Journal Publications

1. T. Mairoser, A. Schmehl, A. Melville, T. Heeg, L. Canella, P. Böni, W. Zander, J. Schubert, D.E. Shai, E.J. Monkman, K.M. Shen, D.G. Schlom, and J. Mannhart, “Is there an Intrinsic Limit to the Charge-Carrier-Induced Increase of the Curie Temperature of EuO?,” Physical Review Letters 105 (2010) 257206-1 – 257206-4.

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2. A. Perucchi, L. Baldassarre, A. Nucara, P. Calvani, C. Adamo, D.G. Schlom, P. Orgiani, L. Maritato, and S. Lupi, “Optical Properties of (SrMnO₃)_n/(LaMnO₃)_2n Superlattices: An Insulator-to-Metal Transition Observed in the Absence of Disorder,” Nano Letters 10 (2010) 4819-4823.
3. J. Hlinka, V. Železny, S.M. Nakhmanson, A. Soukiassian, X.X. Xi, and D.G. Schlom, “Soft-Mode Spectroscopy of Epitaxial BaTiO₃/SrTiO₃ Superlattices,” Physical Review B 82 (2010) 224102-1 – 224102-5.
4. D.G. Schlom and L.N. Pfeiffer, “Oxide Electronics:  Upward Mobility Rocks!,” Nature Materials 9 (2010) 881-883.
5. G. Sheng, Y.L. Li, J.X. Zhang, S. Choudhury, Q.X. Jia, V. Gopalan, D.G. Schlom, Z.K. Liu, and L.Q. Chen, “Phase Transitions and Domain Stabilities in Biaxially Strained (001) SrTiO₃ Epitaxial Thin Films,” Journal of Applied Physics 108 (2010) 084113-1 – 084113-6.

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6. D.A. Tenne, A.K. Farrar, C.M. Brooks, T. Heeg, J. Schubert, H.W. Jang, C.W. Bark, C.M. Folkman, C.B. Eom, and D.G. Schlom, “Ferroelectricity in Nonstoichiometric SrTiO₃ Films Studied by Ultraviolet Raman Spectroscopy,” Applied Physics Letters 97 (2010) 142901-1 – 142901-3.

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7. C.J. Fennie and D.G. Schlom, “Transition-Metal Oxides:  Resistance is not Futile,” Nature Materials 9 (2010) 787-788.
8. A. Kumar, S. Denev, R.J. Zeches, E. Vlahos, N.J. Podraza, A. Melville, D.G. Schlom, R. Ramesh, and V. Gopalan, “Probing Mixed Tetragonal/Rhombohedral-Like Monoclinic Phases in Strained Bismuth Ferrite Films by Optical Second Harmonic Generation,” Applied Physics Letters 97 (2010) 112903-1 – 112903-3.

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9. S. Coh, T. Heeg, J.H. Haeni, M.D. Biegalski, J. Lettieri, L.F. Edge, K.E. O’Brien, M. Bernhagen, P. Reiche, R. Uecker, S. Trolier-McKinstry, D.G. Schlom, and D. Vanderbilt, “Si-Compatible Candidates for High- Dielectrics with the Pbnm Perovskite Structure,” Physical Review B 82 (2010) 064101-1 – 064101-16.
10. A.J. Millis and D.G. Schlom, “Electron-Hole Liquids in Transition-Metal Oxide Heterostructures,” Physical Review B 82 (2010) 073101-1 – 073101-4.
11. M. Matsubara, A. Schmehl, J. Mannhart, D.G. Schlom, and M. Fiebig, “Large Nonlinear Magneto-Optical Effect in the Centrosymmetric Ferromagnetic Semiconductor EuO,” Physical Review B 81 (2010) 214447-1 – 214447-6.

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12. J.H. Lee, X. Ke, R. Misra, J.F. Ihlefeld, X.S. Xu, Z.G. Mei, T. Heeg, M. Roeckerath, J. Schubert, Z.K. Liu, J.L. Musfeldt, P. Schiffer, and D.G. Schlom, “Adsorption-Controlled Growth of BiMnO₃ Films by Molecular-Beam Epitaxy,” Applied Physics Letters 96 (2010) 262905-1 – 262905-3.

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13. X. Weng, W. Tian, D.G. Schlom, and E.C. Dickey, “Structure and Chemistry of the (111)Sc₂O₃/(0001) GaN Epitaxial Interface,” Applied Physics Letters 96 (2010) 241901-1 – 241901-3.

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14. G. Sheng, Y.L. Li, J.X. Zhang, S. Choudhury, Q.X. Jia, V. Gopalan, D.G. Schlom, Z.K. Liu, and L.Q. Chen, “A Modified Landau–Devonshire Thermodynamic Potential for Strontium Titanate,” Applied Physics Letters 96 (2010) 232902-1 – 232902-3.

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15. H.W. Jang, A. Kumar, S. Denev, M.D. Biegalski, P. Maksymovych, C.W. Bark, C.T. Nelson, C.M. Folkman, S.H. Baek, N. Balke, C.M. Brooks, D.A. Tenne, D.G. Schlom, L.Q. Chen, X.Q. Pan, S.V. Kalinin, V. Gopalan, and C.B. Eom, “Ferroelectricity in Strain-Free SrTiO₃ Thin Films,” Physical Review Letters 104 (2010) 197601-1 – 197601-4.

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16. X.S. Xu, J.F. Ihlefeld, J.H. Lee, O.K. Ezekoye, E. Vlahos, R. Ramesh, V. Gopalan, X.Q. Pan, D.G. Schlom, and J.L. Musfeldt, “Tunable Band Gap in Bi(Fe_1−xMn_x)O₃ Films,” Applied Physics Letters 96 (2010) 192901-1 – 192901-3.

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17. N.D. Lanzillotti-Kimura, A. Fainstein, B. Perrin, B. Jusserand, A. Soukiassian, X.X. Xi, and D.G. Schlom, “Enhancement and Inhibition of Coherent Phonon Emission of a Ni Film in a BaTiO₃/SrTiO₃ Cavity,” Physical Review Letters 104 (2010) 187402-1 – 187402-4.
18. P. Somers, A. Stesmans, V.V. Afanas’ev, W. Tian, L.F. Edge, and D.G. Schlom, “Comparative Electron Spin Resonance Study of epi-Lu₂O₃/(111)Si and a-Lu₂O₃/(100)Si Interfaces:  Misfit Point Defects,” Journal of Applied Physics 107 (2010) 094502-1 – 094502-12.

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19. A. Ali, S. Koveshnikov, S. Oktyabrsky, R. Kambhampati, T. Heeg, D. Schlom, and S. Datta, “Small-Signal Response of Inversion Layers in High-Mobility In_0.53Ga_0.47As MOSFETs made with Thin High-k Dielectrics,” IEEE Transactions on Electron Devices 57 (2010) 742-748.

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20. P. Chen, N.J. Podraza, X.S. Xu, A. Melville, E. Vlahos, V. Gopalan, R. Ramesh, D.G. Schlom, and J.L. Musfeldt, “Optical Properties of Quasi-Tetragonal BiFeO₃ Thin Films,” Applied Physics Letters 96 (2010) 131907-1 – 131907-3.

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21. J. Mannhart and D.G. Schlom, “Oxide Interfaces—An Opportunity for Electronics,” Science 327 (2010) 1607-1611.
22. D.G. Cahill, A. Melville, D.G. Schlom, and M.A. Zurbuchen, “Low Thermal Conductivity of CsBiNb₂O₇ Epitaxial Layers,” Applied Physics Letters 96 (2010) 121903-1 – 121903-3.

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23. X.H. Pan, W. Guo, W. Tian, H.P. He, Z.Z. Ye, X.Q. Gu, D.G. Schlom, and X.Q. Pan, “Optical Properties of ZnO/Zn_0.9Mg_0.1O Multiple Quantum Wells Grown on (111) Si Using Buffer Assisted Pulsed-Laser Deposition,” Journal of Applied Physics 107 (2010) 033102-1 – 033102-4.
24. M. Belmeguenai, S. Mercone, C. Adamo, L. Méchin, C. Fur, P. Monod, P. Moch, and D.G. Schlom, “Temperature Dependence of Magnetic Properties of La_0.7Sr_0.3MnO₃/SrTiO₃ Thin Films on Silicon Substrates,” Physical Review B 81 (2010) 054410-1 – 054410-8.

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25. X.H. Pan, W. Guo, Z.Z. Ye, B. Liu, Y. Che, C.T. Nelson, Y. Zhang, W. Tian, D.G. Schlom, and X.Q. Pan, “Epitaxial Zn_1–xMg_xO Films Grown on (111) Si by Pulsed Laser Deposition,” Chemical Physics Letters 485 (2010) 363–366.

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26. M.A. Zurbuchen, V.O. Sherman, A.K. Tagantsev, J. Schubert, M.E. Hawley, D.D. Fong, S.K. Streiffer, Y. Jia, W. Tian, and D.G. Schlom, “Synthesis, Structure, and Electrical Behavior of Sr₄Bi₄Ti₇O₂₄,” Journal of Applied Physics 107 (2010) 024106-1 – 024106-9.

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27. M. Roeckerath, J.M.J. Lopes, E. Durğun Özben, C. Urban, J. Schubert, S. Mantl, Y. Jia, and D.G. Schlom, “Investigation of Terbium Scandate as an Alternative Gate Dielectric in Fully Depleted Transistors,” Applied Physics Letters 96 (2010) 013513-1 – 013513-3.

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28. L.F. Kourkoutis, H.L. Xin, T. Higuchi, Y. Hotta, J.H. Lee, Y. Hikita, D.G. Schlom, H.Y. Hwang, and D.A. Muller, “Atomic-Resolution Spectroscopic Imaging of Oxide Interfaces,” Philosophical Magazine 90 (2010) 4731-4749.

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