L.F. Edge, W. Tian, V. Vaithyanathan, T. Heeg, D.G. Schlom, D.O. Klenov, S. Stemmer, J.G. Wang, and M.J. Kim, “Growth and Characterization of Alternative Gate Dielectrics by Molecular-Beam Epitaxy,” ECS Transactions 16 (2008) 213-227.
J.M.J. Lopes, M. Roeckerath, T. Heeg, J. Schubert, U. Litmark, S. Mantl, A. Besmehn, P. Myllymäki, L. Niinistö, C. Adamo, and D.G. Schlom, “Amorphous Lanthanum Lutetium Oxide Thin Films as an Alternative High-k Material,” ECS Transactions 11 (2007) 311-318.
C.M. Osburn, S.A. Campbell, A. Demkov, E. Eisenbraun, E. Garfunkel, T. Gustafsson, A.I. Kingon, J. Lee, D.J. Lichtenwalner, G. Lucovsky, T.P. Ma, J.P. Maria, V. Misra, R.J. Nemanich, G.N. Parsons, D.G. Schlom, S. Stemmer, R.M. Wallace, and J. Whitten, “Materials and Processes for High k Gate Stacks: Results from the FEP Transition Center,” ECS Transactions 3 (2006) 389-415.
C.A. Billman, P.H. Tan, K.J. Hubbard, and D.G. Schlom, “Alternate Gate Oxides for Silicon MOSFETs using High‑K Dielectrics,” Ultrathin SiO2 and High-K Materials for ULSI Gate Dielectrics, edited by H.R. Huff, C.A. Richter, M.L. Green, G. Lucovsky, and T. Hattori, Vol. 567 (Materials Research Society, Warrendale, 1999), pp. 409-414.
K.J. Hubbard and D.G. Schlom, “Thermodynamic Stability of Binary Oxides in Contact with Silicon,” Epitaxial Oxide Thin Films II, edited by J.S. Speck, D.K. Fork, R.M. Wolf, and T. Shiosaki, Vol. 401 (Materials Research Society, Pittsburgh, 1996), pp. 33-38.
K.J. Hubbard and D.G. Schlom, “Thermodynamic Stability of Binary Oxides in Contact with Silicon,” Structure and Properties of Interfaces in Ceramics, edited by D.A. Bonnell, U. Chowdhry, and M. Rühle, Vol. 357 (Materials Research Society, Pittsburgh, 1995), pp. 331-336.
S. Datta and D.G. Schlom, “High-k Gate Dielectrics for Advanced CMOS,” Multifunctional Oxide Heterostructures edited by E.Y. Tsymbal, E.R.A. Dagotto, C.B. Eom, and R. Ramesh (Oxford University Press, Croydon, 2012), pp. 319-339.
D.G. Schlom, C.A. Billman, J.H. Haeni, J. Lettieri, P.H. Tan, R.R.M. Held, S. Völk, and K.J. Hubbard, “High-K Candidates for use as the Gate Dielectric in Silicon MOSFETs,” Thin Films and Heterostructures for Oxide Electronics, edited by S.B. Ogale (Springer, New York, 2005), pp. 31-78.