphene,” Science Advances 9 (2023) eadj5379.
16. R.S. Russell, H.P. Nair, K.M. Shen, D.G. Schlom, and J.W. Harter, “Electronic Nematic Order in the Normal State of Strontium Ruthenate,” Physical Review B 108 (2023) L081105-1 – L081105-7.

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17. E. Amonette, P. Dulal, D. Sotir, M. Barone, D.G. Schlom, and N.J. Podraza, “Band Gap Energy and Near Infrared to Ultraviolet Complex Optical Properties of Single Crystal TbScO₃,” Applied Physics Letters 123 (2023) 052103-1 – 052103-6.
18. Z. Shao, N. Schnitzer, J. Ruf, O.Y. Gorobtsov, C. Dai, B.H. Goodge, T. Yang, H. Nair, V.A. Stoica, J.W. Freeland, J.P. Ruff, L.Q. Chen, D.G. Schlom, K.M. Shen, L.F. Kourkoutis, and A. Singer, “Real-Space Imaging of Periodic Nanotextures in Thin Films via Phasing of Diffraction Data,” Proceedings of the National Academy of Sciences of the United States of America 120 (2023) e2303312120-1 – e2303312120-7.

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19. 

    N.J. Schreiber, L. Miao, B.H. Goodge, L.F. Kourkoutis, K.M. Shen, and D.G. Schlom, “A Model Heterostructure with Engineered Berry Curvature,” APL Materials 11 (2023) 061117-1 – 061117-7.

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20. H. Huyan, Z. Wang, L. Li, X. Yan, Y. Zhang, C. Heikes, D.G. Schlom, R. Wu, and X.Q. Pan, “Dislocation-Assisted Quasi-Two-Dimensional Semiconducting Nanochannels Embedded in Perovskite Thin Films,” Nano Letters 23 (2023) 5409−5416.
21. P. Ngabonziza, J. Park, W. Sigle, P.A. van Aken, J. Mannhart, and D.G. Schlom, “Employing High-Temperature-Grown SrZrO₃ Buffer to Enhance the Electron Mobility in La:BaSnO₃-based Heterostructures,” Applied Physics Letters 122 (2023) 241902-1 – 241902-7.
22. T.J. Smart, F.V.E. Hensling, D.Y. Kim, L.N. Majer, Y.E. Suyolcu, D. Dereh, D.G. Schlom, D. Jena, J. Mannhart, and W. Braun, “Why Thermal Laser Epitaxy Aluminum Sources Yield Reproducible Fluxes in Oxidizing Environments,” Journal of Vacuum Science and Technology A 41 (2023) 042701-1 – 042701-6.
23. J. Junquera, Y. Nahas, S. Prokhorenko, L. Bellaiche, J. Iñiguez, D.G. Schlom, L.Q. Chen, S. Salahuddin, D.A. Muller, L.W. Martin, and R. Ramesh, “Topological Phases in Polar Oxide Nanostructures,” Reviews of Modern Physics 95 (2023) 025001-1 – 025001-69.

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24. K. Azizie, F.V.E. Hensling, C.A. Gorsak, Y. Kim, N.A. Pieczulewski, D.M. Dryden, M.K.I. Senevirathna, S. Coye, S-L. Shang, J. Steele, P. Vogt, N.A. Parker, Y.A. Birkhölzer, J.P. McCandless, D. Jena, H.G. Xing, Z.K. Liu, M.D. Williams, A.J. Green, K. Chabak, D.A. Muller, A.T. Neal, S. Mou, M.O. Thompson, H.P. Nair, and D.G. Schlom, “Silicon-Doped β-Ga₂O₃ Films Grown at 1 μm/h by Suboxide Molecular-Beam Epitaxy,” APL Materials 11 (2023) 041102-1 – 041102-12.

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25. Y. Hu, D.G. Schlom, S. Datta, and K. Cho, “Ilmenite and Amorphous SnTiO₃ as p-Type Oxide Semiconductors,” Journal of Materials Chemistry C 11 (2023) 4830–4836.
26. J.P. Clancy, H. Gretarsson, A. Lupascu, J.A. Sears, Z. Nie, M.H. Upton, J. Kim, Z. Islam, M. Uchida, D.G. Schlom, K.M. Shen, and Y-J. Kim, “Magnetic Excitations in the Square-Lattice Iridate Ba₂IrO₄,” Physical Review B 107 (2023) 054423-1 – 054423-6.

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27. L. Caretta, Y-T. Shao, J. Yu, A.B. Mei, B.F. Grosso, C. Dai, P. Behera, D. Lee, M. McCarter, E. Parsonnet, Harikrishnan K.P., F. Xue, X. Guo, E.S. Barnard, S. Ganschow, Z. Hong, A. Raja, L.W. Martin, L.Q. Chen, M. Feibig, K. Lai, N.A. Spaldin, D.A. Muller, D.G. Schlom, and R. Ramesh, “Non-Volatile Electric-Field Control of Inversion Symmetry,” Nature Materials 22 (2023) 207–215.
28. T. Schwaigert, S. Salmani-Rezaie, M.R. Barone, H. Paik, E. Ray, M.D. Williams, D.A. Muller, D.G. Schlom, and K. Ahadi, “Molecular Beam Epitaxy of KTaO₃,” Journal of Vacuum Science and Technology A 41 (2023) 022703-1 – 022703-6.

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29. 

    P. Abbasi, N. Shirato, R.E. Kumar, I.V. Albelo, M.R. Barone, D.N. Cakan, M. de la Paz Cruz-Jáuregui, S. Wieghold, D.G. Schlom, V. Rose, T.A. Pascal, and D.P. Fenning, “Nanoscale Surface Structure of Nanometer-Thick Ferroelectric BaTiO₃ Films Revealed by Synchrotron X-ray Scanning Tunneling Microscopy: Implications for Catalytic Adsorption Reactions,” ACS Applied Nano Materials 6 (2023) 2162−2170.
30. E.E. Fleck, M.R. Barone, H.P. Nair, N.J. Schreiber, N.M. Dawley, D.G. Schlom, B.H. Goodge, and L.F. Kourkoutis, “Atomic-Scale Mapping and Quantification of Local Ruddlesden-Popper Phase Variations,” Nano Letters 22 (2022) 10095−10101.
31. M.R. Barone, C. Du, L. Radosavljevic, D. Werder, X.Q. Pan, and D.G. Schlom, “Epitaxial Synthesis of a Vertically Aligned Two-Dimensional van der Waals Crystal: (110)-Oriented SnO,” Crystal Growth & Design 22 (2022) 7248–7254.
32. B.Z. Gregory, J. Strempfer, D. Weinstock, J.P. Ruf, Y. Sun, H. Nair, N.J. Schreiber, D.G. Schlom, K.M. Shen, and A. Singer, “Strain-Induced Orbital-Energy Shift in Antiferromagnetic RuO₂ revealed by Resonant Elastic X-ray Scattering,” Physical Review B 106 (2022) 195135–1 – 195135-7.

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33. 

    F.V.E. Hensling, M.A. Smeaton, V. Show, K. Azizie, M.R. Barone, L.F. Kourkoutis, and D.G. Schlom, “Epitaxial Growth of the First Two Members of the Ba_n+1In_nO_2.5n+1 Ruddlesden-Popper Homologous Series,” Journal of Vacuum Science and Technology A 40 (2022) 062707–1 – 062707-8.

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34. A. Luo, O.Y. Gorobtsov, J.N. Nelson, D-Y. Kuo, T. Zhou, Z. Shao, R. Bouck, M.J. Cherukara, M.V. Holt, K.M. Shen, D.G. Schlom, J. Suntivich, and A. Singer, “X-ray Nano-Imaging of Defects in Thin Film Catalysts via Cluster Analysis,” Applied Physics Letters 121 (2022) 153904–1 – 153904-7.

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35. Q. Song, J. Sun, C.T. Parzyck, L. Miao, Q. Xu, F.V.E. Hensling, M.R. Barone, C. Hu, J. Kim, B.D. Faeth, H. Paik, P.D.C. King, K.M. Shen, and D.G. Schlom, “Growth of PdCoO₂ Films with Controlled Termination by Molecular-Beam Epitaxy and Determination of their Electronic Structure by Angle-Resolved Photoemission Spectroscopy,” APL Materials 10 (2022) 091113-1 – 091113-9.

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36. M.R. Barone, M. Jeong, N. Parker, J. Sun, D.A. Tenne, K. Lee, and D.G. Schlom, “Synthesis of Metastable Ruddlesden-Popper Titanates, (ATiO₃)_nAO, with n ≥ 20 by Molecular-Beam Epitaxy,” APL Materials 10 (2022) 091106-1 – 091106-12.

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37. C.S. Chang, J. Sun, S. Khim, A.P. Mackenzie, D.G. Schlom, and D.A. Muller, “Visualization of Defects in Single-Crystal and Thin-Film PdCoO₂ using Aberration-Corrected Scanning Transmission Electron Microscopy,” Physical Review Materials 6 (2022) 093401-1 – 093401-7.

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38. M. Hepting, M. Bejas, A. Nag, H. Yamase, N. Coppola, D. Betto, C. Falter, M. Garcia-Fernandez, S. Agrestini, K.-J. Zhou, M. Minola, C. Sacco, L. Maritato, P. Orgiani, H.I. Wei, K.M. Shen, D.G. Schlom, A. Galdi, A. Greco, and B. Keimer, “Gapped Collective Charge Excitations and Interlayer Hopping in Cuprate Superconductors,” Physical Review Letters 129 (2022) 047001-1 – 047001-8.

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39. Y. Hu, D.G. Schlom, S. Datta, and K. Cho, “Interlayer Engineering of Band Gap and Hole Mobility in p‑Type Oxide SnO,” ACS Applied Materials & Interfaces 14 (2022) 25670−25679.
40. H.J. Lee, Y. Ahn, S.D. Marks, D.S. Gyan, E.C. Landahl, J.Y. Lee, T.Y. Kim, S. Unithrattil, S.H. Chun, S. Kim, S-Y. Park, I. Eom, C. Adamo, D.G. Schlom, H. Wen, S. Lee, J.Y. Jo, and P.G. Evans, “Subpicosecond Optical Stress Generation in Multiferroic BiFeO₃,” Nano Letters 22 (2022) 4294–4300.
41. P. Orgiani, A. Galdi, D.G. Schlom, and L. Maritato, “Normal-State Transport Properties of Infinite-Layer Sr_1–xLa_xCuO₂ Electron-Doped Cuprates in Optimal- and Over-Doped Regimes,” Nanomaterials 12 (2022) 1709-1 – 1709-10.

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42. A. Bose, N.J. Schreiber, R. Jain, D-F. Shao, H.P. Nair, J. Sun, X.S. Zhang, D.A. Muller, E.Y. Tsymbal, D.G. Schlom, and D.C. Ralph, “Tilted Spin Current Generated by the Collinear Antiferromagnet Ruthenium Dioxide,” Nature Electronics 5 (2022) 267–274.
43. 

    P. Abbasi, M.R. Barone, M. de la Paz Cruz-Jáuregui, D. Valdespino-Padilla, H. Paik, T. Kim, L. Kornblum, D.G. Schlom, T.A. Pascal, and D.P. Fenning, “Ferroelectric Modulation of Surface Electronic States in BaTiO₃ for Enhanced Hydrogen Evolution Activity,” Nano Letters 22 (2022) 4276–4284.
44. B.H. Goodge, H.P. Nair, D.J. Baek, N.J. Schreiber, L. Miao, J.P. Ruf, E.N. Waite, P.M. Carubia, K.M. Shen, D.G. Schlom, and L.F. Kourkoutis, “Disentangling Types of Lattice Disorder Impacting Superconductivity in Sr₂RuO₄ by Quantitative Local Probes,” APL Materials 10 (2022) 041114-1 – 041114-11.

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45. B.H. Goodge, I. El Baggari, S.S. Hong, Z. Wang, D.G. Schlom, H.Y. Hwang, and L.F. Kourkoutis, “Disentangling Coexisting Structural Order Through Phase Lock-In Analysis of Atomic-Resolution STEM Data,” Microscopy and Microanalysis 28 (2022) 404–411.
46. S.K. Chaluvadi, Z. Wang, L.M. Carvalho de Araújo, P. Orgiani, V. Polewczyk, G. Vinai, O. Rousseau, V. Pierron, A. Pautrat, B. Domengès, D.G. Schlom, and L. Méchin, “Integration of Epitaxial La_2/3Sr_1/3MnO₃ Thin Films on Silicon-on-Sapphire Substrate for MEMS Applications,” Applied Surface Science 579 (2022) 152095-1 – 152095-6.

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47. J. Sun, C.T. Parzyck, J.H. Lee, C.M. Brooks, L.F. Kourkoutis, X. Ke, R. Misra, J. Schubert, F.V. Hensling, M.R. Barone, Z. Wang, M.E. Holtz, N.J. Schreiber, Q. Song, H. Paik, T. Heeg, D.A. Muller, K.M. Shen, and D.G. Schlom, “Canonical Approach to Cation Flux Calibration in Oxide Molecular-Beam Epitaxy,” Physical Review Materials 6 (2022) 033802-1 – 033802-14.

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48. C. Sacco, A. Galdi, F. Romeo, N. Coppola, P. Orgiani, H.I. Wei, K.M. Shen, D.G. Schlom, and L. Maritato, “Comparing Thickness and Doping-Induced Effects on the Normal States of Infinite-Layer Electron-Doped Cuprates: Is There Anything to Learn?,” Nanomaterials 12 (2022) 1092-1 – 1092-8.

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49. C.T. Parzyck, A. Galdi, J.K. Nangoi, W.J.I. DeBenedetti, J. Balajka, B.D. Faeth, H. Paik, C. Hu, T.A. Arias, M.A. Hines, D.G. Schlom, K.M. Shen, and J.M. Maxson, “Single-Crystal Alkali Antimonide Photocathodes: High Efficiency in the Ultrathin Limit,” Physical Review Letters 128 (2022) 114801-1 – 114801-8.

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50. C. Guguschev, C. Richter, M. Brützam, K. Dadzis, C. Hirschle, T.M. Gesing, M. Schulze, A. Kwasniewski, J. Schreuer, and D.G. Schlom, “Revisiting the Growth of Large (Mg,Zr):SrGa₁₂O₁₉ Single Crystals: Core Formation and Its Impact on Structural Homogeneity Revealed by Correlative X-Ray Imaging,” Crystal Growth & Design 22 (2022) 2557−2568. 
51. P. Vogt, F.V.E. Hensling, K. Azizie, J.P. McCandless, J. Park, K. DeLello, D.A. Muller, H.G. Xing, D. Jena, and D.G. Schlom, “Extending the Kinetic and Thermodynamic Limits of Molecular-Beam Epitaxy utilizing Suboxide Sources or Metal-Oxide-Catalyzed Epitaxy,” Physical Review Applied 17 (2022) 034021-1 – 034021-12.

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52. M. Barone, M. Foody, Y. Hu, J. Sun, B. Frye, S.S. Perera, B. Subedi, H. Paik, J. Hollin, M. Jeong, K. Lee, C.H. Winter, N.J. Podraza, K. Cho, A. Hock, and D.G. Schlom, “Growth of Ta₂SnO₆, A Candidate Wide-Band-Gap p-Type Oxide,” Journal of Physical Chemistry C 126 (2022) 3764−3775.
53. K. Eom, H. Paik, J. Seo, N. Campbell, E.Y. Tsymbal, S.H. Oh, M.S. Rzchowski, D.G. Schlom, and C.B. Eom, “Oxide Two-Dimensional Electron Gas with High Mobility at Room-Temperature,” Advanced Science 9 (2022) 2105652-1 – 2105652-8.
54. J.N. Nelson, N.J. Schreiber, A.B. Georgescu, B.H. Goodge, B.D. Faeth, C.T. Parzyck, C. Zeledon, L.F. Kourkoutis, A.J. Millis, A. Georges, D.G. Schlom, and K.M. Shen, “Interfacial Charge Transfer and Persistent Metallicity of Ultrathin SrIrO₃/SrRuO₃ Heterostructures,” Science Advances 8 (2022) eabj0481-1 – eabj0481-7.
55. J.A. Mundy, B.F. Grosso, C.A. Heikes, D.F. Segedin, Z. Wang, Y-T. Shao, C. Dai, B.H. Goodge, Q.N. Meier, C.T. Nelson, B. Prasad, F. Xue, S. Ganschow, D.A. Muller, L.F. Kourkoutis, L.Q. Chen, W.D. Ratcliff, N.A. Spaldin, R. Ramesh, and D.G. Schlom, “Liberating a Hidden Antiferroelectric Phase with Interfacial Electrostatic Engineering,” Science Advances 8 (2022) eabg5860-1 – eabg5860-11.
56. C.N. Singh, L.F.J. Piper, H. Paik, D.G. Schlom, and W-C. Lee, “Correlation-Induced Emergent Charge Order in Metallic Vanadium Dioxide,” Physical Review B 105 (2022) 035150-1 – 035150-6.

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57. R. Held, J.A. Mundy, M.E. Holtz, D. Hodash, T. Mairoser, D.A. Muller, and D.G. Schlom, “Fabrication of Chemically and Structurally Abrupt Eu_1–xLa_xO/SrO/Si Interfaces and their Analysis by STEM-EELS,” Physical Review Materials 5 (2021) 124419.

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58. J. Zhang, K. McNicholas, S. Balaz, Z.Q. Zeng, D. Schlom, and L.J. Brillson, “Deep Level Defect Spectroscopies of Complex Oxide Surfaces and Interfaces,” Journal of Vacuum Science and Technology A 39 (2021) 063215-1 – 063215-12.

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59. A. Brewer, S. Lindemann, B. Wang, W. Maeng, J. Frederick, F. Li, Y. Choi, P.J. Thompson, J. W. Kim, T. Mooney, V. Vaithyanathan, D.G. Schlom, M.S. Rzchowski, L.Q. Chen, P.J. Ryan, and C.B. Eom, “Microscopic Piezoelectric Behavior of Clamped and Membrane (001) PMN-30PT Thin Films,” Applied Physics Letters 119 (2021) 202903-1 – 202903-7.

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60. H. Huyan, C. Addiego, X. Yan, C.A. Gadre, A. Melville, D.G. Schlom, and X.Q. Pan, “Direct Observation of Polarization-Induced Two-Dimensional Hole/Electron Gases at Ferroelectric-Insulator Interface,” npj Quantum Materials 6 (2021) 88-1 – 88-6.

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61. T.D. Frazer, Y. Zhu, Z. Cai, D.A. Walko, C. Adamo, D.G. Schlom, E.E. Fullerton, P.G. Evans, S.O. Hruszkewycz, Y. Cao, and H. Wen, “Optical Transient Grating Pumped X-ray Diffraction Microscopy for Studying Mesoscale Structural Dynamics,” Scientific Reports (2021) 193221 – 193221 -8.
62. D. Barbalas, S. Chatterjee, D.G. Schlom, K.M. Shen, and N.P. Armitage, “THz Electrodynamics of Mixed-Valence YbAl₃ and LuAl₃ Thin Films,” European Physical Journal B 94 (2021) 186-1 – 186-8.
63. D. Bugallo, E. Langenberg, E. Ferreiro-Vila, E.H. Smith, C. Stefani, X. Batlle, G. Catalan, N. Domingo, D.G. Schlom, and F. Rivadulla, “Deconvolution of Phonon Scattering by Ferroelectric Domain Walls and Point Defects in a PbTiO₃ Thin Film Deposited in a Composition-Spread Geometry,” ACS Applied Materials & Interfaces 13 (2021) 45679−45685.
64. L.M. Garten, Z. Jiang, H. Paik, J.D. Perkins, A. Kakekhani, R. Fei, D.J. Werder, M.E. Holtz, D.S. Ginley, A.M. Rappe, D.G. Schlom, and M.L. Staruch, “Stromataxic Stabilization of a Metastable Layered ScFeO₃ Polymorph,” Chemistry of Materials 33 (2021) 7423−7431.
65. C. Stefani, E. Langenberg, K. Cordero-Edwards, D.G. Schlom, G. Catalan, and N. Domingo, “Mechanical Reading of Ferroelectric Polarization,” Journal of Applied Physics 130 (2021) 074103-1 – 074103-8.

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66. J.P. McCandless, C.S. Chang, K. Nomoto, J. Casamento, V. Protasenko, P. Vogt, D. Rowe, K. Gann, S.T. Ho, W. Li, R. Jinno, Y. Cho, A.J. Green, K.D. Chabak, D.G. Schlom, M.O. Thompson, D.A. Muller, H.G. Xing, and D. Jena, “Thermal Stability of Epitaxial a-Ga₂O₃ and (Al,Ga)₂O₃ Layers on m-Plane Sapphire,” Applied Physics Letters 119 (2021) 062102-1 – 062102-7.
67. Y. Fang, H.P. Nair, L. Miao, B. Goodge, N.J. Schreiber, J.P. Ruf, L.F. Kourkoutis, K.M. Shen, D.G. Schlom, and B.J. Ramshaw, “Quantum Oscillations and Quasiparticle Properties of Thin Film Sr₂RuO₄,” Physical Review B 104 (2021) 045152-1 – 045152-7.

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68. S. Dutta, A. Khanna, A.S. Assoa, H. Paik, D.G. Schlom, Z. Toroczkai, A. Raychowdhury, and S. Datta, “An Ising Hamiltonian Solver based on Coupled Stochastic Phase-Transition Nano-Oscillators,” Nature Electronics 4 (2021) 502–512.
69. B.D. Faeth, S. Xie, S. Yang, J.K. Kawasaki, J.N. Nelson, S. Zhang, C. Parzyck, P. Mishra, C. Li, C. Jozwiak, A. Bostwick, E. Rotenberg, D.G. Schlom, and K.M. Shen, “Interfacial Electron-Phonon Coupling Constants Extracted from Intrinsic Replica Bands in Monolayer FeSe/SrTiO₃,” Physical Review Letters 127 (2021) 016803-1 – 016803-6.

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70. H. Kim, K. Lu, Y. Liu, H.S. Kum, K.S. Kim, K. Qiao, S-H. Bae, S. Lee, Y. J. Ji, K.H. Kim, H. Paik, S. Xie, H. Shin, C. Choi, J.H. Lee, C. Dong, J.A. Robinson, J-H. Lee, J-H. Ahn, G.Y. Yeom, D.G. Schlom, and J. Kim, “Impact of 2D−3D Heterointerface on Remote Epitaxial Interaction through Graphene,” ACS Nano 15 (2021) 10587–10596.
71. B.D. Faeth, S.-L. Yang, J.K. Kawasaki, J.N. Nelson, P. Mishra, C.T. Parzyck, C. Li, D.G. Schlom, and K.M. Shen, “Incoherent Cooper Pairing and Pseudogap Behavior in Single-Layer FeSe/SrTiO₃,” Physical Review X 11 (2021) 021054-1 – 021054-11.

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72. W.R. Mondal, E. Evlyukhin, S.A. Howard, G.J. Paez, H. Paik, D.G. Schlom, L.F.J. Piper, and W-C. Lee, “Role of V-V Dimers on Structural, Electronic, Magnetic, and Vibrational Properties of VO₂ by First-Principles Simulations and Raman Spectroscopic Analysis,” Physical Review B 103 (2021) 214107-1 – 214107-13.

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73. Y. Yang, R. Zeng, H. Paik, D-Y. Kuo, D.G. Schlom, F.J. DiSalvo, D.A. Muller, J. Suntivich, and H.D. Abruña, “Epitaxial Thin-Film Spinel Oxides as Oxygen Reduction Electrocatalysts in Alkaline Media,” Chemistry of Materials 33 (2021) 4006–4013.
74. Z. Chen, Y. Jiang, Y-T. Shao, M.E. Holtz, M. Odstrčil, M. Guizar-Sicairos, I. Hanke, S. Ganschow, D.G. Schlom, and D.A. Muller, “Electron Ptychography Achieves Atomic-Resolution Limits set by Lattice Vibrations,” Science 372 (2021) 826–831.
75. R.S. Winkler, Y. Zhang, Q. Zhang, Z. Wang, Y. Zhu, M-G. Han, D.G. Schlom, and N. Valanoor, “Electromechanical Manipulation of Topological Defects to Yield Giant Piezoelectric Response in Epitaxial Lead Zirconate Titanate Bilayers on Silicon,” Advanced Electronic Materials 7 (2021) 2100195-1 – 2100195-10.
76. P.B. Meisenheimer, R.A. Steinhardt, S.H. Sung, L.D. Williams, S. Zhuang, M.E. Nowakowski, S. Novakov, M.M. Torunbalci, B. Prasad, C.J. Zollner, Z. Wang, N.M. Dawley, J. Schubert, A.H. Hunter, S. Manipatruni, D.E. Nikonov, I.A. Young, L.Q. Chen, J. Bokor, S.A. Bhave, R. Ramesh, J.-M. Hu, E. Kioupakis, R. Hovden, D.G. Schlom, and J.T. Heron, “Engineering New Limits to Magnetostriction through Metastability in Iron-Gallium Alloys,” Nature Communications 12 (2021) 2757-1 – 2757-8.

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77. F.V.E. Hensling, D. Dahliah, P. Dulal, P. Singleton, J. Sun, J. Schubert, H. Paik, I. Subedi, B. Subedi, G-M. Rignanese, N.J. Podraza, G. Hautier, and D.G. Schlom, “Epitaxial Stannate Pyrochlore Thin Films: Limitations of Cation Stoichiometry and Electron Doping,” APL Materials 9 (2021) 051113-1 – 051113-13.
78. Y. Wang, H.P. Nair, N.J. Schreiber, J.P. Ruf, B. Cheng, D.G. Schlom, K.M. Shen, and N.P. Armitage, “Separated Transport Relaxation Scales and Interband Scatting in Thin Films of SrRuO₃, CaRuO₃, and Sr₂RuO₄,” Physical Review B 103 (2021) 205109-1 – 205109-14.

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79. M.E. Holtz , E.S. Padgett , R. Steinhardt , C.M. Brooks, D. Meier, D.G. Schlom, D.A. Muller, and J.A. Mundy, “Dimensionality-Induced Change in Topological Order in Multiferroic Oxide Superlattices,” Physical Review Letters 126 (2021) 157601-1 – 157601-7.

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80. R.A. Steinhardt, C.M. Brooks, G.C. Correa, M.E. Holtz, R. Ramesh, D.A. Muller, J.A. Mundy, and D.G. Schlom, “DyFe₂O₄: A New Trigonal Rare-Earth Ferrite Grown by Molecular-Beam Epitaxy,” APL Materials 9 (2021) 041106-1 – 041106-7.
81. S.A. Howard, E. Evlyukhin, G. Páez Fajardo, H. Paik, D.G. Schlom, and L.F.J. Piper, “Digital Tuning of the Transition Temperature of Epitaxial VO₂ Thin Films on MgF₂ Substrates by Strain Engineering,” Advanced Materials Interfaces 8 (2021) 2001790-1 – 2001790-6.
82. N.M. Dawley, E.K. Pek, C-H. Lee, E.J. Ragasa, X. Xiong, K. Lee, S.R. Phillpot, A.V. Chernatynskiy, D.G. Cahill, and D.G. Schlom, “Thermal Conductivity of the n = 1 – 5 and 10 Members of the (SrTiO₃)_nSrO Ruddlesden-Popper Superlattices,” Applied Physics Letters 118 (2021) 091904-1 – 091904-6.

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83. P. Vogt, F.V.E. Hensling, K. Azizie, C.S. Chang, D. Turner, J. Park, J.P. McCandless, H. Paik, B.J. Bocklund, G. Hoffman, O. Bierwagen, D. Jena, H.G. Xing, S. Mou, D.A. Muller, S-L. Shang, Z.K. Liu, and D.G. Schlom, “Adsorption-Controlled Growth of Ga₂O₃ by Suboxide Molecular-Beam Epitaxy,” APL Materials 9 (2021) 031101-1 – 031101-13.

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84. X. Zheng, E. Gerber, J. Park, D. Werder, O. Kigner, E.-A. Kim, S. Xie, and D.G. Schlom, “Utilizing Complex Oxide Substrates to Control Carrier Concentration in Large-Area Monolayer MoS₂ Films,” Applied Physics Letters 118 (2021) 093103-1 – 093103-6.

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85. G.J. Páez Fajardo, S.A. Howard, E. Evlyukhin, M.J. Wahila, W. Raja Mondal, M. Zuba, J.E. Boschker, H. Paik, D.G. Schlom, J.T. Sadowski, S.A. Tenney, B. Reinhart, W-C. Lee, and L.F.J. Piper, “Structural Phase Transitions of NbO₂: Bulk versus Surface,” Chemistry of Materials 33 (2021) 1416–1425.
86. V.M. Nascimento, L. Méchin, S. Liu, A. Aryan, C. Adamo, D.G. Schlom, and B. Guillet, “Electro-Thermal and Optical Characterization of an Uncooled Suspended Bolometer based on an Epitaxial La_0.7Sr_0.3MnO₃ Film Grown on CaTiO₃/Si,” Journal of Physics D:  Applied Physics 54 (2021) 055301-1 – 055301-7.

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87. Z. Zhang, S.-L. Hsu, V.A. Stoica, H. Paik, E. Parsonnet, A. Qualls J. Wang, L. Xie, M. Kumari, S. Das, Z. Leng, M. McBriarty, R. Proksch, A. Gruverman, D.G. Schlom, L.Q. Chen, S. Salahuddin, L.W. Martin, and R. Ramesh, “Epitaxial Ferroelectric Hf_0.5Zr_0.5O₂ with Metallic Pyrochlore Oxide Electrodes,” Advanced Materials 33 (2021) 2006089-1 – 2006089-10.
88. M.R. Barone, N.M. Dawley, H.P. Nair, B.H. Goodge, M.E. Holtz, A. Soukiassian, E.E. Fleck, K. Lee, Y. Jia, T. Heeg, R. Gatt, Y. Nie, D.A. Muller, L.F. Kourkoutis, and D.G. Schlom, “Improved Control of Atomic Layering in Perovskite-Related Homologous Series,” APL Materials 9 (2021) 021118-1 – 021118-10.
89. Y.E. Suyolcu, J. Sun, B.H. Goodge, J. Park, J. Schubert, L.F. Kourkoutis, and D.G. Schlom, “a-Axis YBa₂Cu₃O_7–x/PrBa₂Cu₃O_7–x/YBa₂Cu₃O_7–x Trilayers with Subnanometer rms Roughness,” APL Materials 9 (2021) 021117-1 – 021117-8.
90. Y. Hu, X. Yao, D.G. Schlom, S. Datta, and K.J. Cho, “First Principles Design of High Hole Mobility p-type Sn–O–X Ternary Oxides: Valence Orbital Engineering of Sn²⁺ in Sn²⁺–O–X by Selection of Appropriate Elements X,” Chemistry of Materials 33(2021) 212–225.
91. R. Jinno, C.S. Chang, T. Onuma, Y. Cho, S-T. Ho, D. Rowe, M.C. Cao, K. Lee, V. Protasenko, D.G. Schlom, D.A. Muller, H.G. Xing, and D. Jena, “Crystal Orientation Dictated Epitaxy of Ultrawide-Bandgap 5.4- to 8.6-eV α-(AlGa)₂O₃ on m-Plane Sapphire,” Science Advances 7 (2021) eabd5891-1 – eabd5891-8.
92. G. Wan, J.W. Freeland, J. Kloppenburg, G. Petretto, J.N. Nelson, D-Y. Kuo, C-J. Sun, J. Wen, J.T. Diulus, G.S. Herman, Y. Dong, R. Kou, J. Sun, S. Chen, K.M. Shen, D.G. Schlom, G-M. Rignanese, G. Hautier, D.D. Fong, Z. Feng, H. Zhou, and J. Suntivich, “Amorphization Mechanism of SrIrO₃ Electrocatalyst: How Oxygen Redox Initiates Ionic Diffusion and Structural Reorganization,” Science Advances 7 (2021) eabc7323-1 – eabc7323-9.
93. X. Yan, C. Liu, C.A. Gadre, L. Gu, T. Aoki, T.C. Lovejoy, N. Dellby, O.L. Krivanek, D.G. Schlom, R. Wu, and X.Q. Pan, “Single-Defect Phonons Imaged by Electron Microscopy,” Nature 589 (2021) 65–69.
94. J.P. Ruf, H. Paik, N.J. Schreiber, H.P. Nair, L. Miao, J.K. Kawasaki, J.N. Nelson, B.D. Faeth, Y. Lee, B.H. Goodge, B. Pamuk, C.J. Fennie, L.F. Kourkoutis, D.G. Schlom, and K.M. Shen, “Strain-Stabilized Superconductivity,” Nature Communications 12 (2021) 59-1 – 59-8.

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95. A. Bose, J.N. Nelson, X.S. Zhang, P. Jadaun, R. Jain, D.G. Schlom, D.C. Ralph, D.A. Muller, K.M. Shen, and R.A. Buhrman, “Effects of Anisotropic Strain on Spin-Orbit Torque Produced by the Dirac Nodal-Line Semimetal IrO₂,” ACS Applied Materials & Interfaces 12 (2020) 55411−55416.
96. Y. Wang, G. Bossé, H.P. Nair, N.J. Schreiber, J.P. Ruf, B. Cheng, C. Adamo, D.E. Shai, Y. Lubashevsky, D.G. Schlom, K.M. Shen, and N.P. Armitage, “Subterahertz Momentum Drag and Violation of Matthiessen’s Rule in an Ultraclean Ferromagnetic SrRuO₃ Metallic Thin Film,” Physical Review Letters 125 (2020) 217401-1 – 217401-6.

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97. S. Fan, H. Das, A.F. Rébola, K.A. Smith, J.A. Mundy, C. Brooks, M.E. Holtz, D.A. Muller, C.J. Fennie, R. Ramesh, D.G. Schlom, S. McGill, and J.L. Musfeldt, “Site-Specific Spectroscopic Measurement of Spin and Charge in (LuFeO₃)_m/(LuFe₂O₄)₁ Multiferroic Superlattices,” Nature Communications 11 (2020) 5582-1 – 5582-9.

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98. 

    A. Bhargava, R. Eppstein, J. Sun, M.A. Smeaton, H. Paik, L.F. Kourkoutis, D.G. Schlom, M.C. Toroker, and R.D. Robinson, “Breakdown of the Small-Polaron Hopping Model in Higher-Order Spinels,” Advanced Materials 32 (2020) 2004490-1 – 2004490-12.
99. R. Held, T. Mairoser, A. Melville, J.A. Mundy, M.E. Holtz, D. Hodash, Z. Wang, J.T. Heron, S.T. Dacek, B. Holländer, D.A. Muller, and D.G. Schlom, “Exploring the Intrinsic Limit of the Charge-Carrier-Induced Increase of the Curie Temperature of Lu- and La-doped EuO Thin Films,” Physical Review Materials 4 (2020) 104412-1 – 104412-8.

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100. G. Kim, K. Son, Y.E. Suyolcu, L. Miao, N.J. Schreiber, H.P. Nair, D. Putzky, M. Minola, G. Christiani, P.A. van Aken, K.M. Shen, D.G. Schlom, G. Logvenov, and B. Keimer, “Inhomogeneous Ferromagnetism Mimics Signatures of the Topological Hall Effect in SrRuO₃ Films,” Physical Review Materials 4 (2020) 104410-1 – 104410-8.

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101. V. Goian, R. Held, E. Bousquet, Y. Yuan, A. Melville, H. Zhou, V. Gopalan, P. Ghosez, N.A. Spaldin, D.G. Schlom, and S. Kamba, “Making EuO Multiferroic by Epitaxial Strain Engineering,” Communications Materials 1 (2020) 74.

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102. C. Stefani, L. Ponet, K. Shapovalov, P. Chen, E. Langenberg, D.G. Schlom, S. Artyurhin, M. Stengel, N. Domingo, and G. Catalan, “Mechanical Softness of Ferroelectric 180° Domain Walls,” Physical Review X 10 (2020) 041001-1 – 041001-12.

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103. E. Evlyukhin, S.A. Howard, H. Paik, G.J. Paez, D.J. Gosztola, C.N. Singh, D.G. Schlom, W-C. Lee, and L.F.J. Piper, “Directly Measuring the Structural Transition Pathways of Strain-Engineered VO₂ Thin Films,” Nanoscale 12 (2020) 18857–18863.
104. 

     K.M. Adkison, S-L. Shang, B.J. Bocklund, D. Klimm, D.G. Schlom, and Z.K. Liu, “Suitability of Binary Oxides for Molecular-Beam Epitaxy Source Materials: A Comprehensive Thermodynamic Analysis,” APL Materials 8 (2020) 081110-1 – 081110-18.

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105. N.M. Dawley, B.H. Goodge, W. Egger, M.R. Barone, L.F. Kourkoutis, D.J. Keeble, and D.G. Schlom, “Defect Accommodation in Off-Stoichiometric (SrTiO₃)_nSrO Ruddlesden‑Popper Superlattices studied with Positron Annihilation Spectroscopy,” Applied Physics Letters 117 (2020) 062901-1 – 062901-5.

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106. L. Miao, N.J. Schreiber, H.P. Nair, B.H. Goodge, S. Jiang, J.P. Ruf, Y. Lee, M. Fu, B. Tsang, Y. Li, C. Zeledon, J. Shan, K.F. Mak, L.F. Kourkoutis, D.G. Schlom, and K.M. Shen, “Strain Relaxation Induced Transverse Resistivity Anomalies in SrRuO₃ Thin Films,” Physical Review B 102 (2020) 064406-1 – 064406-6.

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107. Y. Ma, A. Edgeton, H. Paik, B.D. Faeth, C.T. Parzyck, B. Pamuk, S-L. Shang, Z.K. Liu, K.M. Shen, D.G. Schlom, and C.B. Eom, “Realization of Epitaxial Thin Films of the Topological Crystalline Insulator Sr₃SnO,” Advanced Materials 32 (2020) 2000809-1 – 2000809-6.
108. X. Li, J. Casamento, P. Dang, Z. Zhang, O. Afuye, A.B. Mei, A.B. Apsel, D.G. Schlom, D. Jena, D.C. Ralph, and H.G. Xing, “Spin-Orbit Torque Field-Effect Transistor (SOTFET): Proposal for a Magnetoelectric Memory,” Applied Physics Letters 116 (2020) 242405-1 – 242405-5.

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109. E. Padgett, M.E. Holtz, P. Cueva, Y-T. Shao, E. Langenberg, D.G. Schlom, and D.A. Muller, “The Exit-Wave Power-Cepstrum Transform for Scanning Nanobeam Electron Diffraction: Robust Strain Mapping at Subnanometer Resolution and Subpicometer Precision,” Ultramicroscopy 214 (2020) 112994-1 – 112994-14.
110. 

     A.B. Mei, I. Gray, Y. Tang, J. Schubert, D. Werder, J. Bartell, D.C. Ralph, G.D. Fuchs, and D.G. Schlom, “Local Photothermal Control of Phase Transitions for On-Demand Room-Temperature Rewritable Magnetic Patterning,” Advanced Materials 32 (2020) 2001080-1 – 2001080-6.
111. P.J. Ryan, G.E. Sterbinsky, Y. Choi, J.C. Woicik, L. Zhu, J.S. Jiang, J-H. Lee, D.G. Schlom, T. Birol, S.D. Brown, P.B.J. Thompson, P.S. Normile, J. Lang, and J.-W. Kim, “Multiferroic Behavior in EuTiO₃ Films Constrained by Symmetry,” Physical Review B 101 (2020) 180409-1 – 180409-6.

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112. J.N. Nelson, C.T. Parzyck, B.D. Faeth, J.K. Kawasaki, D.G. Schlom, and K.M. Shen, “Mott Gap Collapse in Lightly Hole-Doped Sr_2–xK_xIrO₄,” Nature Communications 11 (2020) 2597-1 – 2597-6.

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113. J. Wu, H.P. Nair, A.T. Bollinger, X. He, I. Robinson, N.J. Schreiber, K.M. Shen, D.G. Schlom, and I. Božović, “Electronic Nematicity in Sr₂RuO₄,” Proceedings of the National Academy of Sciences of the United States of America 117 (2020) 10654–10659.

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114. G.J. Paez, C.N. Singh, M.J. Wahila, K.E. Tirpak, N.F. Quackenbush, S. Sallis, H. Paik, Y. Liang, D.G. Schlom, T-L. Lee, C. Schlueter, W-C. Lee, and L.F.J. Piper, “Simultaneous Structural and Electronic Transitions in Epitaxial VO₂/TiO₂(001),”Physical Review Letters 124 (2020) 196402-1 – 196402-6.

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115. E. Langenberg, H. Paik, E.H. Smith, H.P. Nair, I. Hanke, S. Ganschow, G. Catalan, N. Domingo, and D.G. Schlom, “Strain-Engineered Ferroelastic Structures in PbTiO₃ Films and Their Control by Electric Fields,” ACS Applied Materials & Interfaces12 (2020) 20691−20703.
116. P. Barrozo, D.R. Småbråten, Y-L. Tang, B. Prasad, S. Saremi, R. Ozgur, V. Thakare, R.A. Steinhardt, M.E. Holtz, V.A. Stoica, L.W. Martin, D.G. Schlom, S.M. Selbach, and R. Ramesh, “Defect-Enhanced Polarization Switching in the Improper Ferroelectric LuFeO₃,” Advanced Materials 32 (2020) 2000508-1 – 2000508-8.
117. C. Guguschev, D. Klimm, M. Brützam, T.M. Gesing, M. Gogolin, H. Paik, T. Markurt, D.J. Kok, A. Kwasniewski, U. Jendritzki, and D.G. Schlom, “Czochralski Growth and Characterization of Perovskite-type (La,Nd)(Lu,Sc)O₃ Single Crystals with a Pseudocubic Lattice Parameter of about 4.09 Å,” Journal of Crystal Growth 536 (2020) 125526-1 – 125526-10.
118. J.L. MacManus-Driscoll, M.P. Wells, C. Yun, J-W. Lee, C.B. Eom, and D.G. Schlom, “New Approaches for Achieving more Perfect Transition Metal Oxide Thin Films,” APL Materials 8 (2020) 040904-1 – 040904-13.

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119. J. Casamento, M.E. Holtz, H. Paik, P. Dang, R. Steinhardt, H.G. Xing, D.G. Schlom, and D. Jena, “Multiferroic LuFeO₃ on GaN by Molecular-Beam Epitaxy,” Applied Physics Letters 116 (2020) 102901-1 – 102901-4.

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120. D. Du, P.J. Strohbeen, H. Paik, C. Zhang, K. Genser, K.M. Rabe, P.M. Voyles, D.G. Schlom, and J.K. Kawasaki, “Control of Polymorphism during Epitaxial Growth of Hyperferroelectric Candidate LiZnSb on GaSb (111)B,” Journal of Vacuum Science and Technology B 38 (2020) 022208-1 – 022208-6.

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121. B. Hu, D-Y. Kuo, H. Paik, D.G. Schlom, and J. Suntivich, “Enthalpy and Entropy of Oxygen Electroadsorption on RuO₂(110) in Alkaline Media,” Journal of Chemical Physics 152 (2020) 094704.
122. H.S. Kum, H. Lee, S. Kim, S. Lindemann, W. Kong, K. Qiao, P. Chen, J. Irwin, J.H. Lee, S. Xie, S. Subramanian, J. Shim, S-H. Bae, C. Choi, L. Ranno, S. Seo, S. Lee, J. Bauer, H. Li, K. Lee, J.A. Robinson, C.A. Ross, D.G. Schlom, M.S. Rzchowski, C.B. Eom, and J. Kim, “Heterogeneous Integration of Single-Crystalline Complex-Oxide Membranes,” Nature 578 (2020) 75–81.
123. N. Wolff, T. Schwaigert, D. Siche, D.G. Schlom, and D. Klimm, “Growth of CuFeO₂ Single Crystals by the Optical Floating-Zone Technique,” Journal of Crystal Growth 532 (2020) 125426-1 – 125426-5.
124. N.M. Dawley, E.J. Marksz, A.M. Hagerstrom, G.H. Olsen, M.E. Holtz, V. Goian, C. Kadlec, J. Zhang, X. Lu, J.A. Drisko, R. Uecker, S. Ganschow, C.J. Long, J.C. Booth, S. Kamba, C.J. Fennie, D.A. Muller, N.D. Orloff, and D.G. Schlom, “Targeted Chemical Pressure Yields Tunable Millimetre-Wave Dielectric,” Nature Materials 19 (2020) 176–181.
125. J. Park, H. Paik, K. Nomoto, K. Lee, B-E. Park, B. Grisafe, L-C. Wang, S. Salahuddin, S. Datta, Y. Kim, D. Jena, H.G. Xing, and D.G. Schlom, “Fully Transparent Field-Effect Transistor with High Drain Current and On-Off Ratio,” APL Materials 8 (2020) 011110-1 – 011110-6.

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126. B. Guzelturk, A.B. Mei, L. Zhang, L.Z. Tan, P. Donahue, A.G. Singh, D.G. Schlom, L.W. Martin, and A.M. Lindenberg, “Light-Induced Currents at Domain Walls in Multiferroic BiFeO₃,” Nano Letters 20 (2020) 145–151.
127. J. Sun, M.R. Barone, C.S. Chang, M.E. Holtz, H. Paik, J. Schubert, D.A. Muller, and D.G. Schlom, “Growth of PdCoO₂ by Ozone-Assisted Molecular-Beam Epitaxy,” APL Materials 7 (2019) 121112-1 – 121112-7.

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128. P. Dang, Z. Zhang, J. Casamento, X. Li, J. Singhal, D.G. Schlom, D.C. Ralph, H.G. Xing, and D. Jena, “Materials Relevant to Realizing a Field-Effect Transistor Based on Spin-Orbit Torques,” IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 5 (2019) 158–165.
129. H.J. Lee, Y. Ahn, S.D. Marks, E.C. Landahl, J.Y. Lee, T.Y. Kim, S. Unithrattil, J.Y. Jo, S.H. Chun, S. Kim, S-Y. Park, I. Eom, C. Adamo, D.G. Schlom, H. Wen, and P.G. Evans, “Non-Thermal Fluence Threshold for Femtosecond Pulsed X-Ray Radiation Damage in Perovskite Complex Oxide Epitaxial Heterostructures,” Applied Physics Letters 115 (2019) 252903-1 – 252903-5.

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130. Y. Hu, J. Hwang, Y. Lee, P. Conlin, D.G. Schlom, S. Datta, and K. Cho, “First Principles Calculations of Intrinsic Mobilities in Tin-Based Oxide Semiconductors SnO, SnO₂, and Ta₂SnO₆,” Journal of Applied Physics 126 (2019) 185701-1 – 185701-10.

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131. I. Gray, G.M. Stiehl, J.T. Heron, A.B. Mei, D.G. Schlom, R. Ramesh, D.C. Ralph, and G.D. Fuchs, “Imaging Uncompensated Moments and Exchange-Biased Emergent Ferromagnetism in FeRh Thin Films,” Physical Review Materials 3 (2019) 124407-1 – 124407-15.

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132. J. Irwin, S. Lindemann, W. Maeng, J.J. Wang, V. Vaithyanathan, J.M. Hu, L.Q. Chen, D.G. Schlom, C.B. Eom, and M.S. Rzchowski, “Magnetoelectric Coupling by Piezoelectric Tensor Design,” Scientific Reports 9 (2019) 19158-1 – 19158-9.

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133. C. Guguschev, D. Klimm, M. Brützam, T.M. Gesing. M. Gogolin, H. Paik, A. Dittmar, V.J. Fratello, and D.G. Schlom, “Single Crystal Growth and Characterization of Ba₂ScNbO₆—A Novel Substrate for BaSnO₃ Films,”Journal of Crystal Growth 528 (2019) 125263-1 – 125263-6.
134. W. Gao, C. Addiego, H. Wang, X. Yan, Y. Hou, D. Ji, C. Heikes, Y. Zhang, L. Li, H. Huyan, T. Blum, T. Aoki, Y. Nie, D.G. Schlom, R. Wu, and X.Q. Pan, “Real-Space Charge-Density Imaging with Sub-Ångström Resolution by Four-Dimensional Electron Microscopy,” Nature 575 (2019) 480–484.
135. C. Sacco, A. Galdi, P. Orgiani, N. Coppola, H.I. Wei, R. Arpaia, S. Charpentier, F. Lombardi, B. Goodge, L.F. Kourkoutis, K.M. Shen, D.G. Schlom, L. Maritato, “Low Temperature Hidden Fermi-Liquid Charge Transport in Under Doped La_xSr_1-xCuO₂ Infinite Layer Electron-Doped Thin Films,” Journal of Physics: Condensed Matter 31 (2019) 445601-1 – 445601-7.

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136. A.B. Mei, S. Saremi, L. Miao, M. Barone, Y. Tang, C. Zeledon, J. Schubert, D.C. Ralph, L.W. Martin, and D.G. Schlom, “Ferroelectric Properties of Ion-irradiated Bismuth Ferrite Layers Grown via Molecular-beam Epitaxy,” APL Materials 7 (2019) 111101-1 – 111101-6.

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137. I. Gray, T. Moriyama, N. Sivadas, G.M. Stiehl, J.T. Heron, R. Need, B.J. Kirby, D.H. Low, K.C. Nowack, D.G. Schlom, D.C. Ralph, T. Ono, and G.D. Fuchs, “Spin Seebeck Imaging of Spin-Torque Switching in Antiferromagnetic Pt/NiO Heterostructures,” Physical Review X 9 (2019) 041016-1 – 041016-10.

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138. A.B. Mei, L. Miao, M.J. Wahila, G. Khalsa, Z. Wang, M. Barone, N.J. Schreiber, L.E. Noskin, H. Paik, T.E. Tiwald, Q. Zheng, R.T. Haasch, D.G. Sangiovanni, L.F.J. Piper, and D.G. Schlom, “Adsorption-Controlled Growth and Properties of Epitaxial SnO Films,” Physical Review Materials 3 (2019) 105202-1 – 105202-6.

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139. E. Langenberg, D. Saha, M.E. Holtz, J-J. Wang, D. Bugallo, E. Ferreiro-Vila, H. Paik, I. Hanke, S. Ganschow, D.A. Muller, L-Q. Chen, G. Catalan, N. Domingo, J. Malen, D.G. Schlom, and F. Rivadulla, “Ferroelectric Domain Walls in PbTiO₃ are Effective Regulators of Heat Flow at Room Temperature,” Nano Letters 19 (2019) 7901–7907.
140. L. Li, X. Cheng, T. Blum, H. Huyan, Y. Zhang, C. Heikes, X. Yan, C. Gadre, T. Aoki, M. Xu, L. Xie, Z. Hong, C. Adamo, D.G. Schlom, L.Q. Chen, and X.Q. Pan, “Observation of Strong Polarization Enhancement in Ferroelectric Tunnel Junctions,” Nano Letters 19 (2019) 6812–6818.
141. G. Kim, Y.E. Suyolcu, J. Herrero-Martin, D. Putzky, H.P. Nair, J.P. Ruf, N.J. Schreiber, C. Dietl, G. Christiani, G. Logvenov, M. Minola, P.A. van Aken, K.M. Shen, D.G. Schlom, and B. Keimer, “Electronic and Vibrational Signatures of Ruthenium Vacancies in Sr₂RuO₄ Thin Films,” Physical Review Materials 3 (2019) 094802-1 – 094802-7.

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142. D. Klimm, C. Guguschev, S. Ganschow, M. Bickermann, and D.G. Schlom, “REScO₃ Substrates—Purveyors of Strain Engineering,” Crystal Research and Technology 2019 (2019) 1900111-1 – 1900111-5.
143. Y. Zhang, H. Lu, X. Yan, X. Cheng, L. Xie, T. Aoki, L. Li, C. Heikes, S.P. Lau, D.G. Schlom, L.Q. Chen, A. Gruverman, and X.Q. Pan, “Intrinsic Conductance of Domain Walls in BiFeO₃,” Advanced Materials 31(2019) 1902099-1 – 1902099-7.
144. Z. Wang, B.H. Goodge, D.J. Baek, M.J. Zachman, X. Huang, X. Bai, C.M. Brooks, H. Paik, A.B. Mei, J.D. Brock, J.P. Maria, L.F. Kourkoutis, and D.G. Schlom, “Epitaxial SrTiO₃ Film on Silicon with Narrow Rocking Curve Despite Huge Defect Density,” Physical Review Materials 3 (2019) 073403-1 – 073403-10.

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145. M. Coll, J. Fontcuberta, M. Althammer, M. Bibes, H. Boschker, A. Calleja, G. Cheng, M. Cuoco, R. Dittmann, B. Dkhil, I. El Baggari, M. Fanciulli, I. Fina, E. Fortunato, C. Frontera, S. Fujita, V. Garcia, S.T.B. Goennenwein, C.G. Granqvist, J. Grollier, R. Gross, A. Hagfeldt, G. Herranz, K. Hono, E. Houwman, M. Huijben, A. Kalaboukhov, D.J. Keeble, G. Koster, L.F. Kourkoutis, J. Levy, M. Lira-Cantu, J.L. MacManus-Driscoll, J. Mannhart, R. Martins, S. Menzel, T. Mikolajick, M. Napari, M.D. Nguyen, G. Niklasson, C. Paillard, S. Panigrahi, G. Rijnders, F. Sánchez, P. Sanchis, S. Sanna, D.G. Schlom, U. Schroeder, K.M. Shen, A. Siemon, M. Spreitzer, H. Sukegawa, R. Tamayo, J. van den Brink, N. Pryds, and F.M. Granozio, “Towards Oxide Electronics: a Roadmap,” Applied Surface Science 482 (2019) 1–93.
146. A.B. Mei, Y. Tang, J. Schubert, D. Jena, H.G. Xing, D.C. Ralph, and D.G. Schlom, “Self-Assembly and Properties of Domain Walls in BiFeO₃ Layers Grown via Molecular-Beam Epitaxy,” APL Materials 7 (2019) 071101-1 – 071101-5.

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147. A. Galdi, C.M. Pierce, L. Cultrera, G. Adhikari, W.A. Schroeder, H. Paik, D.G. Schlom, J.K. Nangoi, T.A. Arias, E. Lochocki, C. Parzyck, K.M. Shen, J.M. Maxson, and I.V. Bazarov, “Low Energy Photoemission from (100) Ba_1–xLa_xSnO₃Thin Films for Photocathode Applications,” The European Physical Journal Special Topics 228 (2019) 713–718.
148. J.N. Nelson, J.P. Ruf, Y. Lee, C. Zeledon, J.K. Kawasaki, S. Moser, C. Jozwiak, E. Rotenberg, A. Bostwick, D.G. Schlom, K.M. Shen, and L. Moreschini, “Dirac Nodal Lines Protected Against Spin-Orbit Interaction in IrO₂,” Physical Review Materials 3 (2019) 064205-1 – 064205-7.

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149. S. Liu, B. Guillet, C. Adamo, V.M. Nascimento, S. Lebargy, G. Brasse, F. Lemarié, J. El Fallah, D.G. Schlom, and L. Méchin, “Free-Standing La_0.7Sr_0.3MnO₃ Suspended Micro-Bridges on Buffered Silicon Substrates Showing Undegraded Low Frequency Noise Properties,” Journal of Micromechanics and Microengineering 29 (2019) 065008-1 – 065008-9.
150. Y. Ou, Z. Wang, C.S. Chang, H.P. Nair, H. Paik, N. Reynolds, D.C. Ralph, D.A. Muller, D.G. Schlom, and R.A. Buhrman, “Exceptionally High, Strongly Temperature Dependent, Spin Hall Conductivity of SrRuO₃,” Nano Letters 19 (2019) 3663–3670.
151. S. Das, Y.L. Tang, Z. Hong, M.A.P. Gonçalves, M.R. McCarter, C. Klewe, K.X. Nguyen, F. Gómez-Ortiz, P. Shafer, E. Arenholz, V.A. Stoica, S.-L. Hsu, B. Wang, C. Ophus, J.F. Liu, C.T. Nelson, S. Saremi, B. Prasad, A.B. Mei, D.G. Schlom, J. Íñiguez, P. García-Fernández, D.A. Muller, L.Q. Chen, J. Junquera, L.W. Martin, and R. Ramesh, “Observation of Room-Temperature Polar Skyrmions,” Nature 568 (2019) 368–372.
152. J.J. de Pablo, N.E. Jackson, M.A. Webb, L.Q. Chen, J.E. Moore, D. Morgan, R. Jacobs, T. Pollock, D.G. Schlom, E.S. Toberer, J. Analytis, I. Dabo, D.M. DeLongchamp, G.A. Fiete, G.M. Grason, G. Hautier, Y. Mo, K. Rajan, E.J. Reed, E. Rodriguez, V. Stevanovic, J. Suntivich, K. Thornton, and J-C. Zhao, “New Frontiers for the Materials Genome Initiative,” npj Computational Materials 5 (2019) 41-1 – 41-23.

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153. 

     R. Ramesh and D.G. Schlom, “Creating Emergent Phenomena in Oxide Superlattices,” Nature Reviews Materials 4 (2019) 257–268.
154. W-C. Lee, M.J. Wahila, S. Mukherjee, C.N. Singh, T. Eustance, A. Regoutz, H. Paik, J.E. Boschker, F. Rodolakis, T-L. Lee, D.G. Schlom, and L.F.J. Piper, “Cooperative Effects of Strain and Electron Correlation in Epitaxial VO₂ and NbO₂,” Journal of Applied Physics 125 (2019) 082539-1 – 082539-10.

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155. H. Boschker, T. Harada, T. Asaba, R. Ashoori, A.V. Boris, H. Hilgenkamp, C.R. Hughes, M.E. Holtz, L. Li, D.A. Muller, H. Nair, P. Reith, X.R. Wang, D.G. Schlom, A. Soukiassian, J. Mannhart, “Ferromagnetism and Conductivity in Atomically Thin SrRuO₃,” Physical Review X 9 (2019) 011027-1 – 011027-13.

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156. C. Sacco, A. Galdi, F. Romeo, N. Coppola, P. Orgiani, H.I. Wei, B.H. Goodge, L.F. Kourkoutis, K.M. Shen, D.G. Schlom, and L. Maritato, “Carrier Confinement Effects Observed in the Normal-State Electrical Transport of Electron-Doped Cuprate Trilayers,” Journal of Physics D:  Applied Physics 52 (2019) 135303-1 – 135303-9.

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157. Z. Wang, H. Paik, Z. Chen, D.A. Muller, and D.G. Schlom, “Epitaxial Integration of High-Mobility La-doped BaSnO₃ Thin Films with Silicon,” APL Materials 7 (2019) 022520-1 – 022520-7.

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158. D-Y. Kuo, H. Paik, J.N. Nelson, K.M. Shen, D.G. Schlom, and J. Suntivich, “Chlorine Evolution Reaction Electrocatalysis on RuO₂(110) and IrO₂(110) grown using Molecular-Beam Epitaxy,” Journal of Chemical Physics 150 (2019) 041726-1 – 041726-6.
159. D-Y. Kuo, H. Paik, J. Kloppenburg, B. Faeth, K.M. Shen, D.G. Schlom, G. Hautier, and J. Suntivich, “Measurements of Oxygen Electroadsorption Energies and Oxygen Evolution Reaction on RuO₂(110): A Discussion of the Sabatier Principle and its Role in Electrocatalysis,” Journal of the American Chemical Society 140 (2018) 17597–17605.
160. Y. Zhang, H. Lu, L. Xie, X. Yan, T.R. Paudel, J. Kim, X. Cheng, H. Wang, C. Heikes, L. Li, M. Xu, D.G. Schlom, L.Q. Chen, R. Wu, E.Y. Tsymbal, A. Gruverman, and X.Q. Pan, “Anisotropic Polarization-Induced Conductance at a Ferroelectric-Insulator Interface,” Nature NanoTechnology 13 (2018) 1132–1136.
161. Y. Yuan, Y. Lu, G. Stone, K. Wang, C.M. Brooks, D.G. Schlom, S.B. Sinnott, H. Zhou, and V. Gopalan, “Three-Dimensional Atomic Scale Electron Density Reconstruction of Octahedral Tilt Epitaxy in Functional Perovskites,” Nature Communications 9 (2018) 5220-1 – 5220-11.

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162. H.P. Nair, J.P. Ruf, N.J. Schreiber, L. Miao, M.L. Grandon, D.J. Baek, B.H. Goodge, J.P.C. Ruff, L.F. Kourkoutis, K.M. Shen, and D.G. Schlom, “Demystifying the Growth of Superconducting Sr₂RuO₄ Thin Films,” APL Materials 6 (2018) 101108-1 – 101108-6.

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163. J.K. Kawasaki, C.H. Kim, J.N. Nelson, S. Crisp, C.J. Zollner, E. Bigenwald, J.T. Heron, C.J. Fennie, D.G. Schlom, and K.M. Shen, “Engineering Carrier Effective Masses in Ultrathin Quantum Wells of IrO₂,” Physical Review Letters 121 (2018) 176802-1 – 176802-6.

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164. A.E. Bruchhausen, N.D. Lanzillotti-Kimura, B. Jusserand, A. Soukiassian, L. Xie, X.Q. Pan, T. Dekorsy, D.G. Schlom, and A. Fainstein, “Acoustic Confinement Phenomena in Oxide Multifunctional Nanophononic Devices,” Physical Review Materials 2 (2018) 106002-1 – 106002-12.

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165. C.J. Eom, D-Y. Kuo, C. Adamo, E.J. Moon, S.J. May, E.J. Crumlin, D.G. Schlom, and J. Suntivich, “Tailoring Manganese Oxide with Atomic Precision to Increase Surface Site Availability for Oxygen Reduction Catalysis,” Nature Communications 9 (2018) 4034-1 – 4034-7.

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166. L. Li, J.R. Jokisaari, Y. Zhang, X. Cheng, X. Yan, C. Heikes, Q. Lin, C. Gadre, D.G. Schlom, L.Q. Chen, and X.Q. Pan, “Control of Domain Structures in Multiferroic Thin Films through Defect Engineering,” Advanced Materials 30 (2018) 1802737-1 – 1802737-7.
167. A.B. Mei, Y. Tang, J.L. Grab, J. Schubert, D.C. Ralph, and D.G. Schlom, “Structural, Magnetic, and Transport Properties of Fe_1–xRh_x/MgO(001) Films grown by Molecular-Beam Epitaxy,” Applied Physics Letters 113 (2018) 082403-1 – 082403-4.

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168. Z. Wang, H.P. Nair, G.C. Correa, J. Jeong, K. Lee, E.S. Kim, A. Seidner H., C.S. Lee, H.J. Lim, D.A. Muller, and D.G. Schlom, “Epitaxial Integration and Properties of SrRuO₃ on Silicon,” APL Materials 6 (2018) 086101-1 – 086101-10.

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169. Y. Li, C. Adamo, C.E. Rowland, R.D. Schaller, D.G. Schlom, and D.A. Walko, “Nanoscale Excitonic Photovoltaic Mechanism in Ferroelectric BiFeO₃ Thin Films,” APL Materials 6 (2018) 084905-1 – 084905-8.

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170. A.M. Hagerstrom, X. Lu, N.M. Dawley, H.P. Nair, J. Mateu, R.D. Horansky, C.A.E. Little, J.C. Booth, C.J. Long, D.G. Schlom, and N.D. Orloff, “Sub-Nanosecond Tuning of Microwave Resonators Fabricated on Ruddlesden-Popper Dielectric Thin Films,” Advanced Materials Technologies 3 (2018) 1800090-1 – 1800090-6.
171. B.H. Savitzky, I. El Baggari, C.B. Clement, E. Waite, B.H. Goodge, D.J. Baek, J.P. Sheckelton, C. Pasco, H. Nair, N.J. Schreiber, J. Hoffman, A.S. Admasu, J. Kim, S-W. Cheong, A. Bhattacharya, D.G. Schlom, T.M. McQueen, R. Hovden, and L.F. Kourkoutis, “Image Registration of Low Signal-to-Noise Cryo-STEM Data,” Ultramicroscopy 191 (2018) 56–65.
172. H.Y. Sun, Z.W. Mao, T.W. Zhang, L. Han, T.T. Zhang, X.B. Cai, X. Guo, Y.F. Li, Y.P. Zang, W. Guo, J.H. Song, D.X. Ji, C.Y. Gu, C. Tang, Z.B. Gu, N. Wang, Y. Zhu, D.G. Schlom, Y.F. Nie, and X.Q. Pan, “Chemically Specific Termination Control of Oxide Interfaces via Layer-by-Layer Mean Inner Potential Engineering,” Nature Communications 9 (2018) 2965-1 – 2965-8.

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173. Y. Liu, H.P. Nair, J.P. Ruf, D.G. Schlom, and K.M. Shen, “Revealing the Hidden Heavy Fermi Liquid in CaRuO₃,” Physical Review B 98 (2018) 041110-1 – 041110-5.

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174. E. Turgut, H. Paik, K. Nguyen, D.A. Muller, D.G. Schlom, and G.D. Fuchs, “Engineering Dzyaloshinskii-Moriya Interaction in B20 Thin-Film Chiral Magnets,” Physical Review Materials 2 (2018) 074404.

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175. J.K. Kawasaki, D. Baek, H. Paik, H.P. Nair, L.F. Kourkoutis, D.G. Schlom, and K.M. Shen, “Rutile IrO₂/TiO₂Superlattices:  A Hyperconnected Analog to the Ruddelsden-Popper Structure,” Physical Review Materials 2 (2018) 054206-1 – 054206-7.

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176. E.B. Lochocki, H. Paik, M. Uchida, D.G. Schlom, and K.M. Shen, “Controlling Surface Carrier Density by Illumination in the Transparent Conductor La-doped BaSnO₃,” Applied Physics Letters 112 (2018) 181603-1 – 181603-5.

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177. D.T. Harris, N. Campbell, R. Uecker, M. Brützam, D.G. Schlom, A. Levchenko, M.S. Rzchowski, and C.B. Eom, “Superconductivity-Localization Interplay and Fluctuation Magnetoresistance in Epitaxial BaPb_1–xBi_xO₃ Thin Films,” Physical Review Materials 2 (2018) 041801-1 – 041801-7.

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178. H.P. Nair, Y. Liu, J.P. Ruf, N.J. Schreiber, S-L. Shang, D.J. Baek, B.H. Goodge, L.F. Kourkoutis, Z.K. Liu, K.M. Shen, and D.G. Schlom, “Synthesis Science of SrRuO₃ and CaRuO₃ Epitaxial Films with High Residual Resistivity Ratios,” APL Materials 6 (2018) 046101-1 – 046101-11.

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179. L. Li, X. Cheng, J.R. Jokisaari, P. Gao, J. Britson, C. Adamo, C. Heikes, D.G. Schlom, L.Q. Chen, and X.Q. Pan, “Defect-Induced Hedgehog Polarization States in Multiferroics,” Physical Review Letters 120 (2018) 137602-1 – 137602-6.

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180. A. Galdi, P. Orgiani, C. Sacco, B. Gobaut, P. Torelli, C. Aruta, N.B. Brookes, M. Minola, J.W. Harter, K.M. Shen, D.G. Schlom, and L. Maritato, “X-ray Absorption Spectroscopy Study of Annealing Process on Sr_1–xLa_xCuO₂ Electron-Doped Cuprate Thin Films,” Journal of Applied Physics 123 (2018) 123901-1 – 123901-7.  

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181. D-Y. Kuo, C.J. Eom, J.K. Kawasaki, G. Petretto, J.N. Nelson, G. Hautier, E.J. Crumlin, K.M. Shen, D.G. Schlom, and J. Suntivich, “Influence of Strain on the Surface-Oxygen Interaction and the Oxygen Evolution Reaction of SrIrO₃,”Journal of Physical Chemistry C 122 (2018)4359−4364.
182. Z. Wang, Z. Chen, A.B. Mei, X. Bai, L.F. Kourkoutis, D.A. Muller, and D.G. Schlom, “Growth of LaAlO₃ on Silicon via an Ultrathin SrTiO₃ Buffer Layer by Molecular-Beam Epitaxy,” Journal of Vacuum Science and Technology A 36 (2018) 021507-1 – 021507-7.

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183. R.H. Wakabayashi, H. Paik, M.J. Murphy, D.G. Schlom, M. Brützam, R. Uecker, R.B. van Dover, F.J. DiSalvo, and H.D. Abruña, “Rotating Disk Electrode Voltammetry of Thin Films of Novel Oxide Materials,” Journal of The Electrochemical Society 164 (2017) H1154–H1160.

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184. H. Paik, Z. Chen, E. Lochocki, A. Seidner H., A. Verma, N. Tanen, J. Park, M. Uchida, S.L. Shang, B-C. Zhou, M. Brützam, R. Uecker, Z.K. Liu, D. Jena, K.M. Shen, D.A. Muller, and D.G. Schlom, “Adsorption-Controlled Growth of La-doped BaSnO₃ by Molecular-Beam Epitaxy,” APL Materials 5 (2017) 116107-1 – 116107-11.

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185. J.D. Clarkson, I. Fina, Z.Q. Liu, Y. Lee, J. Kim, C. Frontera, K. Cordero, S. Wisotzki, F. Sanchez, J. Sort, S.L. Hsu, C. Ko, L. Aballe, M. Foerster, J. Wu, H.M. Christen, J.T. Heron, D.G. Schlom, S. Salahuddin, N. Kioussis, J. Fontcuberta, X. Marti, and R. Ramesh, “Hidden Magnetic States Emergent under Electric Field, in a Room Temperature Composite Magnetoelectric Multiferroic,” Scientific Reports 7 (2017) 15460-1 – 15460-7.

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186. S. Chatterjee, J.P. Ruf, H.I. Wei, K.D. Finkelstein, D.G. Schlom, and K.M. Shen, “Lifshitz Transition from Valence Fluctuations in YbAl₃,” Nature Communications 8 (2017) 852-1 – 852-6.

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187. D. Li, A.A. Sharma, N. Shukla, H. Paik, J.M Goodwill, S. Datta, D.G Schlom, J.A Bain, and M. Skowronski, “ON-State Evolution in Lateral and Vertical VO₂ Threshold Switching Devices,” Nanotechnology 28 (2017) 405201-1 – 405201-8.
188. C.G. Bischak, R.B. Wai, C. Cherqui, J.A. Busche, S.C. Quillin, C.L. Hetherington, Z. Wang, C.D. Aiello, D.G. Schlom, S. Aloni, D.F. Ogletree, D.J. Masiello, and N.S. Ginsberg, “Noninvasive Cathodoluminescence-Activated Nanoimaging of Dynamic Processes in Liquids,” ACS Nano 11 (2017) 10583-10590.
189. E.H. Smith, P.D.C. King, A. Soukiassian, D.G. Ast, and D.G. Schlom, “Hybrid Reflections from Multiple X-Ray Scattering in Epitaxial Oxide Films,” Applied Physics Letters 111 (2017) 131903-1 – 131903-5.

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190. G. Dellea, M. Minola, A. Galdi, D. Di Castro, C. Aruta, N.B. Brookes, C.J. Jia, C. Mazzoli, M. Moretti Sala, B. Moritz, P. Orgiani, D.G. Schlom, A. Tebano, G. Balestrino, L. Braicovich, T.P. Deveraux, L. Maritato, and G. Ghiringhelli, “Spin and Charge Excitations in Artificial Hole- and Electron-Doped Infinite Layer Cuprate Superconductors,” Physical Review B 96 (2017) 115117-1 – 115117-8.

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191. D. Chen, C.T. Nelson, X. Zhu, C.R. Serrao, J.D. Clarkson, Z. Wang, Y. Gao, S-L. Hsu, L.R. Dedon, Z. Chen, D. Yi, H-J. Liu, D. Zeng, Y-H. Chu, J. Liu, D.G. Schlom, and R. Ramesh, “A Strain-Driven Antiferroelectric-to-Ferroelectric Phase Transition in La-Doped BiFeO₃ Thin Films on Si,” NanoLetters 17 (2017) 5823−5829.
192. L. Xie, L.Z. Li, C.A. Heikes, Y. Zhang, Z.J. Hong, P. Gao, C.T. Nelson, F. Xue, E. Kioupakis, L.Q. Chen, D.G. Schlom, P. Wang, and X.Q. Pan, “Giant Ferroelectric Polarization in Ultrathin Ferroelectrics via Boundary-Condition Engineering,” Advanced Materials 29 (2017) 1701475-1 – 1701475-7.

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193. N.F. Quackenbush, H. Paik, M.E. Holtz, M.J. Wahila, J.A. Moyer, S. Barthel, T.O. Wehling, D.A. Arena, J.C. Woicik, D.A. Muller, D.G. Schlom, and L.F.J. Piper, “Reducing Orbital Occupancy in VO₂ Suppresses Mott Physics while Peierls Distortions Persist,” Physical Review B 96 (2017) 081103-1 – 081103-5.

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194. 

     D. Klimm, C. Guguschev, D.J. Kok, M. Naumann, L. Ackermann, D. Rytz, M. Peltz, K. Dupré, M.D. Neumann, A. Kwasniewski, D.G. Schlom, and M. Bickermann, “Crystal Growth and Characterization of the Pyrochlore Tb₂Ti₂O₇,” CrystEngComm 19 (2017) 3908–3914.

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195. E.H. Smith, J.F. Ihlefeld, C.A. Heikes, H. Paik, Y. Nie, C. Adamo, T. Heeg, Z.K. Liu, and D.G. Schlom, “Exploiting Kinetics and Thermodynamics to Grow Phase-Pure Complex Oxides by Molecular-Beam Epitaxy under Continuous Codeposition,” Physical Review Materials 1 (2017) 023403-1 – 023403-8.

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196. M.D. Nguyen, E. Houwman, M. Dekkers, D.G. Schlom, and G. Rijnders, “Research Update: Enhancement of Figure of Merit for Energy-Harvesters based on Free-Standing Epitaxial Pb(Zr_0.52Ti_0.48)_0.99Nb_0.01O₃ Thin-Film Cantilevers,” APL Materials 5 (2017) 074201-1 – 074201-7.

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197. V. Železný, O. Caha, A. Soukiassian, D.G. Schlom, and X.X. Xi, “Temperature-Dependent Far-Infrared Reflectance of an Epitaxial (BaTiO₃)₈/(SrTiO₃)₄ Superlattice,” Physical Review B 95 (2017) 214110-1 – 214110-10.

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198. J.A. Mundy, J. Schaab, Y. Kumagai, A. Cano, M. Stengel, I.P. Krug, D.M. Gottlob, H. Doğanay, M.E. Holtz, R. Held, Z. Yan, E. Bourret, C.M. Schneider, D.G. Schlom, D.A. Muller, R. Ramesh, N.A. Spaldin, and D. Meier, “Functional Electronic Inversion Layers at Ferroelectric Domain Walls,” Nature Materials 16 (2017) 622–627.
199. W.J. Hardy, H. Ji, H. Paik, D.G. Schlom, and D. Natelson, “Mesoscopic Quantum Effects in a Bad Metal, Hydrogen-Doped Vanadium Dioxide,” Journal of Physics: Condensed Matter 29 (2017) 185601-1 – 185601-10.

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200. 

     K.T. Faber, T. Asefa, M. Backhaus-Ricoult, R. Brow, J.Y. Chan, S. Dillon, W.G. Fahrenholtz, M.W. Finnis, J.E. Garay, R.E. García, Y. Gogotsi, S.M. Haile, J. Halloran, J. Hu, L. Huang, S.D. Jacobsen, E. Lara-Curzio, J. LeBeau, W.E. Lee, C.G. Levi, I. Levin, J.A. Lewis, D.M. Lipkin, K. Lu, J. Luo, J.-P. Maria, L.W. Martin, S. Martin, G. Messing, A. Navrotsky, N.P. Padture, C. Randall, G.S. Rohrer, A. Rosenflanz, T.A. Schaedler, D.G. Schlom, A. Sehirlioglu, A.J. Stevenson, T. Tani, V. Tikare, S. Trolier-McKinstry, H. Wang, and B. Yildiz, “The Role of Ceramic and Glass Science Research in Meeting Societal Challenges: Report from an NSF-Sponsored Workshop,” Journal of the American Ceramic Society 100 (2017) 1777–1803.
201. W. Wang, J.A. Mundy, C.M. Brooks, J.A. Moyer, M.E. Holtz, D.A. Muller, D.G. Schlom, and W. Wu, “Visualizing Weak Ferromagnetic Domains in Multiferroic Hexagonal Ferrite Thin Film,” Physical Review B 95 (2017) 134443-1 – 134443-7.

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202. J.P. Ruf, P.D.C. King, V.B. Nascimento, D.G. Schlom, and K.M. Shen, “Surface Atomic Structure of Epitaxial LaNiO₃ Thin Films Studied by in situ LEED-I(V),” Physical Review B 95 (2017) 115418-1 – 115418-6.

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203. V.V. Laguta, S. Kamba, M. Maryško, B. Andrzejewski, M. Kachlík, K. Maca, J.H. Lee, and D.G. Schlom, “Magnetic Resonance Study of Bulk and Thin Film EuTiO₃,” Journal of Physics: Condensed Matter 29 (2017) 105401-1 – 105401-9.

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204. D-Y. Kuo, J.K. Kawasaki, J.N. Nelson, J. Kloppenburg, G. Hautier, K.M. Shen, D.G. Schlom, and J. Suntivich, “Influence of Surface Adsorption on the Oxygen Evolution Reaction on IrO₂(110),” Journal of the American Chemical Society 139 (2017) 3473–3479. 
205. M. Brahlek, L. Zhang, J. Lapano, H-T. Zhang, R. Engel-Herbert, N. Shukla, S. Datta, H. Paik, and D.G. Schlom, “Opportunities in Vanadium-Based Strongly Correlated Electron Systems,” MRS Communications 7 (2017) 27–52.

     Copyright © 2017 by Materials Research Society.

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206. Q. Lei, M. Golalikhani, B.A. Davidson, G. Liu, D.G. Schlom, Q. Qiao, Y. Zhu, R.U. Chandrasena, W. Yang, A.X. Gray, E. Arenholz, A.K. Farrar, D.A. Tenne, M. Hu, J. Guo, R.K. Singh, and X.X. Xi, “Constructing Oxide Interfaces and Heterostructures by Atomic Layer-by-Layer Laser Molecular Beam Epitaxy,” npj Quantum Materials 2 (2017) 10-1 – 10-7.

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207. N. Reynolds, P. Jadaun, J.T. Heron, C.L. Jermain, J. Gibbons, R. Collette, R.A. Buhrman, D.G. Schlom, and D.C. Ralph, “Spin Hall Torques Generated by Rare-Earth Thin Films,” Physical Review B 95 (2017) 064412-1 – 064412-12.

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208. S.M. Strutner, A. Garcia, S. Ula, C. Adamo, W.L. Richards, K. Wang, D.G. Schlom, and G.P. Carman, “Index of Refraction Changes under Magnetic Field Observed in La_0.66Sr_0.33MnO₃ Correlated to the Magnetorefractive Effect,” Optical Materials Express 7 (2017) 468–476.

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209. R. Uecker, R. Bertram, M. Brützam, Z. Galazka, T.M. Gesing, C. Guguschev, D. Klimm, M. Klupsch, A. Kwasniewski, and D.G. Schlom, “Large-Lattice-Parameter Perovskite Single-Crystal Substrates,” Journal of Crystal Growth 457 (2017) 137–142.
210. C.L. Jermain, H. Paik, S.V. Aradhya, R.A. Buhrman, D.G. Schlom, and D.C. Ralph, “Low-Damping Sub-10-nm Thin Films of Lutetium Iron Garnet Grown by Molecular-Beam Epitaxy,” Applied Physics Letters 109 (2016) 192408-1 – 192408-5.

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211. A. Barnes, H. Haneef, D.G. Schlom, and N.J. Podraza, “Optical Band Gap and Infrared Phonon Modes of (La_0.29Sr_0.71)(Al_0.65Ta_0.36)O₃ (LSAT) Single Crystal from Infrared to Ultraviolet Range Spectroscopic Ellipsometry,” Optical Materials Express 6 (2016) 3210–3216.
212. D.E. Shai, M.H. Fischer, A.J. Melville, E.J. Monkman, J.W. Harter, D.W. Shen, D.G. Schlom, M.J. Lawler, E.-A. Kim, and K.M. Shen, “Observation of Semilocalized Dispersive States in the Strongly Correlated Electron-Doped Ferromagnet Eu_1–xGd_xO,” Physical Review B 94 (2016) 195102-1 – 195102-5.

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213. H.I. Wei, C. Adamo, E.A. Nowadnick, E.B. Lochocki, S. Chatterjee, J.P. Ruf, M.R. Beasley, D.G. Schlom, and K.M. Shen, “Electron Doping of the Parent Cuprate La₂CuO₄ without Cation Substitution,” Physical Review Letters 117 (2016) 147002-1 – 147002-7.

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214. F. Xue, L. Li, J. Britson, Z. Hong, C.A. Heikes, C. Adamo, D.G. Schlom, X.Q. Pan, and L.Q. Chen, “Switching the Curl of Polarization Vectors by an Irrotational Electric Field,” Physical Review B 94 (2016) 100103-1 – 100103-5.

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215. J.A. Mundy, C.M. Brooks, M.E. Holtz, J.A. Moyer, H. Das, A.F. Rébola, J.T. Heron, J.D. Clarkson, S.M. Disseler, Z. Liu, A. Farhan, R. Held, R. Hovden, E. Padgett, Q. Mao, H. Paik, R. Misra, L.F. Kourkoutis, E. Arenholz, A. Scholl, J.A. Borchers, W.D. Ratcliff, R. Ramesh, C.J. Fennie, P. Schiffer, D.A. Muller, and D.G. Schlom, “Atomically Engineered Ferroic Layers Yield a Room-Temperature Magnetoelectric Multiferroic,” Nature 537 (2016) 523–527.
216. J.K. Kawasaki, M. Uchida, H. Paik, D.G. Schlom, and K.M. Shen, “Evolution of Electronic Correlations across the Rutile, Perovskite, and Ruddelsden-Popper Iridates with Octahedral Connectivity,” Physical Review B 94 (2016) 121104-1 – 121104-6.

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217. H-T. Zhang, L. Guo, G. Stone, L. Zhang, Y-X. Zheng, E. Freeman, D.W. Keefer, S. Chaudhuri, H. Paik, J.A. Moyer, M. Barth, D.G. Schlom, J.V. Badding, S. Datta, V. Gopalan, and R. Engel-Herbert, “Imprinting of Local Metallic States into VO₂ with Ultraviolet Light,” Advanced Functional Materials 26 (2016) 6612–6618.

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218. G. Stone, C. Ophus, T. Birol, J. Ciston, C-H. Lee, K. Wang, C.J. Fennie, D.G. Schlom, N. Alem, and V. Gopalan, “Atomic Scale Imaging of Competing Polar States in a Ruddlesden-Popper Layered Oxide,” Nature Communications 7 (2016) 12572-1 – 12572-6.

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219. L. Li, J. Britson, J.R. Jokisaari, Y. Zhang, C. Adamo, A. Melville, D.G. Schlom, L.Q. Chen, and X.Q. Pan, “Giant Resistive Switching via Control of Ferroelectric Charged Domain Walls,” Advanced Materials 28 (2016) 6574–6580.

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220. N.F. Quackenbush, H. Paik, M.J. Wahila, S. Sallis, M.E. Holtz, X. Huang, A. Ganose, B.J. Morgan, D.O. Scanlon, Y. Gu, F. Xue, L.Q. Chen, G.E. Sterbinsky, C. Schlueter, T.-L. Lee, J.C. Woicik, J.-H. Guo, J.D. Brock, D.A. Muller, D.A. Arena, D.G. Schlom, and L.F.J. Piper, “Stability of the M2 Phase of Vanadium Dioxide Induced by Coherent Epitaxial Strain,” Physical Review B 94 (2016) 085105-1 – 085105-6.

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221. S. Chatterjee, S.H. Sung, D.J. Baek, L.F. Kourkoutis, D.G. Schlom, and K.M. Shen, “Epitaxial Growth and Electronic Properties of Mixed Valence YbAl₃ Thin Films,” Journal of Applied Physics 120 (2016) 035105-1 – 035105-5.

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222. Y-T. Hsu, W. Cho, A.F. Rebola, B. Burganov, C. Adamo, K.M. Shen, D.G. Schlom, C.J. Fennie, and E-A. Kim, “Manipulating Superconductivity in Ruthenates through Fermi Surface Engineering,” Physical Review B 94 (2016) 045118-1 – 045118-7.

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223. M.J. Wahila, K.T. Butler, Z.W. Lebens-Higgins, C.H. Hendon, A.S. Nandur, R.E. Treharne, N.F. Quackenbush, S. Sallis, K. Mason, H. Paik, D.G. Schlom, J.C. Woicik, J. Guo, D.A. Arena, B.E. White Jr., G.W. Watson, A. Walsh, and L.F.J. Piper, “Lone-pair Stabilization in Transparent Amorphous Tin Oxides:  A Potential Route to p-Type Conduction Pathways,” Chemistry of Materials 28 (2016) 4706–4713.
224. M. Plaza, X. Huang, J.Y.P. Ko, M. Shen, B.H. Simpson, J. Rodríguez-López, N.L. Ritzert, K. Letchworth-Weaver, D. Gunceler, D.G. Schlom, T.A. Arias, J.D. Brock, and H.D. Abruña, “Structure of the Photo-Catalytically Active Surface of SrTiO₃,” Journal of the American Chemical Society 138 (2016) 7816–7819.
225. S. Mukherjee, N.F. Quackenbush, H. Paik, C. Schlueter, T.-L. Lee, D.G. Schlom, L.F.J. Piper, and W-C. Lee, “Tuning a Strain-Induced Orbital Selective Mott Transition in Epitaxial VO₂,” Physical Review B 93 (2016) 241110-1 – 241110-5.

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226. R. Tang, Y. Nie, J.K. Kawasaki, D-Y. Kuo, G. Petretto, G. Hautier, G-M. Rignanese, K.M. Shen, D.G. Schlom, and J. Suntivich, “Oxygen Evolution Reaction Electrocatalysis on SrIrO₃ Grown using Molecular Beam Epitaxy,” Journal of Materials Chemistry A 4 (2016) 6831–6836.
227. D. Li, A.A. Sharma, D.K. Gala, N. Shukla, H. Paik, S. Datta, D.G. Schlom, J.A. Bain, and M. Skowronski, “Joule Heating-Induced Metal-Insulator Transition in Epitaxial VO₂/TiO₂ Devices,” ACS Applied Materials & Interfaces 8 (2016) 12908–12914.
228. B. Burganov, C. Adamo, A. Mulder, M. Uchida, P.D.C. King, J.W. Harter, D.E. Shai, A.S. Gibbs, A.P. Mackenzie, R. Uecker, M. Bruetzam, M.R. Beasley, C.J. Fennie, D.G. Schlom, and K.M. Shen, “Strain Control of Fermiology and Many-Body Interactions in Two-Dimensional Ruthenates,” Physical Review Letters 116 (2016) 197003-1 – 197003-6.

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229. C. Barone, A. Galdi, C. Sacco, P. Orgiani, D.G. Schlom, S. Pagano, and L. Maritato, “Noise Spectroscopy Investigation of Interplay Between Quantum Interference Effects and Superconductivity in Infinite Layer Cuprates,” IEEE Transactions on Applied Superconductivity 26 (2016) 7201204-1 – 7201204-4.

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230. J.C. Frederick, T.H. Kim, W. Maeng, A.A. Brewer, J.P. Podkaminer, W. Saenrang, V. Vaithyanathan, F. Li, L.Q. Chen, D.G. Schlom, S. Trolier-McKinstry, M.S. Rzchowski, and C.B. Eom, “Visualization of Dielectric Constant-Electric Field-Temperature Phase Maps for Imprinted Relaxor Ferroelectric Thin Films,” Applied Physics Letters 108 (2016) 132902-1 – 132902-5.

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231. U.K. Bhaskar, N. Banerjee, A. Abdollahi, Z. Wang, D.G. Schlom, G. Rijnders, and G. Catalan, “A Flexoelectric Microelectromechanical System on Silicon,” Nature Nanotechnology 10 (2016) 263–266.
232. 

     M.W. Tate, P. Purohit, D. Chamberlain, K.X. Nguyen, R.M. Hovden, C.S. Chang, P. Deb, E. Turgut, J.T. Heron, D.G. Schlom, D.C. Ralph, G.D. Fuchs, K.S. Shanks, H.T. Philipp, D.A. Muller, and S.M. Gruner, “High Dynamic Range Pixel Array Detector for Scanning Transmission Electron Microscopy,” Microscopy and Microanalysis 22 (2016) 237–249.
233. Z. Lebens-Higgins, D.O. Scanlon, H. Paik, S. Sallis, Y. Nie, M. Uchida, N.F. Quackenbush, M.J. Wahila, G.E. Sterbinsky, D.A. Arena, J.C. Woicik, D.G. Schlom, and L.F.J. Piper, “Direct Observation of Electrostatically Driven Band Gap Renormalization in a Degenerate Perovskite Transparent Conducting Oxide,” Physical Review Letters 116 (2016) 027602-1 – 027602-5.

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234. W-I. Liang, C-Y. Peng, R. Huang, W-C. Kuo, Y-C. Huang, C. Adamo, Y-C. Chen, L. Chang, J-Y. Juang, D.G. Schlom, and Y-H. Chu, “Epitaxial Integration of a Nanoscale BiFeO₃ Phase Boundary with Silicon,” Nanoscale 8 (2016) 1322–1326.
235. J.R. Jokisaari, D. Bayerl, K. Zhang, L. Xie, Y. Nie, D.G. Schlom, E. Kioupakis, G.W. Graham, and X.Q. Pan, “Polarization-Dependent Raman Spectroscopy of Epitaxial TiO₂(B) Thin Films,” Chemistry of Materials 27 (2015) 7896−7902.
236. E.A. Nowadnick, J.P. Ruf, H. Park, P.D.C. King, D.G. Schlom, K.M. Shen, and A.J. Millis, “Quantifying Electronic Correlation Strength in a Complex Oxide:  A Combined DMFT and ARPES Study of LaNiO₃,” Physical Review B 92 (2015) 245109-1 – 245109-7.

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237. P. Orgiani, A. Galdi, C. Sacco, R. Arpaia, S. Charpentier, F. Lombardi, C. Barone, S. Pagano, D.G. Schlom, and L. Maritato, “The Role of Quantum Interference Effects in Normal-State Transport Properties of Electron-Doped Cuprates,” Journal of Superconductivity and Novel Magnetism 28 (2015) 3481–3486.
238. Y. Li, C. Adamo, P. Chen, P.G. Evans, S.M. Nakhmanson, W. Parker, C.E. Rowland, R.D. Schaller, D.G. Schlom, D.A. Walko, H. Wen, and Q. Zhang, “Giant Optical Enhancement of Strain Gradient in Ferroelectric BiFeO₃ Thin Films and its Physical Origin,” Scientific Reports 5 (2015) 16650-1 – 16650-7.
239. H. Paik, J.A. Moyer, T. Spila, J.W. Tashman, J.A. Mundy, E. Freeman, N. Shukla, J.M. Lapano, R. Engel-Herbert, W. Zander, J. Schubert, D.A. Muller, S. Datta, P. Schiffer, and D.G. Schlom, “Transport Properties of Ultra-Thin VO₂ Films on (001) TiO₂ Grown by Reactive Molecular-Beam Epitaxy,” Applied Physics Letters 107 (2015) 163101-1 – 163101-5.

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240. H. Wen, M. Sassi, Z. Luo, C. Adamo, D.G. Schlom, K.M. Rosso, and X. Zhang, “Capturing Ultrafast Photoinduced Local Structural Distortions of BiFeO₃,” Scientific Reports 5 (2015) 15098-1 – 15098-8.
241. H. Wen, M. Sassi, Z. Luo, C. Adamo, D.G. Schlom, K.M. Rosso, and X. Zhang, “Capturing Ultrafast Photoinduced Local Structural Distortions of BiFeO₃,” Scientific Reports 5 (2015) 15098-1 – 15098-8.
242. P.P. Wu, X.Q. Ma, Y.L. Li, C.B. Eom, D.G. Schlom, V. Gopalan, and L.Q. Chen, “Influence of Interfacial Coherency on Ferroelectric Switching of Superlattice BaTiO₃/SrTiO₃,” Applied Physics Letters 107 (2015) 122906-1 – 122906-8.

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243. D.G. Schlom and C.J. Fennie, “Ferroelectrics:  The Positives of Going Negative,” Nature Materials 14 (2015) 969–970.
244. A. Rubano, G. De Luca, J. Schubert, Z. Wang, S. Zhu, D.G. Schlom, L. Marrucci, and D. Paparo, “Polar Asymmetry of La_(1–d)Al_{(1+ d)}O₃/SrTiO₃ Heterostructrues Probed by Optical Second Harmonic Generation,” Applied Physics Letters 107 (2015) 101603-1 – 101603-4.

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245. Y.F. Nie, D. Di Sante, S. Chatterjee, P.D.C. King, M. Uchida, S. Ciuchi, D.G. Schlom, and K.M. Shen, “Formation and Observation of a Quasi-Two-Dimensional d_xy Electron Liquid in Epitaxially Stabilized Sr_2−xLa_xTiO₄ Thin Films,” Physical Review Letters 115 (2015) 096405-1 – 096405-6.

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246. J. Park, Q. Zhang, P. Chen, M.P. Cosgriff, J.A. Tilka, C. Adamo, D.G. Schlom, H. Wen, Y. Zhu, and P.G. Evans, “Spatially Confined Low-Power Optically Pumped Ultrafast Synchrotron X-ray Nanodiffraction,” Review of Scientific Instruments 86 (2015) 083904-1 – 083904-6.

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247. N.F. Quackenbush, H. Paik, J.C. Woicik, D.A. Arena, D.G. Schlom, and L.F.J. Piper, “X-ray Spectroscopy of Ultra-Thin Oxide/Oxide Heteroepitaxial Films: A Case Study of Single Nanometer VO₂/TiO₂,” Materials 8 (2015) 5452–5466.
248. N. Shukla, A.V. Thathachary, A. Agrawal, H. Paik, A. Aziz, D.G. Schlom, S.K. Gupta, R. Engel-Herbert, and S. Datta, “A Steep Slope Transistor based on Abrupt Electronic Phase Transition,” Nature Communications 6 (2015) 7812-1 – 7812-6.

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249. C.M. Brooks, R.B. Wilson, A. Schäfer, J.A. Mundy, M.E. Holtz, D.A. Muller, J. Schubert, D.G. Cahill, and D.G. Schlom, “Tuning Thermal Conductivity in Homoepitaxial SrTiO₃ Films via Defects,” Applied Physics Letters 107 (2015) 051902-1 – 051902-5. 

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250. J.W. Harter, L. Maritato, H.I. Wei, D.E. Shai, E.J. Monkman, Y. Nie, D.G. Schlom, and K.M. Shen, “Doping Evolution and Polar Surface Reconstruction of the Infinite-Layer Cuprate Sr_1‑xLa_xCuO₂,” Physical Review B 92 (2015) 035149-1 – 217602-8.

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251. T. Mairoser, J.A. Mundy, A. Melville, D. Hodash, P. Cueva, R. Held, A. Glavic, J. Schubert, D.A. Muller, D.G. Schlom, and A. Schmehl, “High-Quality EuO Thin Films the Easy Way via Topotactic Transformation,” Nature Communications 6 (2015) 7716.

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252. R. Guo, Z. Wang, S. Zeng, K. Han, L. Huang, D.G. Schlom, T. Venkatesan, Ariando, and J. Chen, “Functional Ferroelectric Tunnel Junctions on Silicon,” Scientific Reports 5 (2015) 12576-1 – 12576-7.
253. C. Adamo, L. Méchin, T. Heeg, M. Katz, S. Mercone, B. Guillet, S. Wu, J.-M. Routoure, J. Schubert, W. Zander, R. Misra, P. Schiffer, X.Q. Pan, and D.G. Schlom, “Enhanced Electrical and Magnetic Properties in La_0.7Sr_0.3MnO₃ Thin Films Deposited on CaTiO₃-buffered Silicon Substrates,” APL Materials 3 (2015) 062504-1 – 062504-10.

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254. D.G. Schlom, “Perspective:  Oxide Molecular-Beam Epitaxy Rocks!,” APL Materials 3 (2015) 062403-1 – 062403-5. 

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255. S.M. Disseler, J.A. Borchers, C.M. Brooks, J.A. Mundy, J.A. Moyer, D.A. Hillsberry, E.L. Thies, D.A. Tenne, J. Heron, M.E. Holtz, J.D. Clarkson, G.M. Stiehl, P. Schiffer, D.A. Muller, D.G. Schlom, and W.D. Ratcliff, “Magnetic Structure and Ordering of Multiferroic Hexagonal LuFeO₃,” Physical Review Letters 114 (2015) 217602-1 – 217602-6. 

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256. S. Skiadopoulou, V. Goian, C. Kadlec, F. Kadlec, X.F. Bai, I.C. Infante, B. Dkhil, C. Adamo, D.G. Schlom, and S. Kamba, “Spin and Lattice Excitations of a BiFeO₃ Thin Film and Ceramics,” Physical Review B 91 (2015) 174108-1 – 174108-8. 

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257. C.G. Bischak, C.L. Hetherington, Z. Wang, J.T. Precht, D.M. Kaz, D.G. Schlom, and N.S. Ginsberg, “Cathodoluminescence-Activated Nanoimaging: Noninvasive Near-Field Optical Microscopy in an Electron Microscope,” Nano Letters 15 (2015) 3383−3390.
258. C. Weiland, G.E. Sterbinsky, A.K. Rumaiz, C.S. Hellberg, J.C. Woicik, S. Zhu, and D.G. Schlom, “Stoichiometry Dependence of Potential Screening at La_(1–d)Al_(1+d)O₃/SrTiO₃ Interfaces,” Physical Review B 91 (2015) 165103-1 – 165103-9. 

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259. M. Matsubara, A. Schroer, A. Schmehl, A. Melville, C. Becher, M.T. Martinez, D.G. Schlom, J. Mannhart, J. Kroha, and M. Fiebig, “Ultrafast Optical Tuning of Ferromagnetism via the Carrier Density,” Nature Communications 6 (2015) 6724-1 – 6724-7.

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260. B.S. Holinsworth, D. Mazumdar, C.M. Brooks, J.A. Mundy, H. Das, J.G. Cherian, S.A. McGill, C.J. Fennie, D.G. Schlom, and J.L. Musfeldt, “Direct Band Gaps in Multiferroic h-LuFeO₃,” Applied Physics Letters 106 (2015) 082902-1 – 082902-5.

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261. Y.F. Nie, P.D.C. King, C.H. Kim, M. Uchida, H.I. Wei, B.D. Faeth, J.P. Ruf, J.P.C. Ruff, L. Xie, X.Q. Pan, C.J. Fennie, D.G. Schlom, and K.M. Shen, “Interplay of Spin-Orbit Interactions, Dimensionality, and Octahedral Rotations in Semimetallic SrIrO₃,” Physical Review Letters 114 (2015) 016401-1 – 016401-6.

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262. Y. Lee, Z.Q. Liu, J.T. Heron, J.D. Clarkson, J. Hong, C. Ko, M.D. Biegalski, U. Aschauer, S.L. Hsu, M.E. Nowakowski, J. Wu, H.M. Christen, S. Salahuddin, J.B. Bokor, N.A. Spaldin, D.G. Schlom, and R. Ramesh, “Large Resistivity Modulation in Mixed-Phase Metallic Systems,” Nature Communications 6 (2015) 5959-1 – 5959-7.

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263. J.T. Heron, J.L. Bosse, Q. He, Y. Gao, M. Trassin, L. Ye, J.D. Clarkson, C. Wang, J. Liu, S. Salahuddin, D.C. Ralph, D.G. Schlom, J. Íñiguez, B.D. Huey, and R. Ramesh, “Deterministic Switching of Ferromagnetism at Room Temperature using an Electric Field,” Nature 516 (2014) 370-373. 
264. L. Hong, P.P. Wu, Y.L. Li, V. Gopalan, C.B. Eom, D.G. Schlom, and L.Q. Chen, “Piezoelectric Enhancement of (PbTiO₃)_m/(BaTiO₃)_n Ferroelectric Superlattices through Domain Engineering,” Physical Review B 90 (2014) 174111-1 – 174111-6.

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265. V. Goian, S. Kamba, N. Orloff, T. Birol, C.H. Lee, D. Nuzhnyy, J.C. Booth, M. Bernhagen, R. Uecker, and D.G. Schlom, “Influence of the Central Mode and Soft Phonon on the Microwave Dielectric Loss near the Strain-Induced Ferroelectric Phase Transitions in Sr_n+1Ti_nO_3n+1,” Physical Review B 90 (2014) 174105-1 – 174105-10.

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266. M. Huefner, R.K. Ghosh, E. Freeman, N. Shukla, H. Paik, D.G. Schlom, and S. Datta, “Hubbard Gap Modulation in Vanadium Dioxide Nanoscale Tunnel Junctions,” Nano Letters 14 (2014) 6115-6120.
267. V. Železny, A. Soukiassian, X.X. Xi, and D.G. Schlom, “Infrared Spectroscopy of Strained BaTiO₃/SrTiO₃ Superlattices on Scandate Substrates,” Phase Transitions 87 (2014) 929-937.
268. M. Uchida, Y.F. Nie, P.D.C. King, C.H. Kim, C.J. Fennie, D.G. Schlom, and K.M. Shen, “Correlated versus Conventional Insulating behavior in the J_eff = 1/2 vs. 3/2 Bands in the Layered Iridate Ba₂IrO₄,” Physical Review B 90 (2014) 075142-1 – 075142-6.

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269. Y.F. Nie, Y. Zhu, C.-H. Lee, L.F. Kourkoutis, J.A. Mundy, J. Junquera, P. Ghosez, D.J. Baek, S. Sung, X.X. Xi, K.M. Shen, D.A. Muller, and D.G. Schlom, “Atomically Precise Interfaces from Non-Stoichiometric Deposition,” Nature Communications 5 (2014) 4530-1 – 4530-8.
270. J.T. Heron, D.G. Schlom, and R. Ramesh, “Electric Field Control of Magnetism Using BiFeO₃-Based Heterostructures,” Applied Physics Reviews 1 (2014) 021303-1 – 021303-18.

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271. P.D.C. King, H.I. Wei, Y.F. Nie, M. Uchida, C. Adamo, S. Zhu, X. He, I. Božović, D.G. Schlom, and K.M. Shen, “Atomic-Scale Control of Competing Electronic Phases in Ultrathin LaNiO₃,” Nature Nanotechnology 9 (2014) 443-447. 
272. V. Železny, A. Soukiassian, D.G. Schlom, and X.X. Xi, “Infrared Spectroscopy of an Epitaxial BaTiO₃/SrTiO₃ Superlattice Grown on a (110) SmScO₃ Substrate,” Journal of Applied Physics 115 (2014) 184102-1 – 184102-7.

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273. N. Shukla, A. Parihar, E. Freeman, H. Paik, G. Stone, V. Narayanan, H. Wen, Z. Cai, V. Gopalan, R. Engel-Herbert, D.G. Schlom, A. Raychowdhury, and S. Datta, “Synchronized Charge Oscillations in Correlated Electron Systems” Scientific Reports 4 (2014) 4964-1 – 4964-6.
274. K. Zhang, S.J. Kim, Y. Zhang, T. Heeg, D.G. Schlom, W. Shen, and X.Q. Pan, “Epitaxial Growth of ZnO on (111) Si Free of an Amorphous Interlayer,” Journal of Physics D:  Applied Physics 47 (2014) 105302-1 – 105302-6.

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275. D. Schick, M. Herzog, H. Wen, P. Chen, C. Adamo, P. Gaal, D.G. Schlom, G.P. Evans, Y. Li, and M. Bargheer, “Localized Excited Charge Carriers Generate Ultrafast Inhomogeneous Strain in the Multiferroic BiFeO₃,” Physical Review Letters 112 (2014) 097602-1 – 097602-6.

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276. J.A. Mundy, D. Hodash, A. Melville, R. Held, T. Mairoser, D.A. Muller, L.F. Kourkoutis, A. Schmehl, and D.G. Schlom, “Hetero-Epitaxial EuO Interfaces Studied by Analytic Electron Microscopy,” Applied Physics Letters 104 (2014) 091601-1 – 091601-5.

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277. J.W. Tashman, J.H. Lee, H. Paik, J.A. Moyer, R. Misra, J.A. Mundy, T. Spila, T.A. Merz, J. Schubert, D.A. Muller, P. Schiffer, and D.G. Schlom, “Epitaxial Growth of VO₂ by Periodic Annealing,” Applied Physics Letters 104 (2014) 063104-1 – 063104-5.

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278. D.G. Schlom, L.Q. Chen, C.J. Fennie, V. Gopalan, D.A. Muller, X.Q. Pan, R. Ramesh, and R. Uecker, “Elastic Strain Engineering of Ferroic Oxides,” MRS Bulletin 39 (2014) 118-130.
279. J. Ravichandran, A.K. Yadav, R. Cheaito, P.B. Rossen, A. Soukiassian, S.J. Suresha, J.C. Duda, B.M. Foley, C.H. Lee, Y. Zhu, A.W. Lichtenberger, J.E. Moore, D.A. Muller, D.G. Schlom, P.E. Hopkins, A. Majumdar, R. Ramesh, and M.A. Zurbuchen, “Crossover from Incoherent to Coherent Phonon Scattering in Epitaxial Oxide Superlattices,” Nature Materials 13 (2014) 168-172.
280. J.A. Moyer, R. Misra, J.A. Mundy, C.M. Brooks, J.T. Heron, D.A. Muller, D.G. Schlom, and P. Schiffer, “Intrinsic Magnetic Properties of Hexagonal LuFeO₃ and the Effects of Nonstoichiometry,” APL Materials 2 (2014) 012106-1 – 012106-8.

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281. E. Freeman, G. Stone, N. Shukla, H. Paik, J.A. Moyer, Z. Cai, H. Wen, R. Engel-Herbert, D.G. Schlom, V. Gopalan, and S. Datta, “Nanoscale Structural Evolution of Electrically Driven Insulator to Metal Transition in Vanadium Dioxide,” Applied Physics Letters 103 (2013) 263109-1 – 263109-4.

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282. D.M. Kaz, C.G. Bischak, C.L. Hetherington, H.H. Howard, X. Marti, J.D. Clarkson, C. Adamo, D.G. Schlom, R. Ramesh, S. Aloni, D.F. Ogletree, and N.S. Ginsberg, “Bright Cathodoluminescent Thin Films for Scanning Nano-Optical Excitation and Imaging,” ACS Nano 7 (2013) 10397-10404.
283. A. Melville, T. Mairoser, A. Schmehl, M. Fischer, S. Gsell, M. Schreck, D.D. Awschalom, T. Heeg, B. Holländer, J. Schubert, and D.G. Schlom, “Epitaxial Growth of Europium Monoxide on Diamond,” Applied Physics Letters 103 (2013) 222402-1 – 222402-5.

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284. G. Subramanyam, M.W. Cole, N.X. Sun, T.S. Kalkur, N.M. Sbrockey, G.S. Tompa, X. Guo, C.L. Chen, S.P. Alpay, G.A. Rossetti, Jr., K. Dayal, L.Q. Chen, and D.G. Schlom, “Challenges and Opportunities for Multi-Functional Oxide Thin films for Voltage Tunable Radio Frequency/Microwave Components,” Journal of Applied Physics 114 (2013) 191301.

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285. L. Li, P. Gao, C.T. Nelson, J.R. Jokisaari, Y. Zhang, S-J. Kim, A. Melville, C. Adamo, D.G. Schlom, and X.Q. Pan, “Atomic Scale Structure Changes Induced by Charged Domain Walls in Ferroelectric Materials,” Nano Letters 13 (2013) 5218-5223.
286. Y. Yang, C.M. Schlepütz, C. Adamo, D.G. Schlom, and R. Clarke, “Untilting BiFeO₃:  The Influence of Substrate Boundary Conditions in Ultra-Thin BiFeO₃ on SrTiO₃,” APL Materials 1 (2013) 052102-1 – 052102-6.
287. R.L. Johnson-Wilke, D. Marincel, S. Zhu, M.P. Warusawithana, A. Hatt, J. Sayre, K.T. Delaney, R. Engel-Herbert, C.M. Schlepütz, J.-W. Kim, V. Gopalan, N.A. Spaldin, D.G. Schlom, P.J. Ryan, and S. Trolier-McKinstry, “Quantification of Octahedral Rotations in Strained LaAlO₃ Films via Synchrotron X-Ray Diffraction,” Physical Review B 88 (2013) 174101-1 – 174101-8.
288. S. Liu, B. Guillet, A. Aryan, C. Adamo, C. Fur, J.-M. Routoure, F. Lemarié, D.G. Schlom, and L. Méchin, “La_0.7Sr_0.3MnO₃ Suspended Microbridges for Uncooled Bolometers made using Reactive Ion Etching of the Silicon Substrates,” Microelectronic Engineering 111 (2013) 101-104.
289. H. Wen, L. Guo, E. Barnes, J.H. Lee, D.A. Walko, R.D. Schaller, J.A. Moyer, R. Misra, Y. Li, E.M. Dufresne, D.G. Schlom, V. Gopalan, and J.W. Freeland, “Structural and Electronic Recovery Pathways of a Photoexcited Ultrathin VO₂ Film,” Physical Review B 88 (2013) 165424-1 – 165424-8.
290. C.H. Lee, N.D. Orloff, T. Birol, Y. Zhu, V. Goian, E. Rocas, R. Haislmaier, E. Vlahos, J.A. Mundy, L.F. Kourkoutis, Y. Nie, M.D. Biegalski, J. Zhang, M. Bernhagen, N.A. Benedek, Y. Kim, J.D. Brock, R. Uecker, X.X. Xi, V. Gopalan, D. Nuzhnyy, S. Kamba, D.A. Muller, I. Takeuchi, J.C. Booth, C.J. Fennie, and D.G. Schlom, “Exploiting Dimensionality and Defect Mitigation to Create Tunable Microwave Dielectrics,” Nature 502 (2013) 532-536.
291. N.F. Quackenbush, J.W. Tashman, J.A. Mundy, S. Sallis, H. Paik, R. Misra, J.A. Moyer, J.-H. Guo, D.A. Fischer, J.C. Woicik, D.A. Muller, D.G. Schlom, and L.F.J. Piper, “Nature of the Metal Insulator Transition in Ultrathin Epitaxial Vanadium Dioxide,” Nano Letters 13 (2013) 4857-4861.
292. S. Stoughton, M. Showak, Q. Mao, P. Koirala, D.A. Hillsberry, S. Sallis, L.F. Kourkoutis, K. Nguyen, L.F.J. Piper, D.A. Tenne, N.J. Podraza, D.A. Muller, C. Adamo, and D.G. Schlom, “Adsorption-Controlled Growth of BiVO₄ by Molecular-Beam Epitaxy,” APL Materials 1 (2013) 042112-1 – 042112-8.
293. Y. Zhu, A. Soukiassian, D.G. Schlom, D.A. Muller, and C. Dwyer, “Towards Artifact-Free Atomic-Resolution Elemental Mapping with Electron Energy-Loss Spectroscopy,” Applied Physics Letters 103 (2013) 141908-1 – 141908-3.
294. X. Ke, T. Birol, R. Misra, J.-H. Lee, B.J. Kirby, D.G. Schlom, C.J. Fennie, and J.W. Freeland, “Structural Control of Magnetic Anisotropy in a Strain-Driven Multiferroic EuTiO₃ Thin Film,” Physical Review B 88 (2013) 094434-1 – 094434-3.
295. R. Uecker, D. Klimm, R. Bertram, M. Bernhagen, I. Schulze-Jonack, M. Brützam, A. Kwasniewski, T.M. Gesing, and D.G. Schlom, “Growth and Investigation of Nd_1-xSm_xScO₃ and Sm_1–xGd_xScO₃ Solid-Solution Single Crystals,” Acta Physica Polonica A 124 (2013) 295-300.

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296. M.P. Warusawithana, C. Richter, J.A. Mundy, P. Roy, J. Ludwig, S. Paetel, T. Heeg, A.A. Pawlicki, L.F. Kourkoutis, M. Zheng, M. Lee, B. Mulcahy, W. Zander, Y. Zhu, J. Schubert, J.N. Eckstein, D.A. Muller, C.S. Hellberg, J. Mannhart, and D.G. Schlom, “LaAlO₃ Stoichiometry is Key to Electron Liquid Formation at LaAlO₃/SrTiO₃ Interfaces,” Nature Communications 4 (2013) 2351-1 – 2351-9. 
297. R.C. Haislmaier, N.J. Podraza, S. Denev, A. Melville, D.G. Schlom, and V. Gopalan, “Large Nonlinear Optical Coefficients in Pseudo-Tetragonal BiFeO₃ Thin Films,” Applied Physics Letters 103 (2013) 031906-1 – 031906-4.

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298. Y. Wang, C. Nelson, A. Melville, B. Winchester, S. Shang, Z.K. Liu, D.G. Schlom, X.Q. Pan, and L.Q. Chen, “BiFeO₃ Domain Wall Energies and Structures:  A Combined Experimental and Density Functional Theory + U Study,” Physical Review Letters 110 (2013) 267601-1 – 267601-5.

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299. L. Méchin, S. Wu, B. Guillet, P. Perna, C. Fur, S. Lebargy, C. Adamo, D.G. Schlom, and J.M. Routoure, “Experimental Evidence of Correlation between 1/f Noise Level and Metal-to-Insulator Transition Temperature in Epitaxial La_0.7Sr_0.3MnO₃ Thin Films,” Journal of Physics D: Applied Physics 46 (2013) 202001-1 – 072106-6.

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300. P.E. Hopkins, C. Adamo, L. Ye, B.D. Huey, S.R. Lee, D.G. Schlom, and J.F. Ihlefeld, “Effects of Coherent Ferroelastic Domain Walls on the Thermal Conductivity and Kapitza Conductance in Bismuth Ferrite,” Applied Physics Letters 102 (2013) 121903-1 – 121903-5.

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301. C.H. Lee, N.J. Podraza, Y. Zhu, R.F. Berger, S. Shen, M. Sestak, R.W. Collins, L.F. Kourkoutis, J.A. Mundy, H.Q. Wang, Q. Mao, X.X. Xi, L.J. Brillson, J.B. Neaton, D.A. Muller, and D.G. Schlom, “Effect of Reduced Dimensionality on the Optical Band Gap of SrTiO₃,” Applied Physics Letters 102 (2013) 122901-1 – 122901-5.

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302. Y.N. Geng, J.H. Lee, D.G. Schlom, J.W. Freeland, W.D. Wu, “Magnetic Inhomogeneity in a Multiferroic EuTiO₃ Thin Film,” Physical Review B 87 (2013) 121109-1 – 121109-4

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303. C.H. Lee, V. Skoromets, M.D. Biegalski, S. Lei, R. Haislmaier, M. Bernhagen, R. Uecker, X.X. Xi, V. Gopalan, X. Martí, S. Kamba, P. Kužel, and D.G. Schlom, “Effect of Stoichiometry on the Dielectric Properties and Soft Mode Behavior of Strained Epitaxial SrTiO₃ Thin Films on DyScO₃ Substrates,” Applied Physics Letters 102 (2013) 082905-1 – 072106-5.

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304. D.E. Shai, C. Adamo, D.W. Shen, C.M. Brooks, J.W. Harter, E.J. Monkman, B. Burganov, D.G. Schlom, and K.M. Shen, “Quasiparticle Mass Enhancement and Temperature Dependence of the Electronic Structure of Ferromagnetic SrRuO₃ Thin Films,” Physical Review Letters 110 (2013) 087004-1 – 087004-5.

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305. A. Kar, N. Shukla, E. Freeman, H. Paik, H. Liu, R. Engel-Herbert, S.S.N. Bhardwaja, D.G. Schlom, and S. Datta, “Intrinsic Electronic Switching Time in Ultrathin Epitaxial Vanadium Dioxide Thin Film,” Applied Physics Letters 102 (2013) 072106-1 – 072106-5.

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306. A. Melville, T. Mairoser, A. Schmehl, T. Birol, T. Heeg, B. Holländer, J. Schubert, C.J. Fennie, and D.G. Schlom, “Effect of Film Thickness and Biaxial Strain on the Curie Temperature of EuO,” Applied Physics Letters 102 (2013) 062404-1 – 062404-5.

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307. L. Maritato, A. Galdi, P. Orgiani, J.W. Harter, J. Schubert, K.M. Shen, and D.G. Schlom, “Layer-by-Layer Shuttered Molecular-Beam Epitaxial Growth of Superconducting Sr_1‑xLa_xCuO₂ Thin Films,” Journal of Applied Physics 113 (2013) 053911-1 – 053911-5.

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308. S. Kamba, V. Goian, D. Nuzhnyy, V. Bovtun, M. Kempa, J. Prokleška, M. Bernhagen, R. Uecker, and D.G. Schlom. “Polar Phonon Anomalies in Single-Crystalline TbScO₃,” Phase Transitions 86 (2012) 206-216.
309. Y. Tian, C. Adamo, D.G. Schlom, and K.S. Burch, “Optical Properties of SrTiO₃ on Silicon(100),” Applied Physics Letters 102 (2013) 041906-1 – 041906-4.

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310. H. Wen, P. Chen, M.P. Cosgriff, D.A. Walko, J.H. Lee, C. Adamo, R.D. Schaller, J.F. Ihlefeld, E.M. Dufresne, D.G. Schlom, P.G. Evans, J.W. Freeland, and Y. Li, “Electronic Origin of Ultrafast Photoinduced Strain in BiFeO₃,” Physical Review Letters 110 (2013) 037601-1 – 037601-5.

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311. T. Mairoser, F. Loder, A. Melville, D.G. Schlom, and A. Schmehl, “Influence of Chemical Doping on the Magnetic Properties of EuO,” Physical Review B 87 (2013) 014416-1 – 014416-5.

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312. P.J. Ryan, J.-W. Kim, T. Birol, P. Thompson, J.-H. Lee, X. Ke, P.S. Normile, E. Karapetrova, P. Schiffer, S.D. Brown, C.J. Fennie, and D.G. Schlom “Reversible Control of Magnetic Interactions by Electric Field in a Single-Phase Material,” Nature Communications 4 (2013) 1334-1 – 1334-8.
313. J.W. Harter, L. Maritato, D.E. Shai, E.J. Monkman, Y. Nie, D.G. Schlom, and K.M. Shen, “Nodeless Superconducting Phase Arising from a Strong (π,π) Antiferromagnetic Phase in the Infinite-Layer Electron-Doped Sr_1−xLa_xCuO₂ Compound,” Physical Review Letters 109 (2012) 267001-1 – 267001-5.

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314. J.C. Yang, Q. He, S.J. Suresha, C.Y. Kuo, C.Y. Peng, R.C. Haislmaier, M.A. Motyka, G. Sheng, C. Adamo, H.J. Lin, Z. Hu, L. Chang, L.H. Tjeng, E. Arenholz, N.J. Podraza, M. Bernhagen, R. Uecker, D.G. Schlom, V. Gopalan, L.Q. Chen, C.T. Chen, R. Ramesh, and Y.H. Chu, “Orthorhombic BiFeO₃,” Physical Review Letters 109 (2012) 247606-1 – 247606-5.

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315. M. Matsubara, A. Schmehl, J. Mannhart, D.G. Schlom, and M. Fiebig, “Giant Third-Order Magneto-Optical Rotation in Ferromagnetic EuO,” Physical Review B 86 (2012) 195127-1 – 195127-6.

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316. L.W. Martin and D.G. Schlom, “Advanced Synthesis Techniques and Routes to New Single-Phase Multiferroics,” Current Opinion in Solid State and Materials Science 16 (2012) 199-215.

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317. 

     E.J. Monkman, C. Adamo, J.A. Mundy, D.E. Shai, J.W. Harter, D. Shen, B. Burganov, D.A. Muller, D.G. Schlom, and K.M. Shen, “Quantum Many-Body Interactions in Digital Oxide Superlattices,” Nature Materials 11 (2012) 855-859.
318. C.M. Brooks, R. Misra, J.A. Mundy, L.A. Zhang, B.S. Holinsworth, K.R. O’Neal, T. Heeg, W. Zander, J. Schubert, J.L. Musfeldt, Z.K. Liu, D.A. Muller, P. Schiffer, and D.G. Schlom, “The Adsorption-Controlled Growth of LuFe₂O₄ by Molecular-Beam Epitaxy,” Applied Physics Letters 101 (2012) 132907-1 – 132907-4.

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319. K. Kathan-Galipeau, P.P. Wu, Y.L. Li, L.Q. Chen, A. Soukiassian, Y. Zhu, D.A. Muller, X.X. Xi, D.G. Schlom, and D.A. Bonnell, “Direct Determination of the Effect of Strain on Domain Morphology in Ferroelectric Superlattices with Scanning Probe Microscopy,” Journal of Applied Physics 112 (2012) 052011-1 – 052011-7.

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320. J.A. Mundy, Q.Y. Mao, C.M. Brooks, D.G. Schlom, and D.A. Muller, “Atomic-Resolution Chemical Imaging of Oxygen Local Bonding Environments by Electron Energy Loss Spectroscopy,” Applied Physics Letters 101 (2012) 042907-1 – 042907-5.

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321. K. Zhang, M.R. Hao, W. Guo, T. Heeg, D.G. Schlom, W.Z. Shen, and X.Q. Pan, “Low Temperature Electron Transport in Phosphorus-Doped ZnO Films Grown on Si Substrates,” Physica B 407 (2012) 2825-2828.

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322. M.A. Zurbuchen, D.G. Cahill, J. Schubert, Y. Jia, and D.G. Schlom, “Determination of the Thermal Conductivity Tensor of the n=7 Aurivillius Phase Sr₄Bi₄Ti₇O₂₄,” Applied Physics Letters 101 (2012) 021904-1 – 021904-4.
323. D.E. Shai, A.J. Melville, J.W. Harter, E.J. Monkman, D.W. Shen, A. Schmehl, D.G. Schlom, and K.M. Shen, “Temperature Dependence of the Electronic Structure and Fermi-Surface Reconstruction of Eu_1−xGd_xO through the Ferromagnetic Metal-Insulator Transition,” Physical Review Letters 108 (2012) 267003-1 – 267003-5.

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324. G. Lucovsky, L. Miotti, K.P. Bastos, C. Adamo, D.G. Schlom, “Spectroscopic Detection of Hopping Induced Mixed Valence for Ti and Sc in GdSc_1-xTi_xO₃ for x >0.165,” Journal of Nanoscience and Nanotecnology 12 (2012) 4749-4756.
325. L. Méchin, C. Adamo, S. Wu, B. Guillet, S. Lebargy, C. Fur, J.-M. Routoure, S. Mercone, M. Belmeguenai, and D.G. Schlom, “Epitaxial La_0.7Sr_0.3MnO₃ Thin Films Grown on SrTiO₃ Buffered Silicon Substrates by Reactive Molecular-Beam-Epitaxy,” Physica Status Solidi (a) 209 (2012) 1090-1095.
326. A. Melville, T. Mairoser, A. Schmehl, D.E. Shai, E.J. Monkman, J.W. Harter, T. Heeg, B. Holländer, J. Schubert, K.M. Shen, J. Mannhart, and D.G. Schlom, “Lutetium-doped EuO Films Grown by Molecular-Beam Epitaxy,” Applied Physics Letters (2012) 222101-1 – 222101-4.

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327. M.A. Zurbuchen, N.J. Podraza, J. Schubert, Y. Jia, and D.G. Schlom, “Synthesis of the Superlattice Complex Oxide Sr₅Bi₄Ti₈O₂₇ and its Band Gap Behavior,” Applied Physics Letters 100 (2012) 223109-1 – 223109-4.

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328. S. Kamba, V. Goian, M. Orlita, D. Nuzhnyy, J.H. Lee, D.G. Schlom, K.Z. Rushchanskii, M. Ležaić, T. Birol, C.J. Fennie, P. Gemeiner, B. Dkhil, V. Bovtun, M. Kempa, J. Hlinka, and J. Petzelt, “Magnetodielectric Effect and Phonon Properties of Compressively Strained EuTiO₃ Thin Films Deposited on (001)(LaAlO₃)_0.29-(SrAl_1/2Ta_1/2O₃)_0.71,” Physical Review B 85 (2012) 094435-1 – 094435-10.

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329. A. Galdi, C. Aruta, P. Orgiani, C. Adamo, V. Bisogni, N.B. Brookes, G. Ghiringhelli, D.G. Schlom, P. Thakur, and L. Maritato, “Electronic Band Redistribution Probed by Oxygen Absorption Spectra of (SrMnO₃)_n(LaMnO₃)_2n Superlattices,” Physical Review B 85 (2012) 125129-1 – 125129-5.

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330. V. Zelezny, A. Soukiassian, X.X. Xi, D.G. Schlom, J. Hlinka, C. Kadlec, and S.M. Nakhmanson, “Infrared Spectroscopy of Nanoscopic Epitaxial BaTiO₃/SrTiO₃ Superlattices,” Integrated Ferroelectrics 134 (2012) 146-148.
331. P. Gao, C.T. Nelson, J.R. Jokisaari, S-H. Baek, C.W. Bark, Y. Zhang, E. Wang, D.G. Schlom, C.B. Eom, and X.Q. Pan, “Revealing the Role of Defects in Ferroelectric Switching with Atomic Resolution,” Nature Communications 2 (2011) 591-1 – 591-6.
332. S.H. Baek, J. Park, D.M. Kim, V.A. Aksyuk, R.R. Das, S.D. Bu, D.A. Felker, J. Lettieri, V. Vaithyanathan, S.S.N. Bharadwaja, N. Bassiri-Gharb, Y.B. Chen, H.P. Sun, C.M. Folkman, H.W. Jang, D.J. Kreft, S.K. Streiffer, R. Ramesh, X.Q. Pan, S. Trolier-McKinstry, D.G. Schlom, M.S. Rzchowski, R.H. Blick, and C.B. Eom, “Giant Piezoelectricity on Si for Hyperactive MEMS,” Science 334 (2011) 958-961.
333. C.T. Nelson, P. Gao, J.R. Jokisaari, C. Heikes, C. Adamo, A. Melville, S-H. Baek, C.M. Folkman, B. Winchester, Y. Gu, Y. Liu, K. Zhang, E. Wang, J. Li, L.Q. Chen, C.B. Eom, D.G. Schlom, and X.Q. Pan, “Domain Dynamics During Ferroelectric Switching,” Science 334 (2011) 968-971. 
334. M.B. Katz, G.W. Graham, Y. Duan, H. Liu, C. Adamo, D.G. Schlom, and X.Q. Pan, “Self-Regeneration of Pd-LaFeO₃ Catalysts: New Insight from Atomic-Resolution Electron Microscopy,” Journal of the American Chemical Society 133 (2011) 18090-18093.
335. M. Belmeguenai, S. Mercone, C. Adamo, T. Chauveau, L. Méchin, P. Monod, P. Moch, and D.G. Schlom, “La_0.7Sr_0.3MnO₃ Thin Films on SrTiO₃ and CaTiO₃ Buffered Si Substrates:  Structural, Static, and Dynamic Magnetic Properties,” Journal of Nanoparticle Research 13 (2011) 5669-5675.

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336. H.J. Gardner, A. Kumar, L. Yu, P. Xiong, M.P. Warusawithana, L. Wang, O. Vafek, and D.G. Schlom, “Enhancement of Superconductivity by a Parallel Magnetic Field in Two-Dimensional Superconductors,” Nature Physics 7 (2011) 895-900.
337. J. Desmarais, J.F. Ihlefeld, T. Heeg, J. Schubert, D.G. Schlom, and B.D. Huey, “Mapping and Statistics of Ferroelectric Domain Boundary Angles and Types,” Applied Physics Letters 99 (2011) 162902-1 – 162902-3.

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338. L.F. Kourkoutis, M.K. Parker, V. Vaithyanathan, D.G. Schlom, and D.A. Muller, “Direct Measurement of Electron Channeling in a Crystal using Scanning Transmission Electron Microscopy,” Physical Review B 84 (2011) 075485-1 – 075485-7.

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339. D-W. Oh, J. Ravichandran, C-W. Liang, W. Siemons, B. Jalan, C.M. Brooks, M. Huijben, D.G. Schlom, S. Stemmer, L.W. Martin, A. Majumdar, R. Ramesh, and D.G. Cahill, “Thermal Conductivity as a Metric for the Crystalline Quality of SrTiO₃ Epitaxial Layers,” Applied Physics Letters 98 (2011) 221904-1 – 221904-3.

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340. M. Belmeguenai, S. Mercone, C. Adamo, P. Moch, D.G. Schlom, and P. Monod, “Structural and Magnetic Properties of La_0.7Sr_0.3MnO₃ Thin Films Integrated onto Si(100) Substrates with SrTiO₃ as Buffer Layer,” Journal of Applied Physics 109 (2011) 07C120-1 – 07C120-3.

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341. M. Matsubara, C. Becher, A. Schmehl, J. Mannhart, D.G. Schlom, and M. Fiebig, “Optical Second- and Third-Harmonic Generation on the Ferromagnetic Semiconductor Europium Oxide,” Journal of Applied Physics 109 (2011) 07C309-1 – 07C309-3.

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342. A. Schmehl, D.G. Schlom, and J. Mannhart, “Increasing Magnetoresistance Using Magnetic-Field-Tunable Interfaces,” Advanced Materials 23 (2011) 1242-1245.

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343. T. Mairoser, A. Schmehl, A. Melville, T. Heeg, W. Zander, J. Schubert, D.E. Shai, E.J. Monkman, K.M. Shen, T.Z. Regier, D.G. Schlom, and J. Mannhart, “Influence of the Substrate Temperature on the Curie Temperature and Charge Carrier Density of Epitaxial Gd-Doped EuO Films,” Applied Physics Letters 98 (2011) 102110-1 – 102110-3.

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344. D.G. Schlom and J. Mannhart, “Oxide Electronics:  Interface Takes Charge over Si,” Nature Materials 10 (2011) 168-169.
345. D. Nuzhnyy, J. Petzelt, S. Kamba, X. Martí, T. Čechal, C.M. Brooks, and D.G. Schlom, “Infrared Phonon Spectroscopy of a Compressively Strained (001) SrTiO₃ Film Grown on a (110) NdGaO₃ Substrate,” Journal of Physics: Condensed Matter 23 (2011) 045901-1 – 045901-8.

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346. A. Bruchhausen, A. Fainstein, S. Tinte, A. Soukiassian, D.G. Schlom, and X.X. Xi, “Coupling between Light and Terahertz-Frequency Acoustic Phonons in Ferroelectric BaTiO₃/SrTiO₃ Superlattices,” Chinese Journal of Physics 49 (2011) 159-170.
347. K. Kathan-Galipeau, P.P. Wu, Y.L. Li, L.Q. Chen, A. Soukiassian, X.X. Xi, D.G. Schlom, and D.A. Bonnell, “Quantification of Internal Electric Fields and Local Polarization in Ferroelectric Superlattices,” ACS Nano 5 (2011) 640-646.
348. V. Bovtun, V. Pashkov, M. Kempa, S. Kamba, A. Eremenko, V. Molchanov, Y. Poplavko, Y. Yakymenko, J.H. Lee, and D.G. Schlom, “An Electrode-Free Method of Characterizing the Microwave Dielectric Properties of High-Permittivity Thin Films,” Journal of Applied Physics 109 (2011) 024106-1 – 024106-6.

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349. G. Lucovsky, L. Miotti, K.P. Bastos, C. Adamo, and D.G. Schlom, “Spectroscopic Detection of Hopping Induced Mixed Valence for Ti and Sc in GdSc_1−xTi_xO₃ for x Greater than the Percolation Threshold of ~0.16,” Journal of Vacuum Science and Technology B 29 (2011) 01AA02-1 – 01AA02-6.
350. B. Strukov, S. Davitadze, I. Shnaidshtein, V.V. Lemanov, S.G. Shulman, Y. Uesu, S. Asanuma, B. Noheda, A. Vlooswijk, D. Schlom, A.H.G. Soukiassian, and X.X. Xi, “Features of Phase Transitions in Nanostructured Ferroelectric Oxides Revealed from Calorimetric Data,” Ferroelectrics 414 (2011) 1-11.
351. T. Mairoser, A. Schmehl, A. Melville, T. Heeg, L. Canella, P. Böni, W. Zander, J. Schubert, D.E. Shai, E.J. Monkman, K.M. Shen, D.G. Schlom, and J. Mannhart, “Is there an Intrinsic Limit to the Charge-Carrier-Induced Increase of the Curie Temperature of EuO?,” Physical Review Letters 105 (2010) 257206-1 – 257206-4.

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352. A. Perucchi, L. Baldassarre, A. Nucara, P. Calvani, C. Adamo, D.G. Schlom, P. Orgiani, L. Maritato, and S. Lupi, “Optical Properties of (SrMnO₃)_n/(LaMnO₃)_2n Superlattices: An Insulator-to-Metal Transition Observed in the Absence of Disorder,” Nano Letters 10 (2010) 4819-4823.
353. J. Hlinka, V. Železny, S.M. Nakhmanson, A. Soukiassian, X.X. Xi, and D.G. Schlom, “Soft-Mode Spectroscopy of Epitaxial BaTiO₃/SrTiO₃ Superlattices,” Physical Review B 82 (2010) 224102-1 – 224102-5.
354. D.G. Schlom and L.N. Pfeiffer, “Oxide Electronics:  Upward Mobility Rocks!,” Nature Materials 9 (2010) 881-883.
355. G. Sheng, Y.L. Li, J.X. Zhang, S. Choudhury, Q.X. Jia, V. Gopalan, D.G. Schlom, Z.K. Liu, and L.Q. Chen, “Phase Transitions and Domain Stabilities in Biaxially Strained (001) SrTiO₃ Epitaxial Thin Films,” Journal of Applied Physics 108 (2010) 084113-1 – 084113-6.

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356. D.A. Tenne, A.K. Farrar, C.M. Brooks, T. Heeg, J. Schubert, H.W. Jang, C.W. Bark, C.M. Folkman, C.B. Eom, and D.G. Schlom, “Ferroelectricity in Nonstoichiometric SrTiO₃ Films Studied by Ultraviolet Raman Spectroscopy,” Applied Physics Letters 97 (2010) 142901-1 – 142901-3.

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357. C.J. Fennie and D.G. Schlom, “Transition-Metal Oxides:  Resistance is not Futile,” Nature Materials 9 (2010) 787-788.
358. A. Kumar, S. Denev, R.J. Zeches, E. Vlahos, N.J. Podraza, A. Melville, D.G. Schlom, R. Ramesh, and V. Gopalan, “Probing Mixed Tetragonal/Rhombohedral-Like Monoclinic Phases in Strained Bismuth Ferrite Films by Optical Second Harmonic Generation,” Applied Physics Letters 97 (2010) 112903-1 – 112903-3.

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359. J.H. Lee, L. Fang, E. Vlahos, X. Ke, Y.W. Jung, L.F. Kourkoutis, J-W. Kim, P.J. Ryan, T. Heeg, M. Roeckerath, V. Goian, M. Bernhagen, R. Uecker, P.C. Hammel, K.M. Rabe, S. Kamba, J. Schubert, J.W. Freeland, D.A. Muller, C.J. Fennie, P. Schiffer, V. Gopalan, E. Johnston-Halperin, and D.G. Schlom, “A Strong Ferroelectric Ferromagnet Created by means of Spin-Lattice Coupling,” Nature 466 (2010) 954-958; J.H. Lee, L. Fang, E. Vlahos, X. Ke, Y.W. Jung, L.F. Kourkoutis, J.-W. Kim, P.J. Ruan, T. Heeg, M. Roeckerath, V. Goian, M. Bernhagen, R. Uecker, P. C. Hammel, K.M. Rabe, S. Kamba, J. Schubert, J.W. Freeland, D.A. Muller, C.J. Fennie, P. Schiffer, V. Gopalan, E. Johnston-Halperin, and D. Schlom, “A Strong Ferrolectric Ferromagnet Created by Means of Spin-Lattice Coupling,” Nature 476 (2011) 114-114. 
360. S. Coh, T. Heeg, J.H. Haeni, M.D. Biegalski, J. Lettieri, L.F. Edge, K.E. O’Brien, M. Bernhagen, P. Reiche, R. Uecker, S. Trolier-McKinstry, D.G. Schlom, and D. Vanderbilt, “Si-Compatible Candidates for High- Dielectrics with the Pbnm Perovskite Structure,” Physical Review B 82 (2010) 064101-1 – 064101-16.
361. A.J. Millis and D.G. Schlom, “Electron-Hole Liquids in Transition-Metal Oxide Heterostructures,” Physical Review B 82 (2010) 073101-1 – 073101-4.
362. M. Matsubara, A. Schmehl, J. Mannhart, D.G. Schlom, and M. Fiebig, “Large Nonlinear Magneto-Optical Effect in the Centrosymmetric Ferromagnetic Semiconductor EuO,” Physical Review B 81 (2010) 214447-1 – 214447-6.

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363. J.H. Lee, X. Ke, R. Misra, J.F. Ihlefeld, X.S. Xu, Z.G. Mei, T. Heeg, M. Roeckerath, J. Schubert, Z.K. Liu, J.L. Musfeldt, P. Schiffer, and D.G. Schlom, “Adsorption-Controlled Growth of BiMnO₃ Films by Molecular-Beam Epitaxy,” Applied Physics Letters 96 (2010) 262905-1 – 262905-3.

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364. X. Weng, W. Tian, D.G. Schlom, and E.C. Dickey, “Structure and Chemistry of the (111)Sc₂O₃/(0001) GaN Epitaxial Interface,” Applied Physics Letters 96 (2010) 241901-1 – 241901-3.

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365. G. Sheng, Y.L. Li, J.X. Zhang, S. Choudhury, Q.X. Jia, V. Gopalan, D.G. Schlom, Z.K. Liu, and L.Q. Chen, “A Modified Landau–Devonshire Thermodynamic Potential for Strontium Titanate,” Applied Physics Letters 96 (2010) 232902-1 – 232902-3.

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366. H.W. Jang, A. Kumar, S. Denev, M.D. Biegalski, P. Maksymovych, C.W. Bark, C.T. Nelson, C.M. Folkman, S.H. Baek, N. Balke, C.M. Brooks, D.A. Tenne, D.G. Schlom, L.Q. Chen, X.Q. Pan, S.V. Kalinin, V. Gopalan, and C.B. Eom, “Ferroelectricity in Strain-Free SrTiO₃ Thin Films,” Physical Review Letters 104 (2010) 197601-1 – 197601-4.

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367. X.S. Xu, J.F. Ihlefeld, J.H. Lee, O.K. Ezekoye, E. Vlahos, R. Ramesh, V. Gopalan, X.Q. Pan, D.G. Schlom, and J.L. Musfeldt, “Tunable Band Gap in Bi(Fe_1−xMn_x)O₃ Films,” Applied Physics Letters 96 (2010) 192901-1 – 192901-3.

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368. N.D. Lanzillotti-Kimura, A. Fainstein, B. Perrin, B. Jusserand, A. Soukiassian, X.X. Xi, and D.G. Schlom, “Enhancement and Inhibition of Coherent Phonon Emission of a Ni Film in a BaTiO₃/SrTiO₃ Cavity,” Physical Review Letters 104 (2010) 187402-1 – 187402-4.
369. P. Somers, A. Stesmans, V.V. Afanas’ev, W. Tian, L.F. Edge, and D.G. Schlom, “Comparative Electron Spin Resonance Study of epi-Lu₂O₃/(111)Si and a-Lu₂O₃/(100)Si Interfaces:  Misfit Point Defects,” Journal of Applied Physics 107 (2010) 094502-1 – 094502-12.

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370. A. Ali, S. Koveshnikov, S. Oktyabrsky, R. Kambhampati, T. Heeg, D. Schlom, and S. Datta, “Small-Signal Response of Inversion Layers in High-Mobility In_0.53Ga_0.47As MOSFETs made with Thin High-k Dielectrics,” IEEE Transactions on Electron Devices 57 (2010) 742-748.

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371. P. Chen, N.J. Podraza, X.S. Xu, A. Melville, E. Vlahos, V. Gopalan, R. Ramesh, D.G. Schlom, and J.L. Musfeldt, “Optical Properties of Quasi-Tetragonal BiFeO₃ Thin Films,” Applied Physics Letters 96 (2010) 131907-1 – 131907-3.

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372. J. Mannhart and D.G. Schlom, “Oxide Interfaces—An Opportunity for Electronics,” Science 327 (2010) 1607-1611.
373. D.G. Cahill, A. Melville, D.G. Schlom, and M.A. Zurbuchen, “Low Thermal Conductivity of CsBiNb₂O₇ Epitaxial Layers,” Applied Physics Letters 96 (2010) 121903-1 – 121903-3.

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374. X.H. Pan, W. Guo, W. Tian, H.P. He, Z.Z. Ye, X.Q. Gu, D.G. Schlom, and X.Q. Pan, “Optical Properties of ZnO/Zn_0.9Mg_0.1O Multiple Quantum Wells Grown on (111) Si Using Buffer Assisted Pulsed-Laser Deposition,” Journal of Applied Physics 107 (2010) 033102-1 – 033102-4.
375. M. Belmeguenai, S. Mercone, C. Adamo, L. Méchin, C. Fur, P. Monod, P. Moch, and D.G. Schlom, “Temperature Dependence of Magnetic Properties of La_0.7Sr_0.3MnO₃/SrTiO₃ Thin Films on Silicon Substrates,” Physical Review B 81 (2010) 054410-1 – 054410-8.

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376. X.H. Pan, W. Guo, Z.Z. Ye, B. Liu, Y. Che, C.T. Nelson, Y. Zhang, W. Tian, D.G. Schlom, and X.Q. Pan, “Epitaxial Zn_1–xMg_xO Films Grown on (111) Si by Pulsed Laser Deposition,” Chemical Physics Letters 485 (2010) 363–366.

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377. M.A. Zurbuchen, V.O. Sherman, A.K. Tagantsev, J. Schubert, M.E. Hawley, D.D. Fong, S.K. Streiffer, Y. Jia, W. Tian, and D.G. Schlom, “Synthesis, Structure, and Electrical Behavior of Sr₄Bi₄Ti₇O₂₄,” Journal of Applied Physics 107 (2010) 024106-1 – 024106-9.

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378. M. Roeckerath, J.M.J. Lopes, E. Durğun Özben, C. Urban, J. Schubert, S. Mantl, Y. Jia, and D.G. Schlom, “Investigation of Terbium Scandate as an Alternative Gate Dielectric in Fully Depleted Transistors,” Applied Physics Letters 96 (2010) 013513-1 – 013513-3.

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379. L.F. Kourkoutis, H.L. Xin, T. Higuchi, Y. Hotta, J.H. Lee, Y. Hikita, D.G. Schlom, H.Y. Hwang, and D.A. Muller, “Atomic-Resolution Spectroscopic Imaging of Oxide Interfaces,” Philosophical Magazine 90 (2010) 4731-4749.

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380. D. Nuzhnyy, J. Petzelt, S. Kamba, P. Kužel, C. Kadlec, V. Bovtun, M. Kempa, J. Schubert, C.M. Brooks, and D.G. Schlom, “Soft Mode Behavior in SrTiO₃/DyScO₃ Thin Films:  Evidence of Ferroelectric and Antiferrodistortive Phase Transitions,” Applied Physics Letters 95 (2009) 232902-1 – 232902-3.

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381. A. Schmehl, V. Vaithyanathan, A. Herrnberger, S. Thiel, C. Richter, T. Heeg, M. Röckerath, L.F. Kourkoutis, S. Mühlbauer, P. Böni, D.A. Muller, Y. Barash, J. Schubert, J. Mannhart, and D.G. Schlom, “Comment on “Half-Metallicity in Europium Oxide Conductively Matched with Silicon,”” Physical Review B 80 (2009) 237301-1 – 237301-2.
382. G. Lucovsky, K-B. Chung, L. Miotti, K. Pas Bastos, C. Amado, and D.G. Schlom, “Comparisons between Intrinsic Bonding Defects in d⁰ Transition Metal Oxide such as HfO₂, and Impurity Atom Defects in d⁰ Complex Oxides such as GdScO₃,” Solid-State Electronics 53 (2009) 1273–1279.

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383. R.J. Zeches, M.D. Rossell, J.X. Zhang, A.J. Hatt, Q. He, C.-H. Yang, A. Kumar, C.H. Wang, A. Melville, C. Adamo, G. Sheng, Y.-H. Chu, J.F. Ihlefeld, R. Erni, C. Ederer, V. Gopalan, L.Q. Chen, D.G. Schlom, N.A. Spaldin, L.W. Martin, and R. Ramesh, “A Strain-Driven Morphotropic Phase Boundary in BiFeO₃,” Science 326 (2009) 977-980.
384. D.A. Tenne, P. Turner, J.D. Schmidt, M. Biegalski, Y.L. Li, L.Q. Chen, A. Soukiassian, S. Trolier-McKinstry, D.G. Schlom, X.X. Xi, D.D. Fong, P.H. Fuoss, J.A. Eastman, G.B. Stephenson, C. Thompson, and S.K. Streiffer, “Ferroelectricity in Ultrathin BaTiO₃ Films:  Probing the Size Effect by Ultraviolet Raman Spectroscopy,” Physical Review Letters 103 (2009) 177601-1 – 177601-4.
385. X.H. Pan, W. Guo, Z.Z. Ye, B. Liu, Y. Che, W. Tian, D.G. Schlom, and X.Q. Pan, “Temperature-Dependent Hall and Photoluminescence Evidence for Conduction-Band Edge Shift Induced by Alloying ZnO with Magnesium,” Applied Physics Letters 95 (2009) 152105-1 – 152105-3.

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386. C. Aruta, C. Adamo, A. Galdi, P. Orgiani, V. Bisogni, N.B. Brookes, J.C. Cezar, P. Thakur, C.A. Perroni, G. De Filippis, V. Cataudella, D.G. Schlom, L. Maritato, and G. Ghiringhelli, “Evolution of Magnetic Phases and Orbital Occupation in (SrMnO₃)_n/(LaMnO₃)_2n Superlattices,” Physical Review B 80 (2009) 140405-1 – 140405-4.
387. C. Adamo, X. Ke, H.Q. Wang, H.L. Xin, T. Heeg, M.E. Hawley, W. Zander, J. Schubert, P. Schiffer, D.A. Muller, L. Maritato, and D.G. Schlom, “Effect of Biaxial Strain on the Electrical and Magnetic Properties of (001) La_0.7Sr_0.3MnO₃ Thin Films,” Applied Physics Letters 95 (2009) 112504-1 – 112504-3.

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388. S.Y. Yang, L.W. Martin, S.J. Byrnes, T.E. Conry, S.R. Basu, D. Paran, L. Reichertz, J. Ihlefeld, C. Adamo, A. Melville, Y.-H. Chu, C.-H. Yang, J.L. Musfeldt, D.G. Schlom, J.W. Ager III, and R. Ramesh, “Photovoltaic Effects in BiFeO₃,” Applied Physics Letters 95 (2009) 062909-1 – 062909-3.

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389. J.F. Ihlefeld, W. Tian, Z.K. Liu, W.A. Doolittle, M. Bernhagen, P. Reiche, R. Uecker, R. Ramesh, and D.G. Schlom, “Adsorption-Controlled Growth of BiFeO₃ by MBE and Integration with Wide Band Gap Semiconductors,” IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control 56 (2009) 1528-1533.

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390. J. Zhang, M. Rutkowski, L.W. Martin, T. Conry, R. Ramesh, J.F. Ihlefeld, A. Melville, D.G. Schlom, and L.J. Brillson, “Surface, Bulk, and Interface Electronic States of Epitaxial BiFeO₃ Films,” Journal of Vacuum Science and Technology B 27 (2009) 2012-2014.

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391. M.D. Biegalski, E. Vlahos, G. Sheng, Y.L. Li, M. Bernhagen, P. Reiche, R. Uecker, S.K. Streiffer, L.Q. Chen, V. Gopalan, D.G. Schlom, and S. Trolier-McKinstry, “Influence of Anisotropic Strain on the Dielectric and Ferroelectric Properties of SrTiO₃ Thin Films on DyScO₃ Substrates,” Physical Review B 79 (2009) 224117-1 – 224117-11.
392. M.O. Ramirez, A. Kumar, S.A. Denev, N.J. Podraza, X.S. Xu, R.C. Rai, Y.H. Chu, J. Seidel, L.W. Martin, S-Y. Yang, E. Saiz, J.F. Ihlefeld, S. Lee, J. Klug, S.W. Cheong, M.J. Bedzyk, O. Auciello, D.G. Schlom, R. Ramesh, J. Orenstein, J.L. Musfeldt, and V. Gopalan, “Magnon Sidebands and Spin-Charge Coupling in Bismuth Ferrite Probed by Nonlinear Optical Spectroscopy,” Physical Review B 79 (2009) 224106-1 – 224106-9.
393. J.H. Lee, X. Ke, N.J. Podraza, L.F. Kourkoutis, T. Heeg, M. Roeckerath, J.W. Freeland, C.J. Fennie, J. Schubert, D.A. Muller, P. Schiffer, and D.G. Schlom, “Optical Band Gap and Magnetic Properties of Unstrained EuTiO₃ Films,” Applied Physics Letters 94 (2009) 212509-1 – 212509-3.

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394. C.M. Brooks, L.F. Kourkoutis, T. Heeg, J. Schubert, D.A. Muller, and D.G. Schlom, “Growth of Homoepitaxial SrTiO₃ Thin Films by Molecular-Beam Epitaxy,” Applied Physics Letters 94 (2009) 162905-1 – 162905-3.
395. M.O. Ramirez, A. Kumar, S.A. Denev, Y.H. Chu, J. Seidel, L.W. Martin, S-Y. Yang, R.C. Rai, X.S. Xue, J.F. Ihlefeld, N.J. Podraza, E. Saiz, S. Lee, J. Klug, S.W. Cheong, M.J. Bedzyk, O. Auciello, D.G. Schlom, J. Orenstein, R. Ramesh, J.L. Musfeldt, A.P. Litvinchuk, and V. Gopalan, “Spin-Charge-Lattice Coupling through Resonant Multimagnon Excitations in Multiferroic BiFeO₃,” Applied Physics Letters 94 (2009) 161905-1 – 161905-3.

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396. M.P. Warusawithana, C. Cen, C.R. Sleasman, J.C. Woicik, Y.L. Li, L.F. Kourkoutis, J.A. Klug, H. Li, P. Ryan, L-P. Wang, M. Bedzyk, D.A. Muller, L.Q. Chen, J. Levy, and D.G. Schlom, “A Ferroelectric Oxide Made Directly on Silicon,” Science 324 (2009) 367-370.
397. X. Ke, C. Adamo, D.G. Schlom, M. Bernhagen, R. Uecker, and P. Schiffer, “Low Temperature Magnetism in the Perovskite Substrate DyScO₃,” Applied Physics Letters 94 (2009) 152503-1 – 152503-3.

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398. E. Arenholz, A. Schmehl, D.G. Schlom, and G. van der Laan, “Contribution of Eu 4f States to the Magnetic Anisotropy of EuO,” Journal of Applied Physics 105 (2009) 07E101-1 – 07E101-3.

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399. W. Guo, M.B. Katz, C.T. Nelson, T. Heeg, D.G. Schlom, B. Liu, Y. Che, and X.Q. Pan, “Epitaxial ZnO Films on (111) Si Substrates with Sc₂O₃ Buffer Layers,” Applied Physics Letters 94 (2009) 122107-1 – 122107-3.
400. N.D. Orloff, W. Tian, C.J. Fennie, C.H. Lee, D. Gu, J. Mateu, X.X. Xi, K.M. Rabe, D.G. Schlom, I. Takeuchi, and J.C. Booth, “Broadband Dielectric Spectroscopy of Ruddlesden-Popper Sr_n+1Ti_nO_3n+1 (n = 1, 2, 3) Thin Films,” Applied Physics Letters 94 (2009) 042908-1 – 042908-3.

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401. S. Wang, A. Venimadhav, S.M. Guo, K. Chen, Q. Li, A. Soukiassian, D.G. Schlom, M.B. Katz, X.Q. Pan, W. Wong-Ng, M.D. Vaudin, and X.X. Xi, “Structural and Thermoelectric Properties of Bi₂Sr₂Co₂O_y Thin Films on LaAlO₃ (100) and Fused Silica Substrates,” Applied Physics Letters 94 (2009) 022110-1 – 022110-3.

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402. H.Z. Ma, J. Levy, M.D. Biegalski, S. Trolier-McKinstry, and D.G. Schlom, “Room-Temperature Electro-Optic Properties of Strained SrTiO₃ Films Grown on DyScO₃,” Journal of Applied Physics 105 (2009) 014102-1 – 014102-6.

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403. D.G. Schlom and C.H. Ahn, “Materials Science:  Clear Leap for Superconductors,” Nature 456 (2008) 582-583.
404. M.D. Biegalski, D.D. Fong, J.A. Eastman, P.H. Fuoss, S.K. Streiffer, T. Heeg, J. Schubert, W. Tian, C.T. Nelson, X.Q. Pan, M.E. Hawley, M. Bernhagen, P. Reiche, R. Uecker, S. Trolier-McKinstry, and D.G. Schlom, “Critical Thickness of High Structural Quality SrTiO₃ Films Grown on Orthorhombic (101) DyScO₃,” Journal of Applied Physics 104 (2008) 114109-1 – 114109-11.

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405. Y.L. Li, S.Y. Hu, S. Choudhury, M.I. Baskes, A. Saxena, T. Lookman, Q.X. Jia, D.G. Schlom, and L.Q. Chen, “Influence of Interfacial Dislocations on Hysteresis Loops of Ferroelectric Films,” Journal of Applied Physics 104 (2008) 1041101 – 1041101-6.

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406. V.V. Afanas’ev, M. Badylevich, A. Stesmans, A. Laha, H.J. Osten, A. Fissel, W. Tian, L.F. Edge, and D.G. Schlom, “Band Offsets between Si and Epitaxial Rare Earth Sesquioxides (RE₂O₃, RE=La, Nd, Gd, Lu):  Effect of 4f-Shell Occupancy,” Applied Physics Letters 93 (2008) 192105-1 – 192105-3.

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407. A. Bruchhausen, A. Fainstein, A. Soukiassian, D.G. Schlom, X.X. Xi, M. Bernhagen, P. Reiche, and R. Uecker, “Ferroelectricity-Induced Coupling between Light and Terahertz-Frequency Acoustic Phonons in BaTiO₃/SrTiO₃ Superlattices,” Physical Review Letters 101 (2008) 197402-1 – 197402-4.

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408. 

     R. Ramesh and D.G. Schlom, “Whither Oxide Electronics,” MRS Bulletin 33 (2008) 1006-1011.
409. D.G. Schlom, S. Guha, and S. Datta, “Gate Oxides Beyond SiO₂,” MRS Bulletin 33 (2008) 1017-1025.
410. M.E. Zvanut, S. Jeddy, E. Towett, G.M. Janowski, C. Brooks, and D.G. Schlom, “An Annealing study of an Oxygen Vacancy Related Defect in SrTiO₃ Substrates,” Journal of Applied Physics 104 (2008) 064122-1 – 064122-5.

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411. S.B. Mi, C.L. Jia, V. Vaithyanathan, L. Houben, J. Schubert, D.G. Schlom, and K. Urban, “Atomic Structure of the Interface between SrTiO₃ Thin Films and Si(001) Substrates,” Applied Physics Letters 93 (2008) 101913-1 – 101913-3.

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412. A. Stesmans, P. Somers, V.V. Afanas’ev, W. Tian, L.F. Edge, and D.G. Schlom, “Misfit Point Defects at the Epitaxial Lu₂O₃/(111)Si Interface Revealed by Electron Spin Resonance,” Applied Physics Letters 93 (2008) 103505-1 – 103505-3.

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413. R.W. Ulbricht, A. Schmehl, T. Heeg, J. Schubert, and D.G. Schlom, “Adsorption-Controlled Growth of EuO by Molecular-Beam Epitaxy,” Applied Physics Letters 93 (2008) 102105-1 – 102105-3.

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414. H.W. Jang, S.H. Baek, D. Ortiz, C.M. Folkman, R.R. Das, Y.H. Chu, P. Shafer, J.X. Zhang, S. Choudhury, V. Vaithyanathan, Y.B. Chen, D.A. Felker, M.D. Biegalski, M.S. Rzchowski, X.Q. Pan, D.G. Schlom, L.Q. Chen, R. Ramesh, and C.B. Eom, “Strain-Induced Polarization Rotation in Epitaxial (001) BiFeO₃ Thin Films,” Physical Review Letters 101 (2008) 107602-1 – 107602-4.

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415. E. Durğun Özben, J.M.J. Lopes, M. Roeckerath, S. Lenk, B. Holländer, Y. Jia, D.G. Schlom, J. Schubert, and S. Mantl, “SmScO₃ Thin Films as an Alternative Gate Dielectric,” Applied Physics Letters 93 (2008) 052902-1 – 052902-3.

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416. 

     D.G. Schlom, L.Q. Chen, X.Q. Pan, A. Schmehl, and M.A. Zurbuchen, “A Thin Film Approach to Engineering Functionality into Oxides,” Journal of the American Ceramic Society 91 (2008) 2429-2454.
417. S.F. Wang, K. Chen, C.-H. Lee, A. Soukiassian, D.R. Lamborn, R. DeFrain, J.M. Redwing, Q. Li, D.G. Schlom, X.X. Xi, “High Quality MgB₂ Thick Films and Large-Area Films Fabricated by Hybrid Physical-Chemical Vapor Deposition with Pocket Heater,” Superconductor Science and Technology 21 (2008) 085019-1 – 085019-5.

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418. S. Koveshnikov, C. Adamo, V. Tokranov, M. Yakimov, R. Kambhampati, M. Warusawithana, D.G. Schlom, W. Tsai, and S. Oktyabrsky, “Thermal Stability of Electrical and Structural Properties of GaAs-based Metal-Oxide-Semiconductor Capacitors with an Amorphous LaAlO₃ Gate Oxide,” Applied Physics Letters 93 (2008) 012903-1 – 012903-3.

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419. J. Zhang, S. Walsh, C. Brooks, D.G. Schlom, and L.J. Brillson, “Depth-Resolved Cathodoluminescence Spectroscopy Study of Defects in SrTiO₃,” Journal of Vacuum Science and Technology B 26 (2008) 1466-1471.

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420. S. Denev, A. Kumar, M.D. Biegalski, H.W. Jang, C.M. Folkman, A. Vasudevarao, Y. Han, I.M. Reaney, S. Trolier-McKinstry, C.B. Eom, D.G. Schlom, V. Gopalan, “Magnetic Color Symmetry of Lattice Rotations in Diamagnetic Material,” Physical Review Letters 100 (2008) 257601-1 – 257601-4.

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421. A. Vasudevarao, S. Denev, M.D. Biegalski, Y.L. Li, L.Q. Chen, S. Trolier-McKinstry, D.G. Schlom, and V. Gopalan, “Polarization Rotation Transitions in Anisotropically Strained SrTiO₃ Thin Films,” Applied Physics Letters 92 (2008) 192902-1 – 192902-3; A. Vasudevarao, S. Denev, M.D. Biegalski, Y.L. Li, L.Q. Chen, S. Trolier-McKinstry, D.G. Schlom, and V. Gopalan, “Erratum:  ‘Polarization Rotation Transitions in Anisotropically Strained SrTiO₃ Thin Films,’ [Appl. Phys. Lett. 92, 192902 (2008)],” Applied Physics Letters 94 (2009) 109901-1.

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422. R. Uecker, B. Velickov, D. Klimm, R. Bertram, M. Bernhagen, M. Rabe, M. Albrecht, R. Fornari, and D.G. Schlom, “Properties of Rare-Earth Scandate Single Crystals (Re = Nd—Dy),” Journal of Crystal Growth 310 (2008) 2649-2658.
423. A. Soukiassian, W. Tian, V. Vaithyanathan, J.H. Haeni, L.Q. Chen, X.X. Xi, D.G. Schlom, D.A. Tenne, H.P. Sun, X.Q. Pan, K.J. Choi, C.B. Eom, Y.L. Li, Q.X. Jia, C. Constantin, R.M. Feenstra, M. Bernhagen, P. Reiche, and R. Uecker, “Growth of Nanoscale BaTiO₃/SrTiO₃ Superlattices by Molecular-Beam Epitaxy,” Journal of Materials Research 23 (2008) 1417-1432.
424. Y. Yacoby, C. Brooks, D.G. Schlom, J.O. Cross, D.A. Walko, C.N. Cionca, N.S. Husseini, A. Riposan, and R. Clarke, “Structural Changes Induced by Metal Electrode Layers on Ultrathin BaTiO₃ Films,” Physical Review B 77 (2008) 195426-1 – 195426-7.

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425. J.F. Ihlefeld, N.J. Podraza, Z.K. Liu, R.C. Rai, X. Xu, T. Heeg, Y.B. Chen, J. Li, R.W. Collins, J.L. Musfeldt, X.Q. Pan, J. Schubert, R. Ramesh, and D.G. Schlom, “Optical Band Gap of BiFeO₃ Grown by Molecular-Beam Epitaxy,” Applied Physics Letters 92 (2008) 142908-1 – 142908-3.

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426. C. Yu, M.J. Pechan, S. Srivastava, C.J. Palmstrøm, M.D. Biegalski, C. Brooks, and D.G. Schlom, “Ferromagnetic Resonance in Ferromagnetic/Ferroelectric Fe/BaTiO₃/SrTiO₃(001),” Journal of Applied Physics 103 (2008) 07B108-1 – 07B108-3.

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427. M. Hanna, S. Wang, A.D. Eck, R.H.T. Wilke, K. Chen, A. Soukiassian, C-H. Lee, W.Q. Dai, Q. Li, J.M. Redwing, D.G. Schlom, X.X. Xi, and K. Salama, “Clean Epitaxial MgB₂ Films Fabricated by the Ex Situ Annealing of Chemical Vaopur Deposition-Grown B Films in Mg Vapor,” Superconductor Science and Technology, 21 (2008) 045005-1 – 045005-4.

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428. A. Kumar, R.C. Rai, N.J. Podraza, S. Denev, M. Ramirez, Y-H. Chu, L.W. Martin, J. Ihlefeld, T. Heeg, J. Schubert, D.G. Schlom, J. Orenstein, R. Ramesh, R.W. Collins, J.L. Musfeldt, and V. Gopalan, “Linear and Nonlinear Optical Properties of BiFeO₃,” Applied Physics Letters 92 (2008) 121915-1 – 121915-3.

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429. C. Adamo, X. Ke, P. Schiffer, A. Soukiassian, M. Warusawithana, L. Maritato, and D.G. Schlom, “Electrical and Magnetic Properties of (SrMnO₃)_n/(LaMnO₃)_2n Superlattices,” Applied Physics Letters 92 (2008) 112508-1 – 112508-3.

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430. K.A. Pestka II, J.D. Maynard, A. Soukiassian, X.X. Xi, D.G. Schlom, Y. Le Page, M. Bernhagen, P. Reiche, and R. Uecker, “Experimental Measurement of the Elastic Constants of GdScO₃ via Resonant Ultrasound Spectroscopy Utilizing Ab Initio Calculations,” Applied Physics Letters 92 (2008) 111915-1 – 111915-3.

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431. S. Mühlbauer, P. Böni, R. Georgii, A. Schmehl, D.G. Schlom, and J. Mannhart, “Field and Temperature Dependence of the Magnetization in Ferromagnetic EuO Thin Films,” Journal of Physics:  Condensed Matter 20 (2008) 104230-1 – 104230-4.

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432. Y.H. Chu, Q. Zhan, C‑H. Yang, M.P. Cruz, L.W. Martin, T. Zhao, P. Yu, R. Ramesh, P.T. Joseph, I.N. Lin, W. Tian, and D.G. Schlom, “Low Voltage Performance of Epitaxial BiFeO₃ Films on Si Substrates through Lanthanum Substitution,” Applied Physics Letters 92 (2008) 102909-1 – 102909-3.

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433. J. Schubert, O. Trithaveesak, W. Zander, M. Roeckerath, T. Heeg, H.Y. Chen, C.L. Jia, P. Meuffels, Y. Jia, and D.G. Schlom, “Characterization of Epitaxial Lanthanum Lutetium Oxide Thin Films Prepared by Pulsed-Laser Deposition,” Applied Physics A 90 (2008) 577-579.

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434. W. Guo, A. Allenic, Y.B. Chen, X.Q. Pan, W. Tian, C. Adamo, and D.G. Schlom, “ZnO Epitaxy on (111) Si using Epitaxial Lu₂O₃ Buffer Layers,” Applied Physics Letters 92 (2008) 072101-1 – 072101-3.
435. G. van der Laan, E. Arenholz, A. Schmehl, and D.G. Schlom, “Weak Anisotropic X-Ray Magnetic Linear Dichroism at the Eu M_4,5 Edges of Ferromagnetic EuO(001): Evidence for 4f-State Contributions,” Physical Review Letters 100 (2008) 067403-1 – 067403-4.

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436. H.W. Jang, S.H. Baek, D. Ortiz, C.M. Folkman, C.B. Eom, Y.H. Chu, P. Shafer, R. Ramesh, V. Vaithyanathan, and D.G. Schlom, “Epitaxial (001) BiFeO₃ Membranes with Substantially Reduced Fatigue and Leakage,” Applied Physics Letters 92 (2008) 062910-1 – 062910-3.

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437. L.F. Kourkoutis, C.S. Hellberg, V. Vaithyanathan, H. Li, M.K. Parker, K.E. Andersen, D.G. Schlom, and D.A. Muller, “Imaging the Phase Separation in Atomically Thin Buried SrTiO₃ Layers by Electron Channeling,” Physical Review Letters 100 (2008) 036101-1 – 036101-4.

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438. B. Strukov, S. Davitadze, V. Lemanov, S. Shulman, Y. Uesu, S. Asanuma, D. Schlom, and A. Soukiassian, “Phase Transitions in Ferroelectric Thin Films and Superlattices: Thermophysical Approach,” Ferroelectrics 370 (2008) 57-64. 
439. Y.L. Li, S.Y. Hu, D. Tenne, A. Soukiassian, D.G. Schlom, L.Q. Chen, X.X. Xi, K.J. Choi, C.B. Eom, A. Saxena, T. Lookman, and Q.X. Jia, “Interfacial Coherency and Ferroelectricity of BaTiO₃/SrTiO₃ Superlattice Films,” Applied Physics Letters 91 (2007) 252904-1 – 252904-3.

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440. A. Schmehl, V. Vaithyanathan, A. Herrnberger, S. Thiel, C. Richter, M. Liberati, T. Heeg, M. Röckerath, L.F. Kourkoutis, S. Mühlbauer, P. Böni, D.A. Muller, Y. Barash, J. Schubert, Y. Idzerda, J. Mannhart, and D.G. Schlom, “Epitaxial Integration of the Highly Spin-Polarized Ferromagnetic Semiconductor EuO with Silicon and GaN,” Nature Materials 6 (2007) 882-887.
441. L.W. Martin, Y.-H. Chu, Q. Zhan, R. Ramesh, S.-J. Han, S.X. Wang, M. Warusawithana, and D.G. Schlom, “Room Temperature Exchange Bias and Spin Valves Based on BiFeO₃/SrRuO₃/SrTiO₃/Si (001) Heterostructures,” Applied Physics Letters 91 (2007) 172513-1 – 172513-3.

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442. N. Goel, W. Tsai, C.M. Garner, Y. Sun, P. Pianetta, M. Warusawithana, D.G. Schlom, H. Wen, C. Gaspe, J.C. Keay, M.B. Santos, L.V. Goncharova, E. Garfunkel, and T. Gustafsson, “Band Offsets between Amorphous LaAlO₃ and In_0.53Ga_0.47As,” Applied Physics Letters 91 (2007) 113515-1 – 113515-3.

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443. Y.L. Li, S.Y. Hu, D. Tenne, A. Soukiassian, D.G. Schlom, X.X. Xi, K.J. Choi, C.B. Eom, A. Saxena, T. Lookman, Q.X. Jia, and L.Q. Chen, “Prediction of Ferroelectricity in BaTiO₃/SrTiO₃ Superlattices with Domains,” Applied Physics Letters 91 (2007) 112914-1 – 112914-3.

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444. J.M.J. Lopes, M. Roeckerath, T. Heeg, U. Littmark, J. Schubert, S. Mantl, Y. Jia, and D.G. Schlom, “La-Based Ternary Rare-Earth Oxides as Alternative High-k Dielectrics,” Microelectronic Engineering 84 (2007) 1890-1893.

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445. V.V. Afanas’ev, S. Shamuilia, M. Badylevich, A. Stesmans, L.F. Edge, W. Tian, D.G. Schlom, J.M.J. Lopes, M. Roeckerath, and J. Schubert, “Electronic Structure of Silicon Interfaces with Amorphous and Epitaxial Insulating Oxides:  Sc₂O₃, Lu₂O₃, LaLuO₃,” Microelectronic Engineering 84 (2007) 2278-2281.

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446. N. Goel, P. Majhi, W. Tsai, M. Warusawithana, D.G. Schlom, M.B. Santos, J.S. Harris, and Y. Nishi, “High-Indium-Content InGaAs Metal-Oxide-Semiconductor Capacitor with Amorphous LaAlO₃ Gate Dielectric,” Applied Physics Letters 91 (2007) 093509-1 – 093509-3.

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447. J.F. Ihlefeld, A. Kumar, V. Gopalan, D.G. Schlom, Y.B. Chen, X.Q. Pan, T. Heeg, J. Schubert, X. Ke, P. Schiffer, J. Orenstein, L.W. Martin, Y.H. Chu, and R. Ramesh, “Adsorption-Controlled Molecular-Beam Epitaxial Growth of BiFeO₃,” Applied Physics Letters 91 (2007) 071922-1 – 071922-3.

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448. S. Gsell, M. Fischer, R. Brescia, M. Schreck, P. Huber, F. Bayer, B. Stritzker, and D.G. Schlom, “Reduction of Mosaic Spread using Iridium Interlayers:  A Route to Improved Oxide Heteroepitaxy on Silicon,” Applied Physics Letters 91 (2007) 061501-1 – 061501-3.

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449. K. Clémer, A. Stesmans, V.V. Afanas’ev, L.F. Edge, and D.G. Schlom, “Paramagnetic Point Defects in (100) Si/LaAlO₃ Structures:  Nature and Stability of the Interface,” Journal of Applied Physics 102 (2007) 034516-1 – 034516-7.

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450. W. Cai, S.E. Stone, J.P. Pelz, L.F. Edge, and D.G. Schlom, “Conduction Band Energies and Hot-Electron Transport Characteristics of Epitaxial Sc₂O₃/Si (111) Studied by Ballistic Electron Emission Microscopy and Internal Photoemission,” Applied Physics Letters 91 (2007) 042901-1 – 042901-3.

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451. M.A. Zurbuchen, R.S. Freitas, M.J. Wilson, P. Schiffer, M. Roeckerath, J. Schubert, M.D. Biegalski, G.H. Mehta, D.J. Comstock, J.H. Lee, Y. Jia, and D.G. Schlom, “Synthesis and Characterization of an n = 6 Aurivillius Phase Incorporating Magnetically Active Manganese, Bi₇(Mn,Ti)₆O₂₁,” Applied Physics Letters 91 (2007) 033113-1 – 033113-3.

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452. S.Y. Yang, Q. Zhan, P.L. Yang, M.P. Cruz, Y.H. Chu, R. Ramesh, Y.R. Wu, J. Singh, W. Tian, and D.G. Schlom, “Capacitance-Voltage Characteristics of BiFeO₃/SrTiO₃/GaN Heteroepitaxial Structures,” Applied Physics Letters 91 (2007) 022909-1 – 022909-3.

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453. K. Clémer, A. Stesmans, V.V. Afanas’ev, L.F. Edge, and D.G. Schlom, “Analysis of the (100)Si/LaAlO₃ Structure by Electron Spin Resonance:  Nature of the Interface,” Journal of Materials Science:  Materials in Electronics 18 (2007) 735-741.

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454. P. Orgiani, C. Adamo, C. Barone, A. Galdi, A.Y. Petrov, D.G. Schlom, and L. Maritato, “Influence of a Single Disorder Parameter on the Conduction Mechanisms in Manganite Thin Films,” Physical Review B 76 (2007) 012404-1 – 012404-3.

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455. D.A. Tenne, I.E. Gonenli, A. Soukiassian, D.G. Schlom, S.M. Nakhmanson, K.M. Rabe, and X.X. Xi, “Raman Study of Oxygen Reduced and Re-Oxidized Strontium Titanate,” Physical Review B 76 (2007) 024303-1 – 024303-7.

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456. D.H. Choi, J.S. Harris, M. Warusawithana, and D.G. Schlom, “Annealing Condition Optimization and Electrical Characterization of Amorphous LaAlO₃/GaAs Metal-Oxide-Semiconductor Capacitors,” Applied Physics Letters 90 (2007) 243505-1 – 243505-3.

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457. A.V. Pogrebnyakov, E. Maertz, R.H.T. Wilke, Q. Li, A. Soukiassian, D.G. Schlom, J.M. Redwing, A. Findikoglu, and X.X. Xi, “Polycrystalline MgB₂ Films on Flexible YSZ Substrates Grown by Hybrid Physical-Chemical Vapor Deposition,” IEEE Transactions on Applied Superconductivity 17 (2007) 2854-2857.

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458. M.A. Zurbuchen, W. Tian, X.Q. Pan, D. Fong, S.K. Streiffer, M.E. Hawley, J. Lettieri, Y. Jia, G. Asayama, S.J. Fulk, D.J. Comstock, S. Knapp, A.H. Carim, and D.G. Schlom, “Morphology, Structure, and Nucleation of Out-of-Phase Boundaries (OPBs) in Epitaxial Films of Layered Oxides,” Journal of Materials Research 22 (2007) 1439-1471.
459. X.X. Xi, A.V. Pogrebnyakov, S.Y. Xu, K. Chen, Y. Cui, E.C. Maertz, C.G. Zhuang, Q. Li, D.R. Lamborn, J.M. Redwing, Z.K. Liu, A. Soukiassian, D.G. Schlom, X.J. Weng, E.C. Dickey, Y.B. Chen, W. Tian, X.Q. Pan, S.A. Cybart, and R.C. Dynes, “MgB₂ Thin Films by Hybrid Physical-Chemical Vapor Deposition,” Physica C 456 (2007) 22-37.

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460. T. Heeg, M. Roeckerath, J. Schubert, W. Zander, C. Buchal, H.Y. Chen, C.L. Jia, Y. Jia, C. Adamo, and D.G. Schlom, “Epitaxially Stabilized Growth of Orthorhombic LuScO₃ Thin Films,” Applied Physics Letters 90 (2007) 192901-1 – 192901-3.

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461. W. Tian, V. Vaithyanathan, D.G. Schlom, Q. Zhan, S.Y. Yang, Y.H. Chu, and R. Ramesh, “Epitaxial Integration of (0001) BiFeO₃ with (0001) GaN,” Applied Physics Letters 90 (2007) 172908-1 – 172908-3.

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462. M. Wang, W. He, T.P. Ma, L.F. Edge, and D.G. Schlom, “Electron Tunneling Spectroscopy Study of Amorphous Films of the Gate Dielectric Candidates LaAlO₃ and LaScO₃,” Applied Physics Letters 90 (2007) 053502-1 – 053502-3.

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463. J.X. Zhang, Y.L. Li, D.G. Schlom, L.Q. Chen, F. Zavaliche, R. Ramesh, and Q.X. Jia, “Phase-field Model for Epitaxial Ferroelectric and Magnetic Nanocomposite Thin Films,” Applied Physics Letters 90 (2007) 052909-1 – 052909-3.

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464. A. Soukiassian, W. Tian, D.A. Tenne, X.X. Xi, D.G. Schlom, N.D. Lanzillotti-Kimura, A. Bruchhausen, A. Fainstein, H.P. Sun, X.Q. Pan, A. Cros, and A. Cantarero, “Acoustic Bragg Mirrors and Cavities Made using Piezoelectric Oxides,” Applied Physics Letters 90 (2007) 042909-1 – 042909-3.

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465. W. Tian, J.H. Haeni, D.G. Schlom, E. Hutchinson, B.L. Sheu, M.M. Rosario, P. Schiffer, Y. Liu, M.A. Zurbuchen, and X.Q. Pan, “Epitaxial Growth and Magnetic Properties of the First Five Members of the Layered Sr_n+1Ru_nO_3n+1 Oxide Series,” Applied Physics Letters 90 (2007) 022507-1 – 022507-3.

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466. D.G. Schlom, L.Q. Chen, C.B. Eom, K.M. Rabe, S.K. Streiffer, and J.-M. Triscone, “Strain Tuning of Ferroelectric Thin Films,” Annual Review of Materials Research 37 (2007) 589-626.
467. A. Vasudevarao, A. Kumar, L. Tian, J.H. Haeni, Y.L. Li, C.J. Eklund, Q.X. Jia, R. Uecker, P. Reiche, K.M. Rabe, L.Q. Chen, D.G. Schlom, and V. Gopalan, “Multiferroic Domain Dynamics in Strained Strontium Titanate,” Physical Review Letters 97 (2006) 257602-1 – 257604-2.

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468. P. Sivasubramani, T.H. Lee, M.J. Kim, J. Kim, B.E. Gnade, R.M. Wallace, L.F. Edge, D.G. Schlom, F.A. Stevie, R. Garcia, Z. Zhu, and D.P. Griffis, “Thermal Stability of Lanthanum Scandate Dielectrics on Si(100),” Applied Physics Letters 89 (2006) 242907-1 – 242907-3.

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469. J.M.J. Lopes, M. Roeckerath, T. Heeg, E. Rije, J. Schubert, S. Mantl, V.V. Afanas’ev, S. Shamuilia, A. Stesmans, Y. Jia, and D.G. Schlom, “Amorphous Lanthanum Lutetium Oxide Thin Films as an Alternative High-k Gate Dielectric,” Applied Physics Letters 89 (2006) 222902-1 – 222902-3.

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470. L.F. Edge, D.G. Schlom, S. Stemmer, G. Lucovsky, and J. Luning, “Detection of Nanocrystallinity by X-Ray Absorption Spectroscopy in Thin Film Transition Metal/Rare-Earth Atom, Elemental and Complex Oxides,” Radiation Physics and Chemistry 75 (2006) 1608–1612.

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471. R. Uecker, H. Wilke, D.G. Schlom, B. Velickov, P. Reiche, A. Polity, M. Bernhagen, and M. Rossberg, “Spiral Formation during Czochralski Growth of Rare-Earth Scandates,” Journal of Crystal Growth 295 (2006) 84-91.
472. D.A. Tenne, A. Bruchhausen, N.D. Lanzillotti-Kimura, A. Fainstein, R.S. Katiyar, A. Cantarero, A. Soukiassian, V. Vaithyanathan, J.H. Haeni, W. Tian, D.G. Schlom, K.J. Choi, D.M. Kim, C.B. Eom, H.P. Sun, X.Q. Pan, Y.L. Li, L.Q. Chen, Q.X. Jia, S.M. Nakhmanson, K.M. Rabe, and X.X. Xi, “Probing Nanoscale Ferroelectricity by Ultraviolet Raman Spectroscopy,” Science 313 (2006) 1614-1616.
473. A. Stesmans, K. Clémer, V.V. Afanas’ev, L.F. Edge, and D.G. Schlom, “Nature and Stability of the (100)Si/LaAlO₃ Interface Probed by Paramagnetic Defects,” Applied Physics Letters 89 (2006) 112121-1 – 112121-3.

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474. Y.-H. Chu, Q. Zhan, L.W. Martin, M.P. Cruz, P.-L. Yang, G.W. Pabst, F. Zavaliche, S.-Y. Yang, J.-X. Zhang, L.Q. Chen, D.G. Schlom, I.-N. Lin, T.-B. Wu, and R. Ramesh, “Nanoscale Domain Control in Multiferroic BiFeO₃ Thin Films,” Advanced Materials 18 (2006) 2307-2311.

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475. V.V. Afanas’ev, A. Stesmans, R. Droopad, M. Passlack, L.F. Edge, and D.G. Schlom, “Electron Energy Barriers at Interfaces of GaAs(100) with LaAlO₃ and Gd₂O₃,” Applied Physics Letters 89 (2006) 092103-1 – 092103-3.

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476. W. Tian, J.C. Jiang, X.Q. Pan, J.H. Haeni, Y.L. Li, L.Q. Chen, D.G. Schlom, J.B. Neaton, K.M. Rabe, and Q.X. Jia, “Structural Evidence for Enhanced Polarization in a Commensurate Short-Period BaTiO₃ / SrTiO₃ Superlattice,” Applied Physics Letters 89 (2006) 092905-1 – 092905-3.

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477. L.F. Edge, D.G. Schlom, S. Rivillon, Y.J. Chabal, M.P. Agustin, S. Stemmer, T. Lee, M.J. Kim, H.S. Craft, J.-P. Maria, M.E. Hawley, B. Holländer, J. Schubert, and K. Eisenbeiser, “Thermal Stability of Amorphous LaScO₃ Films on Silicon,” Applied Physics Letters 89 (2006) 062902-1 – 062902-3.
478. V. Vaithyanathan, J. Lettieri, W. Tian, A. Kochhar, H. Ma, A. Sharan, A. Vasudevarao, V. Gopalan, Y. Li, L.Q. Chen, P. Zschack, J.C. Woicik, J. Levy, and D.G. Schlom, “c-Axis Oriented Epitaxial BaTiO₃ Films on (001) Si,” Journal of Applied Physics 100 (2006) 024108-1 – 024108-9.

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479. A. Petraru, V. Nagarajan, H. Kohlstedt, R. Ramesh, D.G. Schlom, and R. Waser, “Simultaneous Measurement of the Piezoelectric and Dielectric Response of Nanoscale Ferroelectric Capacitors by an Atomic Force Microscopy Based Approach,” Applied Physics A 84 (2006) 67-71.

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480. L.V. Goncharova, D.G. Starodub, E. Garfunkel, T. Gustafsson, V. Vaithyanathan, J. Lettieri, and D.G. Schlom, “Interface Structure and Thermal Stability of Epitaxial SrTiO₃ Thin Films on Si (001),” Journal of Applied Physics 100 (2006) 014912-1 – 014912-6.
481. H.M. Christen, G.E. Jellison, Jr., I. Ohkubo, S. Huang, M.E. Reeves, E. Cicerrella, J.L. Freeouf, Y. Jia, and D.G. Schlom, “Dielectric and Optical Properties of Epitaxial Rare-Earth Scandate Films and their Crystallization Behavior,” Applied Physics Letters 88 (2006) 262906-1 – 262906-3.

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482. E.M. Campo, S. Nakahara, T. Hierl, J.C.M. Hwang, Y.P. Chen, G. Brill, N.K. Dhar, V. Vaithyanathan, D.G. Schlom, X.-M. Fang, and J.M. Fastenau, “Epitaxial Growth of CdTe on Si through Perovskite Oxide Buffers,” Journal of Electronic Materials 35 (2006) 1219-1223.
483. M.D. Biegalski, Y. Jia, D.G. Schlom, S. Trolier-McKinstry, S.K. Streiffer, V. Sherman, R. Uecker, and P. Reiche, “Relaxor Ferroelectricity in Strained Epitaxial SrTiO₃ Thin Films on DyScO₃ Substrates,” Applied Physics Letters 88 (2006) 192907-1 – 192907-3.
484. Y.L. Li, S. Choudhury, J.H. Haeni, M.D. Biegalski, A. Vasudevarao, A. Sharan, H.Z. Ma, J. Levy, V. Gopalan, S. Trolier-McKinstry, D.G. Schlom, Q.X. Jia, and L.Q. Chen, “Phase Transitions and Domain Structures in Strained Pseudocubic (100) SrTiO₃ Thin Films,” Physical Review B 73 (2006) 184112-1 – 184112-13.

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485. D.M. Kim, C.B. Eom, V. Nagarajan, J. Ouyang, R. Ramesh, V. Vaithyanathan, and D.G. Schlom, “Thickness Dependence of Structural and Piezoelectric Properties of Epitaxial Pb(Zr_0.52Ti_0.48)O₃ Films on Si and SrTiO₃ Substrates,” Applied Physics Letters 88 (2006) 142904-1 – 142904-3.

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486. T. Heeg, J. Schubert, C. Buchal, E. Cicerrella, J.L. Freeouf, W. Tian, Y. Jia, and D.G. Schlom, “Growth and Properties of Epitaxial Rare-Earth Scandate Thin Films,” Applied Physics A 83 (2006) 103-106.

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487. L.F. Edge, D.G. Schlom, P. Sivasubramani, R.M. Wallace, B. Holländer, and J. Schubert, “Electrical Characterization of Amorphous Lanthanum Aluminate Thin Films Grown by Molecular-Beam Deposition on Silicon,” Applied Physics Letters 88 (2006) 112907-1 – 112907-3.

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488. P. Irvin, J. Levy, J.H. Haeni, and D.G. Schlom, “Localized Microwave Resonances in Strained SrTiO₃ Thin Films,” Applied Physics Letters 88 (2006) 042902-1 – 042902-3.

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489. V.V. Afanas’ev, A. Stesmans, L.F. Edge, D.G. Schlom, T. Heeg, and J. Schubert, “Band Alignment between (100) Si and Amorphous LaAlO₃, LaScO₃, and Sc₂O₃:  Atomically Abrupt versus Interlayer-Containing Interfaces,” Applied Physics Letters 88 (2006) 032104-1 – 032104-3.

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490. E. Cicerrella, J.L. Freeouf, L.F. Edge, D.G. Schlom, T. Heeg, J. Schubert, and S.A. Chambers, “Optical Properties of La-Based High-K Dielectric Films,” Journal of Vacuum Science and Technology A 23 (2005) 1676-1680.

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491. O. Guise, J.T. Yates, Jr., J. Levy, J. Ahner, V. Vaithyanathan, and D.G. Schlom, “Patterning of Sub-10-nm Ge Islands on Si(100) by Directed Self-Assembly,” Applied Physics Letters 87 (2005) 171902-1 – 171902-3.

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492. A. Venimadhav, A. Soukiassian, D.A. Tenne, Q. Li, X.X. Xi, D.G. Schlom, R. Arroyave, Z.K. Liu, H.P. Sun, X.Q. Pan, M.Y. Lee, and N.P. Ong, “Structural and Transport Properties of Epitaxial Na_xCoO₂ Thin Films,” Applied Physics Letters 87 (2005) 172104-1 – 172104-3.

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493. S.Y. Yang, F. Zavaliche, L. Mohaddes-Ardabili, V. Vaithyanathan, D.G. Schlom, Y.J. Lee, Y.H. Chu, M.P. Cruz, Q. Zhan, T. Zhao, and R. Ramesh, “Metalorganic Chemical Vapor Deposition of Lead-Free Ferroelectric BiFeO₃ Films for Memory Applications,” Applied Physics Letters 87 (2005) 102903-1 – 102903-3.

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494. F. Zavaliche, H. Zheng, L. Mohaddes-Ardabili, S.Y. Yang, Q. Zhan, P. Shafer, E. Reilly, R. Chopdekar, Y. Jia, P. Wright, D.G. Schlom, Y. Suzuki, and R. Ramesh, “Electric Field-Induced Magnetization Switching in Epitaxial Columnar Nanostructures,” Nano Letters 5 (2005) 1793-1796.
495. G. Lucovsky, C.C. Fulton, Y. Zhang, J. Luning, L.F. Edge, J.L. Whitten, R.J. Nemanich, D.G. Schlom, and V.V. Afanas’ev, “Conduction Band-Edge d-State in High-k Dielectrics due to Jahn–Teller Term Splittings,” Thin Solid Films 486 (2005) 129-135.
496. Z. Ma, F. Zavaliche, L. Chen, J. Ouyang, J. Melngailis, A.L. Roytburd, V. Vaithyanathan, D.G. Schlom, T. Zhao, and R. Ramesh, “Effect of 90° Domain Movement on the Piezoelectric Response of Patterned PbZr_0.2Ti_0.8O₃/SrTiO₃/Si Heterostructures,” Applied Physics Letters 87 (2005) 072907-1 – 072907-3.

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497. W. Chang, S.W. Kirchoefer, J.A. Bellotti, S.B. Qadri, J.M. Pond, J.H. Haeni, and D.G. Schlom, “In-Plane Anisotropy in the Microwave Dielectric Properties of SrTiO₃ Films,” Journal of Applied Physics 98 (2005) 024107-1 – 024107-7.

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498. J. Mannhart and D.G. Schlom, “Oxide—Tausendsassa für die Elektronik,” Physik Journal 4 (2005) 45-51. 
499. P. Orgiani, Y. Cui, A.V. Pogrebnyakov, J.M. Redwing, V. Vaithyanathan, D.G. Schlom, and X.X. Xi, “Investigations of MgB₂ / MgO and MgB₂ / AlN Heterostructures for Josephson Devices,” IEEE Transactions on Applied Superconductivity 15 (2005) 228-231.
500. B.T. Liu, X.X. Xi, V. Vaithyanathan, and D.G. Schlom, “MgB₂ Thin Films Grown at Different Temperatures by Hybrid Physical-Chemical Vapor Deposition,” IEEE Transactions on Applied Superconductivity 15 (2005) 3249-3252.
501. A.V. Pogrebnyakov, J.M. Redwing, J.E. Giencke, C.B. Eom, V. Vaithyanathan, D.G. Schlom, A. Soukiassian, S.B. Mi, C.L. Jia, J. Chen, Y.F. Hu, Y. Cui, Q. Li, and X.X. Xi, “Carbon-Doped MgB₂ Thin Films Grown by Hybrid Physical-Chemical Vapor Deposition,” IEEE Transactions on Applied Superconductivity 15 (2005) 3321-3324.
502. P. Sivasubramani, M.J. Kim, B.E. Gnade, R.M. Wallace, L.F. Edge, D.G. Schlom, H.S. Craft, and J.-P. Maria, “Outdiffusion of La and Al from Amorphous LaAlO₃ in Direct Contact with Si (001),” Applied Physics Letters 86 (2005) 201901-1 – 201901-3.

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503. J.Q. He, C.L. Jia, V. Vaithyanathan, D.G. Schlom, J. Schubert, A. Gerber, H.H. Kohlstedt, and R.H. Wang, “Interfacial Reaction in the Growth of Epitaxial SrTiO₃ Thin Films on (001) Si Substrates,” Journal of Applied Physics 97 (2005) 104921-1 – 104921-6.

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504. G. Lucovsky, J.G. Hong, C.C. Fulton, N.A. Stoute, Y. Zou, R.J. Nemanich, D.E. Aspnes, H. Ade, and D.G. Schlom, “Conduction Band States of Transition Metal (TM) High-k Gate Dielectrics as Determined from X-ray Absorption Spectra,” Microelectronics Reliability 45 (2005) 827–830.

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505. M.D. Biegalski, J.H. Haeni, S. Trolier-McKinstry, D.G. Schlom, C.D. Brandle, and A.J. Ven Graitis, “Thermal Expansion of the New Perovskite Substrates DyScO₃ and GdScO₃,” Journal of Materials Research 20 (2005) 952-958.
506. C. Zhao, T. Witters, B. Brijs, H. Bender, O. Richard, M. Caymax, T. Heeg, J. Schubert, V.V. Afanas’ev, A. Stesmans, and D.G. Schlom, “Ternary Rare-Earth Metal Oxide High-k Layers on Silicon Oxide,” Applied Physics Letters 86 (2005) 132903-1 – 132903-3.
507. T. Bauer, S. Gsell, M. Schreck, J. Goldfuß, J. Lettieri, D.G. Schlom, and B. Stritzker, “Growth of Epitaxial Diamond on Silicon via Iridium/SrTiO₃ Buffer Layers,” Diamond & Related Materials 14 (2005) 314-317.

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508. G. Lucovsky, C.C. Fulton, Y. Zhang, Y. Zou, J. Luning, L.F. Edge, J.L. Whitten, R.J. Nemanich, H. Ade, D.G. Schlom, V.V. Afanas’ev, A. Stesmans, S. Zollner, D. Triyoso, and B.R. Rogers, “Conduction Band-Edge States Associated With the Removal of d-State Degeneracies by the Jahn–Teller Effect,” IEEE Transactions on Device and Materials Reliability 5 (2005) 65-83.
509. P.J. Hansen, V. Vaithyanathan, Y. Wu, T. Mates, S. Heikman, U.K. Mishra, R.A. York, D.G. Schlom, and J.S. Speck, “Rutile Films Grown by Molecular Beam Epitaxy on GaN and AlGaN/GaN,” Journal of Vacuum Science and Technology B 23 (2005) 499-506.

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510. D.O. Klenov, L.F. Edge, D.G. Schlom, and S. Stemmer, “Extended Defects in Epitaxial Sc₂O₃ Films Grown on (111) Si,” Applied Physics Letters 86 (2005) 051901-1 – 051901-3.
511. D.O. Klenov, D.G. Schlom, H. Li, and S. Stemmer, “The Interface between Single Crystalline (001) LaAlO₃ and (001) Silicon,” Japanese Journal of Applied Physics 44 (2005) L617-L619.

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512. G. Lucovsky, Y. Zhang, J.L. Whitten, D.G. Schlom, and J.L. Freeouf, “Near Edge X-Ray Absorption Spectroscopy:  A Novel Approach for Determining Conduction Band Edge States in Transition Metal Oxide Gate Dielectrics,” Physica Scripta 2005 (2005) 335-338.

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513. J.C. Woicik, F.S. Aguirre-Tostada, A. Herrera-Gomez, R. Droopad, Z. Yu, D.G. Schlom, E. Karapetrova, P. Zschack, and P. Pianetta, “X-Ray Absorption Fine-Structure Determination of Interfacial Polarization in SrTiO₃ Thin Films Grown on Si(001),” Physica Scripta 2005 (2005) 620-622.

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514. V.V. Afanas’ev, A. Stesmans, C. Zhao, M. Caymax, T. Heeg, J. Schubert, Y. Jia, D.G. Schlom, and G. Lucovsky, “Band Alignment between (100)Si and Complex Rare Earth/Transition Metal Oxides,” Applied Physics Letters 85 (2004) 5917-5919.
515. W. Chang, S.W. Kirchoefer, J.M. Pond, J.A. Bellotti, S.B. Qadri, J.H. Haeni, and D.G. Schlom, “Room-Temperature Tunable Microwave Properties of Strained SrTiO₃ Films,” Journal of Applied Physics 96 (2004) 6629-6633.

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516. K.J. Choi, M.D. Biegalski, Y.L. Li, A. Sharan, J. Schubert, R. Uecker, P. Reiche, Y.B. Chen, X.Q. Pan, V. Gopalan, L.-Q. Chen, D.G. Schlom, and C.B. Eom, “Enhancement of Ferroelectricity in Strained BaTiO₃ Thin Films,” Science 306 (2004) 1005-1009.
517. F.S. Aguirre-Tostado, A. Herrera-Gómez, J.C. Woicik, R. Droopad, Z. Yu, D.G. Schlom, P. Zschack, E. Karapetrova, P. Pianetta, and C.S. Hellberg, “Elastic Anomaly for SrTiO₃ Thin Films Grown on Si(001),” Physical Review B 70 (2004) 201403-1 – 201403-4.

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518. A.V. Pogrebnyakov, J.M. Redwing, S. Raghavan, V. Vaithyanathan, D.G. Schlom, S.Y. Xu, Q. Li, D.A. Tenne, A. Soukiassian, X.X. Xi, M.D. Johannes, D. Kasinathan, W.E. Pickett, J.S. Wu, and J.C.H. Spence, “Enhancement of Superconducting Transition Temperature of MgB₂ by a Strain-Induced Bond-Stretching Mode Softening,” Physical Review Letters 93 (2004) 147006-1 – 147006-4.

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519. H.P. Sun, X.Q. Pan, J.H. Haeni, and D.G. Schlom, “Structural Evolution of Dislocation Half-Loops in Epitaxial BaTiO₃ Thin Films during High-Temperature Annealing,” Applied Physics Letters 85 (2004) 1967-1969.

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520. A.V. Pogrebnyakov, X.X. Xi, J.M. Redwing, V. Vaithyanathan, D.G. Schlom, A. Soukiassian, S.B. Mi, C.L. Jia, J.E. Giencke, C.B. Eom, J. Chen, Y.F. Hu, Y. Cui, and Q. Li, “Properties of MgB₂ Thin Films with Carbon Doping,” Applied Physics Letters 85 (2004) 2017-2019; A.V. Pogrebnyakov, X.X. Xi, J.M. Redwing, V. Vaithyanathan, D.G. Schlom, A. Soukiassian, S.B. Mi, C.L. Jia, J.E. Giencke, C.B. Eom, J. Chen, Y.F. Hu, Y. Cui, and Q. Li,  “Erratum:  ‘Properties of MgB₂ Thin Films with Carbon Doping,’ [Appl. Phys. Lett. 85, 2017 (2004)],” Applied Physics Letters 88 (2006) 209903-1. 

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521. H. Zheng, J. Wang, L. Mohaddes-Ardabili, M. Wuttig, L. Salamanca-Riba, D.G. Schlom, and R. Ramesh, “Three-Dimensional Heteroepitaxy in Self-Assembled BaTiO₃-CoFe₂O₄ Nanostructures,” Applied Physics Letters 85 (2004) 2035-2037.

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522. J.H. Haeni, P. Irvin, W. Chang, R. Uecker, P. Reiche, Y.L. Li, S. Choudhury, W. Tian, M.E. Hawley, B. Craigo, A.K. Tagantsev, X.Q. Pan, S.K. Streiffer, L.Q. Chen, S.W. Kirchoefer, J. Levy, and D.G. Schlom, “Room-Temperature Ferroelectricity in Strained SrTiO₃,” Nature 430 (2004) 758-761.
523. J. Mannhart and D.G. Schlom, “Semiconductor Physics:  The Value of Seeing Nothing,” Nature 430 (2004) 620-621.
524. L. Mohaddes-Ardabili, H. Zeng, S.B. Ogale, B. Hannoyer, W. Tian, J. Wang, S.E. Lofland, S.R. Shinde, T. Zhao, Y. Jia, L. Salamanca-Riba, D.G. Schlom, M. Wuttig, and R. Ramesh, “Self-Assembled Single-Crystal Ferromagnetic Iron Nanowires formed by Decomposition,” Nature Materials 3 (2004) 533-538.
525. F.S. Aguirre-Tostado, A. Herrera-Gómez, J.C. Woicik, R. Droopad, Z. Yu, D.G. Schlom, J. Karapetrova, P. Zschack, and P. Pianetta, “Displacive Phase Transition in SrTiO₃ Thin Films Grown on Si(001),” Journal of Vacuum Science and Technology A 22 (2004) 1356-1360.

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526. D.M. Schaadt, E.T. Yu, V. Vaithyanathan, and D.G. Schlom, “Nanoscale Current Transport in Epitaxial SrTiO₃ on n⁺‑Si investigated with Conductive Atomic Force Microscopy,” Journal of Vacuum Science and Technology B 22 (2004) 2030-2034.

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527. G. Lucovsky, J.G. Hong, C.C. Fulton, Y. Zou, R.J. Nemanich, H. Ade, D.G. Schlom, and J.L. Freeouf, “Spectroscopic Studies of Metal High-k Dielectrics:  Transition Metal Oxides and Silicates, and Complex Rare Earth/Transition Metal Oxides,” Physica Status Solidi (b) 241 (2004) 2221-2235. 
528. L.F. Edge, D.G. Schlom, R.T. Brewer, Y.J. Chabal, J.R. Williams, S.A. Chambers, C. Hinkle, G. Lucovsky, Y. Yang, S. Stemmer, M. Copel, B. Holländer, and J. Schubert, “Suppression of Subcutaneous Oxidation during the Deposition of Amorphous Lanthanum Aluminate on Silicon,” Applied Physics Letters 84 (2004) 4629-4631.

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529. C.M. Osburn, A. Kingon, G. Lucovsky, J.P. Maria, V. Misra, G. Parsons, S.A. Campbell, E. Eisenbraun, E. Garfunkel, T. Gustaffson, D.L. Kwong, J. Lee, T.P. Ma, D. Schlom, and S. Stemmer, “Materials and Processes for High‑K Gate Stacks,” Semiconductor Fabtech 22 (2004) 1-4.
530. Y.L. Li, L.Q. Chen, G. Asayama, D.G. Schlom, M.A. Zurbuchen, and S.K. Streiffer, “Ferroelectric Domain Structures in SrBi₂Nb₂O₉ Epitaxial Thin Films:  Electron Microscopy and Phase-Field Simulations,” Journal of Applied Physics 95 (2004) 6332-6340.

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531. A. Sharan, J. Lettieri, Y. Jia, W. Tian, X.Q. Pan, D.G. Schlom, and V. Gopalan, “Bismuth Manganite:  A Multiferroic with a Large Nonlinear Optical Response,” Physical Review B 69 (2004) 214109-1-214109-7.
532. D.A. Tenne, X.X. Xi, Y.L. Li, L.Q. Chen, A. Soukiassian, M.H. Zhu, A.R. James, J. Lettieri, D.G. Schlom, W. Tian, and X.Q. Pan, “Absence of Low-Temperature Phase Transitions in Epitaxial BaTiO₃ Thin Films,” Physical Review B 69 (2004) 174101-1 – 174101-5.

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533. H.P. Sun, W. Tian, X.Q. Pan, J.H. Haeni, and D.G. Schlom, “Evolution of Dislocation Arrays in Epitaxial BaTiO₃ Thin Films Grown on (100) SrTiO₃,” Applied Physics Letters 84 (2004) 3298-3300.

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534. G. Lucovsky, Y. Zhang, J.L. Whitten, D.G. Schlom, and J.L. Freeouf, “Separate and Independent Control of Interfacial Band Alignments and Dielectric Constants in Transition Metal Rare Earth Complex Oxides,” Microelectronic Engineering 72 (2004) 288-293.

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535. G. Lucovsky, Y. Zhang, J.L. Whitten, D.G. Schlom, and J.L. Freeouf, “Spectroscopic Studies of the Electrical Structure of Transition Metal and Rare Earth Complex Oxides,” Physica E 21 (2004) 712-716.

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536. L.F. Edge, D.G. Schlom, S.A. Chambers, E. Cicerrella, J.L. Freeouf, B. Holländer, and J. Schubert, “Measurement of the Band Offsets between Amorphous LaAlO₃ and Silicon,” Applied Physics Letters 84 (2004) 726-728.

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537. H. Zheng, J. Wang, S.E. Lofland, Z. Ma, L. Mohaddes-Ardabili, T. Zhao, L. Salamanca-Riba, S.R. Shinde, S.B. Ogale, F. Bai, D. Viehland, Y. Jia, D.G. Schlom, M. Wuttig, A. Roytburd, and R. Ramesh, “Multiferroic BaTiO₃-CoFe₂O₄ Nanostructures,” Science 303 (2004) 661-663.
538. W. Chang, S.W. Kirchoefer, J.A. Bellotti, J.M. Pond, D.G. Schlom, and J.H. Haeni, “(Ba,Sr)TiO₃ Ferroelectric Thin Films for Tunable Microwave Applications,” Revista Mexicana de Física 50 (2004) 501-505.
539. A.F. Moreira dos Santos, A.K. Cheetham, W. Tian, X.Q. Pan, Y. Jia, N.J. Murphy, J. Lettieri, and D.G. Schlom, “Epitaxial Growth and Properties of Metastable BiMnO₃ Thin Films,” Applied Physics Letters 84 (2004) 91-93.

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540. A. Sharan, I. An, C. Chen, R.W. Collins, J. Lettieri, Y. Jia, D.G. Schlom, and V. Gopalan, “Large Optical Nonlinearities in BiMnO₃ Thin Films,” Applied Physics Letters 83 (2003) 5169-5171.

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541. M.A. Zurbuchen, Y. Jia, S. Knapp, A.H. Carim, D.G. Schlom, and X.Q. Pan, “Defect Generation by Preferred Nucleation in Epitaxial Sr₂RuO₄ / LaAlO₃,” Applied Physics Letters 83 (2003) 3891-3893.

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542. X.X. Xi, X.H. Zeng, A.V. Pogrebnyakov, A. Soukiassian, S.Y. Xu, Y.F. Hu, E. Wertz, Q. Li, Y. Zhong, C.O. Brubaker, Z.K. Liu. E.M. Lysczek, J.M. Redwing, J. Lettieri, D.G. Schlom, W. Tian, H.P. Sun, and X.Q. Pan, “Deposition and Properties of Superconducting MgB₂ Thin Films,” Journal of Superconductivity 16 (2003) 801-806.

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543. X.Q. Pan, J.C. Jiang, C.D. Theis, and D.G. Schlom, “Domain Structure of Epitaxial Bi₄Ti₃O₁₂ Thin Films Grown on (001) SrTiO₃ Substrates,” Applied Physics Letters 83 (2003) 2315-2317.

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544. J. Lettieri, V. Vaithyanathan, S.K. Eah, J. Stephens, V. Sih, D.D. Awschalom, J. Levy, and D.G. Schlom, “Epitaxial Growth and Magnetic Properties of EuO on (001) Si by Molecular-Beam Epitaxy,” Applied Physics Letters 83 (2003) 975-977.

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545. M.A. Zurbuchen, J. Lettieri, S.J. Fulk, Y. Jia, A.H. Carim, D.G. Schlom, and S.K. Streiffer, “Bismuth Volatility Effects on the Perfection of SrBi₂Nb₂O₉ and SrBi₂Ta₂O₉ Films,” Applied Physics Letters 82 (2003) 4711-4713.

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546. A.V. Pogrebnyakov, J.M. Redwing, J.E. Jones, X.X. Xi, S.Y. Xu, Q. Li, V. Vaithyanathan, and D.G. Schlom, “Thickness Dependence of the Properties of Epitaxial MgB₂ Thin Films Grown by Hybrid Physical-Chemical Vapor Deposition,” Applied Physics Letters 82 (2003) 4319-4321.

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547. X.X. Xi, X.H. Zeng, A.V. Pogrebnyakov, S.Y. Xu, Q. Li, Y. Zhong, C.O. Brubaker, Z.K. Liu, E.M. Lysczek, J.M. Redwing, J. Lettieri, D.G. Schlom, W. Tian, and X.Q. Pan, “In Situ Growth of MgB₂ Thin Film by Hybrid Physical-Chemical Vapor Deposition,” IEEE Transactions on Applied Superconductivity 13 (2003) 3233-3237.
548. J. Schubert, O. Trithaveesak, A. Petraru, C.L. Jia, R. Uecker, P. Reiche, and D.G. Schlom, “Structural and Optical Properties of Epitaxial BaTiO₃ Thin Films Grown on GdScO₃(110),” Applied Physics Letters 82 (2003) 3460-3462.

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549. A. Schmehl, F. Lichtenberg, H. Bielefeldt, J. Mannhart, and D.G. Schlom, “Transport Properties of LaTiO_3+x Films and Heterostructures,” Applied Physics Letters 82 (2003) 3077-3079.
550. X.H. Zeng, A.V. Pogrebnyakov, M.H. Zhu, J.E. Jones, X.X. Xi, S.Y. Xu, E. Wertz, Q. Li, J.M. Redwing, J. Lettieri, V. Vaithyanathan, D.G. Schlom, Z.K. Liu, O. Trithaveesak, and J. Schubert, “Superconducting MgB₂ Thin Films on Silicon Carbide Substrates by Hybrid Physical-Chemical Vapor Deposition,” Applied Physics Letters 82 (2003) 2097-2099.

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551. J. Wang, J.B. Neaton, H. Zheng, V. Nagarajan, S.B. Ogale, B. Liu, D. Viehland, V. Vaithyanathan, D.G. Schlom, U.V. Waghmare, N.A. Spaldin, K.M. Rabe, M. Wuttig, and R. Ramesh, “Epitaxial BiFeO₃ Multiferroic Thin Film Heterostructures,” Science 299 (2003) 1719-1722; J. Wang, A. Scholl, H. Zheng, S.B. Ogale, D. Viehland, D.G. Schlom, N.A. Spaldin, K.M. Rabe. M. Wuttig, L. Mohaddes, J. Neaton, U. Waghmare, T. Zhao, and R. Ramesh, “Response to comment on ‘Epitaxial BiFeO₃ multiferroic thin film heterostructures,” Science 307 (2005) 1203b-1 – 1203b-2.
552. S.D. Bu, D.M. Kim, J.H. Choi, J. Giencke, E.E. Hellstrom, D.C. Larbalestier, S. Patnaik, L. Cooley, C.B. Eom, J. Lettieri, D.G. Schlom, W. Tian, and X.Q. Pan, “Synthesis and Properties of c‑axis Oriented Epitaxial MgB₂ Thin Films,” Applied Physics Letters 81 (2002) 1851-1853.

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553. X.H. Zeng, A.V. Pogrebnyakov, A. Kotcharov, J.E. Jones, X.X. Xi, E.M. Lysczek, J.M. Redwing, S.Y. Xu, Q. Li, J. Lettieri, D.G. Schlom, W. Tian, X.Q. Pan, and Z.K. Liu, “In Situ Epitaxial MgB₂ Thin Films for Superconducting Electronics,” Nature Materials 1 (2002) 35-38.
554. J. Lettieri, J.H. Haeni, and D.G. Schlom, “Critical Issues in the Heteroepitaxial Growth of Alkaline-Earth Oxides on Silicon,” Journal of Vacuum Science and Technology A 20 (2002) 1332-1340.

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555. B.T. Liu, K. Maki, Y. So, V. Nagarajan, R. Ramesh, J. Lettieri, J.H. Haeni, D.G. Schlom, W. Tian, X.Q. Pan, F.J. Walker, and R.A. McKee, “Epitaxial La‑doped SrTiO₃ on Silicon:  A Conductive Template for Epitaxial Ferroelectrics on Silicon,” Applied Physics Letters 80 (2002) 4801-4803.

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556. R. Ramesh and D.G. Schlom, “Materials Science:  Orienting Ferroelectric Films,” Science 296 (2002) 1975-1976.
557. G. Asayama, J. Lettieri, M.A. Zurbuchen, Y. Jia, S. Trolier-McKinstry, D.G. Schlom, S.K. Streiffer, J-P. Maria, S.D. Bu, and C.B. Eom, “Growth of (103) Fiber-Textured SrBi₂Nb₂O₉ Films on Pt-Coated Silicon,” Applied Physics Letters 80 (2002) 2371-2373.

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558. S-G. Lim, S. Kriventsov, T.N. Jackson, J.H. Haeni, D.G. Schlom, A.M. Balbashov, R. Uecker, P. Reiche, J.L. Freeouf, and G. Lucovsky, “Dielectric Functions and Optical Bandgaps of High‑K Dielectrics for Metal-Oxide-Semiconductor Field-Effect Transistors by Far Ultraviolet Spectroscopic Ellipsometry,” Journal of Applied Physics 91 (2002) 4500-4505.

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559. B.J. Gibbons, C.B. Eom, R.A. Rao, S. Trolier-McKinstry, and D.G. Schlom, “Oxidation of c‑axis-Oriented Epitaxial YBa₂Cu₃O_7– Thin Films in Ozone-Containing Atmospheres,” Journal of Materials Research 17 (2002) 884-889.
560. M.A. Zurbuchen, G. Asayama, D.G. Schlom, and S.K. Streiffer, “Ferroelectric Domain Structure of SrBi₂Nb₂O₉ Epitaxial Thin Films,” Physical Review Letters 88 (2002) 107601-1 – 107601-4.

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561. D.G. Schlom and J.H. Haeni, “A Thermodynamic Approach to Selecting Alternative Gate Dielectrics,” MRS Bulletin 27 (2002) 198-204.
562. X.X. Xi, X.H. Zeng, A. Soukiassian, J. Jones, J. Hotchkiss, Y. Zhong, C.O. Brubaker, Z.K. Liu, J. Lettieri, D.G. Schlom, Y.F. Hu, E. Wertz, Q. Li, W. Tian, H.P. Sun, and X.Q. Pan, “Thermodynamics and Thin Film Deposition of MgB₂ Superconductors,” Superconductor Science and Technology 15 (2002) 451-457.

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563. D.G. Schlom, J.H. Haeni, J. Lettieri, C.D. Theis, W. Tian, J.C. Jiang, and X.Q. Pan, “Oxide Nano-Engineering using MBE,” Materials Science & Engineering B 87 (2001) 282-291.
564. Y. Barad, J. Lettieri, C.D. Theis, D.G. Schlom, and V. Gopalan, “Domain Rearrangement in Ferroelectric Bi₄Ti₃O₁₂ Thin Films Studied by in situ Optical Second Harmonic Generation,” Journal of Applied Physics 90 (2001) 3497-3503.

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565. X.H. Zeng, A. Sukiasyan, X.X. Xi, Y.F. Hu, E. Wertz, Q. Li, W. Tian, H.P. Sun, X.Q. Pan, J. Lettieri, D.G. Schlom, C.O. Brubaker, Z.K. Liu, and Q. Li, “Superconducting Properties of Nanocrystalline MgB₂ Thin films Made by an in situ Annealing Process,” Applied Physics Letters 79 (2001) 1840-1842.

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566. M.A. Zurbuchen, D.G. Schlom, and S.K. Streiffer, “Comment on ‘High-resolution electron microscopy investigations on stacking faults in SrBi₂Ta₂O₉ ferroelectric thin films’ [Appl. Phys. Lett. 78, 973 (2001)],” Applied Physics Letters 79 (2001) 887-888.

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567. W. Tian, X.Q. Pan, J.H. Haeni, and D.G. Schlom, “Transmission Electron Microscopy Study of n = 1-5 Sr_n+1Ti_nO_3n+1 Epitaxial Thin Films,” Journal of Materials Research 16 (2001) 2013-2026.
568. Z.K. Liu, D.G. Schlom, Q. Li, and X.X. Xi, “Thermodynamics of the Mg‑B System:  Implications for the Deposition of MgB₂ Thin Films,” Applied Physics Letters 78 (2001) 3678-3680.

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569. Z.K. Liu, Y. Zhong, D.G. Schlom, X.X. Xi, and Q. Li, “Computational Thermodynamic Modeling of the Mg-B System,” Calphad 25 (2001) 299-303.

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570. S. Patnaik, L.D. Cooley, A. Gurevich, A.A. Polyanskii, J. Jiang, X.Y. Cai, A.A. Squitieri, M.T. Naus, M.K. Lee, J.H. Choi, L. Belenky, S.D. Bu, J. Lettieri, X. Song, D.G. Schlom, S.E. Babcock, C.B. Eom, E.E. Hellstrom, and D.C. Larbalestier, “Electronic Anisotropy, Magnetic Field-Temperature Phase Diagram and their Dependence on Resistivity in c‑Axis Oriented MgB₂ Thin Films,” Superconductor Science and Technology 14 (2001) 315-319.

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571. J.H. Haeni, C.D. Theis, D.G. Schlom, W. Tian, X.Q. Pan, H. Chang, I. Takeuchi, and X.‑D. Xiang, “Epitaxial Growth of the First Five Members of the Sr_n+1Ti_nO_3n+1 Ruddlesden-Popper Homologous Series,” Applied Physics Letters 78 (2001) 3292-3294.

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572. M.A. Zurbuchen, Y. Jia, S. Knapp, A.H. Carim, D.G. Schlom, L.‑N. Zou, and Y. Liu, “Suppression of Superconductivity by Crystallographic Defects in Epitaxial Sr₂RuO₄ Films,” Applied Physics Letters 78 (2001) 2351-2353.

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573. B.J. Gibbons, M.E. Hawley, S. Trolier-McKinstry, and D.G. Schlom, “Real-Time Spectroscopic Ellipsometry as a Characterization Tool for Oxide Molecular Beam Epitaxy,” Journal of Vacuum Science and Technology A 19 (2001) 584-590.

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574. M.A. Zurbuchen, J. Lettieri, Y. Jia, D.G. Schlom, S.K. Streiffer, and M.E. Hawley, “Transmission Electron Microscopy Study of (103)-Oriented Epitaxial SrBi₂Nb₂O₉ Films Grown on (111) SrTiO₃ and (111) SrRuO₃ / (111) SrTiO₃,” Journal of Materials Research 16 (2001) 489-502.
575. M.K. Lee, C.B. Eom, J. Lettieri, I.W. Scrymgeour, D.G. Schlom, W. Tian, X.Q. Pan, P.A. Ryan, and F. Tsui, “Epitaxial Thin Films of Hexagonal BaRuO₃ on (001) SrTiO₃,” Applied Physics Letters 78 (2001) 329-331.

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576. Y. Barad, J. Lettieri, C.D. Theis, D.G. Schlom, V. Gopalan, J.C. Jiang, and X.Q. Pan, “Probing Domain Microstructure in Ferroelectric Bi₄Ti₃O₁₂ Thin Films by Optical Second Harmonic Generation,” Journal of Applied Physics 89 (2001) 1387-1392; Y. Barad, J. Lettieri, C.D. Theis, D.G. Schlom, V. Gopalan, J.C. Jiang, and X.Q. Pan, “Erratum:  ‘Probing Domain Microstructure in Ferroelectric Bi₄Ti₃O₁₂ Thin Films by Optical Second Harmonic Generation,’ [J. Appl. Phys. 89, 1387 (2001)],” Journal of Applied Physics 89 (2001) 5230. 

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577. Lettieri, Y. Jia, S.J. Fulk, D.G. Schlom, M.E. Hawley, and G.W. Brown, “Optimization of the Growth of Epitaxial SrBi₂Ta₂O₉ Thin Films by Pulsed Laser Deposition,” Thin Solid Films 379 (2000) 64-71.
578. J. Lettieri, M.A. Zurbuchen, Y. Jia, D.G. Schlom, S.K. Streiffer, and M.E. Hawley, “Epitaxial Growth of SrBi₂Nb₂O₉ on (110) SrTiO₃ and the Establishment of a Lower Bound on the Spontaneous Polarization of SrBi₂Nb₂O₉,” Applied Physics Letters 77 (2000) 3090-3092.

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579. J. Lettieri, I.W. Scrymgeour, D.G. Schlom, M.K. Lee, and C.B. Eom, “Comment on ‘Lattice Deformation and Magnetic Properties in Epitaxial Thin Films of Sr_1‑xBa_xRuO₃’ [Appl. Phys. Lett. 73, 1200 (1999)],” Applied Physics Letters 77 (2000) 600-601.

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580. G.W. Brown, M.E. Hawley, C.D. Theis, J. Yeh, and D.G. Schlom, “Atomic Force Microscopy Examination of the Evolution of the Surface Morphology of Bi₄Ti₃O₁₂ grown by Molecular Beam Epitaxy,” Journal of Electroceramics 4 (2000) 351-356.
581. J.H. Haeni, C.D. Theis, and D.G. Schlom, “RHEED Intensity Oscillations for the Stoichiometric Growth of SrTiO₃ Thin Films by Reactive Molecular Beam Epitaxy,” Journal of Electroceramics 4 (2000) 385-391.
582. J. J. Lettieri, M.A. Zurbuchen, Y. Jia, D.G. Schlom, S.K. Streiffer, and M.E. Hawley, “Epitaxial Growth of non‑c‑oriented SrBi₂Nb₂O₉ on (111) SrTiO₃,” Applied Physics Letters 76 (2000) 2937-2939.

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583. H.S. Wang, E. Wertz, Y.F. Hu, Q. Li, and D.G. Schlom, “Role of Strain in Magnetotransport Properties of Pr_0.67Sr_0.33MnO₃ Thin Films,” Journal of Applied Physics 87 (2000) 7409-7414.

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584. A.H. Carim, P. Dera, L.W. Finger, B. Mysen, C.T. Prewitt, and D.G. Schlom, “Crystal Structure and Compressibility of Ba₄Ru₃O₁₀,” Journal of Solid State Chemistry 149 (2000) 137-142.

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585. D.L. Kaiser, M.D. Vaudin, L.D. Rotter, J.E. Bonevich, I. Levin, J.T. Armstrong, A.L. Roytburd, and D.G. Schlom, “Effect of Film Composition on the Orientation of (Ba,Sr)TiO₃ Grains in (Ba,Sr)_yTiO_2+y Thin Films,” Journal of Materials Research 14 (1999) 4657-4666.
586. G.W. Brown, M.E. Hawley, C.D. Theis, J. Yeh, and D.G. Schlom, “Atomic Force Microscopy Examination of the Evolution of Surface Morphology of Bi₄Ti₃O₁₂ grown by Molecular Beam Epitaxy,” Thin Solid Films 357 (1999) 13-17.
587. Y. Jia, M.A. Zurbuchen, S. Wozniak, A.H. Carim, D.G. Schlom, L‑N. Zou, S. Briczinski, and Y. Liu, “Epitaxial Growth of Metastable Ba₂RuO₄ Films with the K₂NiF₄ Structure,” Applied Physics Letters 74 (1999) 3830-3832.

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588. D.J. Gundlach, T.N. Jackson, D.G. Schlom, and S.F. Nelson, “Solvent-Induced Phase Transition in Thermally Evaporated Pentacene Films,” Applied Physics Letters 74 (1999) 3302-3304.

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589. J.C. Jiang, X.Q. Pan, W. Tian, C.D. Theis, and D.G. Schlom, “Abrupt PbTiO₃/SrTiO₃ Superlattices Grown by Reactive Molecular Beam Epitaxy,” Applied Physics Letters 74 (1999) 2851-2853.

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590. R. Jin, Yu. Zadorozhny, Y. Liu, D.G. Schlom, Y. Mori, and Y. Maeno, “Observation of Anomalous Temperature Dependence of the Critical Current in Pb/Sr₂RuO₄/Pb Junctions,” Physical Review B 59 (1999) 4433-4438.

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591. J. Lettieri, Y. Jia, M. Urbanik, C.I. Weber, J-P. Maria, D.G. Schlom, H. Li, R. Ramesh, R. Uecker, and P. Reiche, “Epitaxial Growth of (001)-Oriented and (110)-Oriented SrBi₂Ta₂O₉ Thin Films,” Applied Physics Letters 73 (1998) 2923-2925.
592. C.D. Theis, J. Yeh, D.G. Schlom, M.E. Hawley, and G.W. Brown “The Influence of Vicinal SrTiO₃ Surfaces on the Growth and Ferroelectric Properties of Epitaxial Bi₄Ti₃O₁₂ Thin Films,” Materials Science & Engineering B 56 (1998) 228-233.
593. J. Lettieri, C.I. Weber, and D.G. Schlom, “Comment on ‘Control of epitaxial growth for SrBi₂Ta₂O₉ thin films’ [Appl. Phys. Lett. 72, 665 (1998)],” Applied Physics Letters 73 (1998) 2057-2058.

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594. R. Jin, Yu. Zadorozhny, Y. Liu, D.G. Schlom, F. Lichtenberg, and J.G. Bednorz, “Normal-State Magnetoresistance of Sr₂RuO₄ Single Crystals,” Journal of Physics and Chemistry of Solids 59 (1998) 2215-2217.
595. C.D. Theis, J. Yeh, D.G. Schlom, M.E. Hawley, G.W. Brown, J.C. Jiang, and X.Q. Pan, “Adsorption-Controlled Growth of Bi₄Ti₃O₁₂ by Reactive MBE,” Applied Physics Letters 72 (1998) 2817-2819.
596. J‑P. Maria, S. Trolier-McKinstry, D.G. Schlom, M.E. Hawley, and G.W. Brown, “The Influence of Energetic Bombardment on the Structure and Properties of Epitaxial SrRuO₃ Thin Films Grown by Pulsed Laser Deposition,” Journal of Applied Physics 83 (1998) 4373-4379.

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597. B.C. Chakoumakos, D.G. Schlom, M. Urbanik, and J. Luine, “Thermal Expansion of LaAlO₃ and (La,Sr)(Al,Ta)O₃, Substrate Materials for Superconducting Thin-Film Device Applications,” Journal of Applied Physics 83 (1998) 1979-1982.

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598. K. Wasa, Y. Haneda, T. Satoh, H. Adachi, I. Kanno, K Setsune, D.G. Schlom, S. Trolier-McKinstry, and C-B. Eom, “Continuous Single Crystal PbTiO₃ Thin Films Epitaxially Grown on Miscut (001)SrTiO₃,” Journal of the Korean Physical Society 32 (1998) S1344-S1348.
599. D.G. Schlom, “Visualizing the Anisotropy of Crystals:  Nye plus 3‑D Graphics,” Journal of Materials Education 20 (1998) 77-90. 
600. D.J. Gundlach, Y.‑Y. Lin, T.N. Jackson, and D.G. Schlom, “Oligophenyl-Based Organic Thin Film Transistors,” Applied Physics Letters 71 (1997) 3853-3855.

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601. D.G. Schlom, S.B. Knapp, S. Wozniak, L-N. Zou, J. Park, Y. Liu, M.E. Hawley, G.W. Brown, A. Dabkowski, H.A. Dabkowska, R. Uecker, and P. Reiche, “Growth of Epitaxial (Sr,Ba)_n+1Ru_nO_3n+1 Films,” Superconductor Science and Technology 10 (1997) 891-895.

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602. S. Madhavan, Y. Liu, D.G. Schlom, A. Dabkowski, H.A. Dabkowska, Y. Suzuki, I. Takeuchi, Z. Trajanovic, and R.P. Sharma, “Epitaxial Sr₂RuO₄ Heterostructures,” IEEE Transactions on Applied Superconductivity 7 (1997) 2063-2066.
603. J.C. Clark, J.P. Maria, K.J. Hubbard, and D.G. Schlom, “An Oxygen-Compatible Radiant Substrate Heater for Thin-Film Growth at Substrate Temperatures up to 1050 °C,” Review of Scientific Instruments 68 (1997) 2538-2541.

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604. C.D. Theis and D.G. Schlom, “Domain Structure of Epitaxial PbTiO₃ Films Grown on Vicinal (001) SrTiO₃,” Journal of Materials Research 12 (1997) 1297-1305.
605. S. Madhavan, J.A. Mitchell, T. Nemoto, S. Wozniak, Ying Liu, D.G. Schlom, A. Dabkowski, and H.A. Dabkowska, “Growth of Epitaxial Sr₂RuO₄ Films and YBa₂Cu₃O_7‑ / Sr₂RuO₄ Heterostructures,” Journal of Crystal Growth 174 (1997) 417-423.
606. C.D. Theis and D.G. Schlom, “Epitaxial Lead Titanate Grown by MBE,” Journal of Crystal Growth 174 (1997) 473-479.
607. D.J. Gundlach, Y.Y. Lin, T.N. Jackson, S.F. Nelson, and D.G. Schlom, “Pentacene Organic Thin-Film Transistors—Molecular Ordering and Mobility,” IEEE Electron Device Letters 18 (1997) 87-89.
608. D.G. Schlom, “Visualizing the Physics of Materials—Part II,” Journal of Materials Education 19 (1997) 77-85. 
609. K.J. Hubbard and D.G. Schlom, “Thermodynamic Stability of Binary Oxides in Contact with Silicon,” Journal of Materials Research 11 (1996) 2757-2776.
610. C.D. Theis and D.G. Schlom, “Cheap and Stable Titanium Source for Use in Oxide Molecular Beam Epitaxy Systems,” Journal of Vacuum Science and Technology A 14 (1996) 2677-2679.

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611. D.G. Schlom, E.S. Hellman, E.H. Hartford, Jr., C.B. Eom, J.C. Clark, and J. Mannhart, “Origin of the ø  ~ ±9° Peaks in YBa₂Cu₃O_7‑ Films Grown on Cubic Zirconia Substrates,” Journal of Materials Research 11 (1996) 1336-1348.
612. S. Madhavan, D.G. Schlom, A. Dabkowski, H.A. Dabkowska, and Y. Liu, “Growth of Epitaxial a‑axis and c‑axis Oriented Sr₂RuO₄ Films,” Applied Physics Letters 68 (1996) 559-561.

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613. Y. Liu, J.A. Mitchell, S. Madhavan, D.G. Schlom, A. Dabkowski, and H.A. Dabkowska, “Electrical Transport Studies of Epitaxial Sr₂RuO₄ Films,” Czechoslovak Journal of Physics 46 (supplement, part S2) (1996) 1113-1114.

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614. D.G. Schlom, “Visualizing the Physics of Materials,” Journal of Materials Education 18 (1996) 77-95. 
615. N. Chandrasekhar and D.G. Schlom, “Evidence for Surface Melting During the Growth of High T_c Thin Films,” Physica C 235‑240 (1994) 697-698.

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616. D.G. Schlom, D. Anselmetti, J.G. Bednorz, Ch. Gerber, and J. Mannhart, “Epitaxial Growth of Cuprate Superconductors from the Gas Phase,” Journal of Crystal Growth 137 (1994) 259-267.
617. J. Mannhart, J.G. Bednorz, Ch. Gerber, D.G. Schlom, and J. Ströbel, “Electric Field Effects in YBa₂Cu₃O_7‑ Films,” Physica B 194‑196 (1994) 1353-1354.

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618. G.L. Catchen, T.M. Rearick, and D.G. Schlom, “High-Temperature Phase Transitions and Low-Temperature Magnetic Ordering in SrRuO₃ and CaRuO₃ Ceramics Studied Using Perturbed-Angular-Correlation Spectroscopy,” Physical Review B 49 (1994) 318-326.

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619. A. Catana, J.G. Bednorz, Ch. Gerber, J. Mannhart, and D.G. Schlom, “Surface Outgrowths on Sputtered YBa₂Cu₃O_7‑x Films:  A Combined Atomic Force Microscopy and Transmission Electron Microscopy Study,” Applied Physics Letters 63 (1993) 553-555.

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620. J. Mannhart, J.G. Bednorz, K.A. Müller, D.G. Schlom, and J. Ströbel, “Electric Field Effect in High-T_c Superconductors,” Journal of Alloys and Compounds 195 (1993) 519-526.

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621. A. Catana, D.G. Schlom, J. Mannhart, and J.G. Bednorz, “a/c YBa₂Cu₃O₇ Boundaries:  Preferential Sites for the Nucleation of Epitaxial Y₂O₃ Precipitates,” Applied Physics Letters 61 (1992) 720-722.

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622. F. Lichtenberg, A. Catana, J. Mannhart, and D.G. Schlom, “Sr₂RuO₄:  A Metallic Substrate for the Epitaxial Growth of YBa₂Cu₃O_7‑,” Applied Physics Letters 60 (1992) 1138-1140.

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623. A. Catana, R.F. Broom, J.G. Bednorz, J. Mannhart, and D.G. Schlom, “Identification of Epitaxial Y₂O₃ Inclusions in Sputtered YBa₂Cu₃O₇ Films:  Impact on Film Growth,” Applied Physics Letters 60 (1992) 1016-1018.

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624. D.G. Schlom, D. Anselmetti, J.G. Bednorz, R. Broom, A. Catana, T. Frey, Ch. Gerber, H.-J. Güntherodt, H.P. Lang, and J. Mannhart, “Screw Dislocation Mediated Growth of Sputtered and Laser-Ablated YBa₂Cu₃O_7‑ Films,” Zeitschrift für Physik B 86 (1992) 163-175.

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625. J. Mannhart, D. Anselmetti, J.G. Bednorz, A. Catana, Ch. Gerber, K.A. Müller, and D.G. Schlom, “Correlation Between J_c and Screw Dislocation Density in Sputtered YBa₂Cu₃O_7‑ Films,” Zeitschrift für Physik B 86 (1992) 177-181.

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626. J. Mannhart, D. Anselmetti, J.G. Bednorz, Ch. Gerber, K.A. Müller, and D.G. Schlom, “Pinning Centers in YBa₂Cu₃O_7‑ Films,” Superconductor Science and Technology 5 (1992) S125-S128.

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627. J. Mannhart, D.G. Schlom, J.G. Bednorz, and K.A. Müller, “Electric Field Effect on Superconducting YBa₂Cu₃O_7‑ Films,” Physica C 185-189 (1991) 1745-1746.

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628. D.G. Schlom, D. Anselmetti, J.G. Bednorz, Ch. Gerber, J. Mannhart, and K.A. Müller, “Observation of Screw Dislocations in Sputtered YBa₂Cu₃O_7‑ Films,” Physica C 185-189 (1991) 2007-2008.

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629. J.G. Bednorz, J. Mannhart, C.A. Müller, and D.G. Schlom, “Superconducting Device with Enhanced Sensitivity,” IBM Technical Disclosure Bulletin 34 (1991) 13-14. 
630. J. Mannhart, D.G. Schlom, J.G. Bednorz, and K.A. Müller, “Influence of Electric Fields on Pinning in YBa₂Cu₃O_7‑ Films,” Physical Review Letters 67 (1991) 2099-2101.

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631. W.S. Lee, G.W. Yoffe, D.G. Schlom, and J.S. Harris, Jr., “Accurate Measurement of MBE Substrate Temperature,” Journal of Crystal Growth 111 (1991) 131-135.
632. J.N. Eckstein, I. Bozovic, D.G. Schlom, and J.S. Harris, Jr., “Growth of Superconducting Bi₂Sr₂Ca_n‑1Cu_nO_x Thin Films by Atomically Layered Epitaxy,” Journal of Crystal Growth 111 (1991) 973-977.
633. C. Gerber, D. Anselmetti, J.G. Bednorz, J. Mannhart, and D.G. Schlom, “Screw Dislocations in High-T_c Films,” Nature 350 (1991) 279-280.
634. J. Mannhart, J.G. Bednorz, K.A. Müller, and D.G. Schlom, “Electric Field Effect on Superconducting YBa₂Cu₃O_7‑ Films,” Zeitschrift für Physik B 83 (1991) 307-311.

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635. J.N. Eckstein, I. Bozovic, D.G. Schlom, and J.S. Harris, Jr., “Growth of Untwinned Bi₂Sr₂Ca₂Cu₃O_x Thin Films by Atomically Layered Epitaxy,” Applied Physics Letters 57 (1990) 1049-1051.

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636. K. Kojima, D.G. Schlom, K. Kuroda, M. Tanioku, K. Hamanaka, J.N. Eckstein, and J.S. Harris, Jr., “Superstructure in Thin Films of Bi-Based Compounds on MgO,” Japanese Journal of Applied Physics 29 (1990) L1638-L1641.
637. J.N. Eckstein, I. Bozovic, K.E. von Dessonneck, D.G. Schlom, J.S. Harris, Jr., and S.M. Baumann, “Atomically Layered Heteroepitaxial Growth of Single-Crystal Films of Superconducting Bi₂Sr₂Ca₂Cu₃O_x,” Applied Physics Letters 57 (1990) 931-933.

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638. D.G. Schlom, A.F. Marshall, J.T. Sizemore, Z.J. Chen, J.N. Eckstein, I. Bozovic, K.E. von Dessonneck, J.S. Harris, Jr., and J.C. Bravman, “Molecular Beam Epitaxial Growth of Layered Bi-Sr-Ca-Cu-O Compounds,” Journal of Crystal Growth 102 (1990) 361-375.
639. E.S. Hellman, D.G. Schlom, A.F. Marshall, S.K. Streiffer, J.S. Harris, Jr., M.R. Beasley, J.C. Bravman, T.H. Geballe, J.N. Eckstein, and C. Webb, “Phase Characterization of Dysprosium Barium Copper Oxide Thin Films Grown on Strontium Titanate by Molecular Beam Epitaxy,” Journal of Materials Research 4 (1989) 476-495.
640. D.G. Schlom, W.S. Lee, T. Ma, and J.S. Harris, Jr., “Reduction of Gallium–Related Oval Defects,” Journal of Vacuum Science and Technology B 7 (1989) 296-298.
641. J.N. Eckstein, D.G. Schlom, E.S. Hellman, K.E. von Dessonneck, Z.J. Chen, C. Webb, F. Turner, J.S. Harris, Jr., M.R. Beasley, and T.H. Geballe, “Epitaxial Growth of High-Temperature Superconducting Thin Films,” Journal of Vacuum Science and Technology B 7 (1989) 319-323.
642. J.S. Harris, Jr., J.N. Eckstein, E.S. Hellman, and D.G. Schlom, “MBE Growth of High Critical Temperature Superconductors,” Journal of Crystal Growth 95 (1989) 607-616.
643. D.G. Schlom, J.N. Eckstein, E.S. Hellman, S.K. Streiffer, J.S. Harris, Jr., M.R. Beasley, J.C. Bravman, T.H. Geballe, C. Webb, K.E. von Dessonneck, and F. Turner, “Molecular Beam Epitaxy of Layered Dy-Ba-Cu-O Compounds,” Applied Physics Letters 53 (1988) 1660-1662.

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644. P.R. de la Houssaye, D.R. Allee, Y.-C. Pao, D.G. Schlom, J.S. Harris, Jr., and R.F.W. Pease, “Electron Saturation Velocity Variation in InGaAs and GaAs Channel MODFETs for Gate Lengths to 550 Å,” IEEE Electron Device Letters 9 (1988) 148-150.

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645. E.S. Hellman, D.G. Schlom, N. Missert, K. Char, J.S. Harris, Jr., M.R. Beasley, A. Kapitulnik, T.H. Geballe, J.N. Eckstein, S.-L. Weng, and C. Webb, “Molecular Beam Epitaxy and Deposition of High-T_c Superconductors,” Journal of Vacuum Science and Technology B 6 (1988) 799-803.

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646. D.R. Allee, P.R. de la Houssaye, D.G. Schlom, J.S. Harris, Jr., and R.F.W. Pease, “Sub-100 nm Gate Length GaAs Metal-Semiconductor Field-Effect Transistors and Modulation-Doped Field-Effect Transistors Fabricated by a Combination of Molecular Beam Epitaxy and Electron Beam Lithography,” Journal of Vacuum Science and Technology B 6 (1988) 328-332.
647. G.W. Yoffe, D.G. Schlom, and J.S. Harris, Jr., “Modulation of Light by an Electrically Tunable Multilayer Interference Filter,” Applied Physics Letters 51 (1987) 1876-1878. 

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648. G.W. Yoffe, D.G. Schlom, and J.S. Harris, “Light-Modulation by Tunable Interference Filter,” IEEE Transactions on Electron Devices 34 (1987) 2363-2363.
649. C. Webb, S.-L. Weng, J.N. Eckstein, N. Missert, K. Char, D.G. Schlom, E.S. Hellman, M.R. Beasley, A. Kapitulnik, and J.S. Harris, Jr., “Growth of High T_c Superconducting Thin Films Using Molecular Beam Epitaxy Techniques,” Applied Physics Letters 51 (1987) 1191-1193.

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650. E.C. Larkins, E.S. Hellman, D.G. Schlom, and J.S. Harris, Jr. “GaAs with Very Low Acceptor Impurity Background Grown by Molecular Beam Epitaxy,” Journal of Crystal Growth 81 (1987) 344-348.
651. E.C. Larkins, E.S. Hellman, D.G. Schlom, and J.S. Harris, Jr., “Reduction of the Acceptor Impurity Background in GaAs Grown by Molecular Beam Epitaxy,” Applied Physics Letters 49 (1986) 391-393.

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652. D.G. Schlom and P.J. Shlichta, “Comparison of Theory with Experiment in Convectionless Growth of Crystals from Solution,” Journal of Crystal Growth 71 (1985) 791-794.