Schlom Group | Oxide Molecular-Beam Epitaxy

PtCoO2 grown by MBE and probed by RHEED, LEED, and ARPES
Electrostatic engineering transmutes ferroelectric into antiferroelectric
Metamorphosed Multiferroics: Ferroelectric Distortions Enhance Magnetism
Part of a Highly Collaborative Effort
Designer Multiferroics in which puckering from a geometric ferroelectric enhances ferrimagnetism
Strain Engineering of Oxides
How Srn+1TinO3n+1 Films Grow
2-Step Polarization Switching of BiFeO3
ADF-STEM and STEM-EELS of LuFe2O4
STEM-EELS of (LaMnO3)6/(SrMnO3)3 Superlattice
Meet our group

Recent Publications

High-Mobility La-doped BaSnO3 Thin Films with Sheet Carrier Concentrations Relevant to Transistors

Electric Field-Controlled Spin Transport in a Topological Insulator Interfaced with a Ferroelectric Antiferromagnet

Altermagnetic Signatures and Topological Textures in Ultrathin Multiferroic BiFeO3

Exceptional Electro-Optic Coefficient Unlocked via Polarization Swaying in KNbO3 Thin Films

A 7 eV Bandgap Semiconductor based on Silicon-doped α-(AlxGa1−x)₂O₃

Group News

Cornell semiconductor sets record for widest bandgap

Maya Ramesh receives Outstanding Student MBE Award at 24th International Conference on Molecular Beam Epitaxy (ICMBE 2026)

Researchers achieve the 'impossible" low-loss, tunable dielectric

Schlom elected to National Academy of Sciences

Kathy Azizie receives Outstanding Presentation Award at International Conference on Materials and Systems for Sustainability 2025 (ICMaSS)