Oxides beyond SiO2 for MOSFETs Publications

S. Koveshnikov, C. Adamo, V. Tokranov, M. Yakimov, R. Kambhampati, M. Warusawithana, D.G. Schlom, W. Tsai, and S. Oktyabrsky, “Thermal Stability of Electrical and Structural Properties of GaAs-based Metal-Oxide-Semiconductor Capacitors with an Amorphous LaAlO3 Gate Oxide,” Applied Physics Letters 93 (2008) 012903-1 – 012903-3.

J. Schubert, O. Trithaveesak, W. Zander, M. Roeckerath, T. Heeg, H.Y. Chen, C.L. Jia, P. Meuffels, Y. Jia, and D.G. Schlom, “Characterization of Epitaxial Lanthanum Lutetium Oxide Thin Films Prepared by Pulsed-Laser Deposition,” Applied Physics A 90 (2008) 577-579.

N. Goel, W. Tsai, C.M. Garner, Y. Sun, P. Pianetta, M. Warusawithana, D.G. Schlom, H. Wen, C. Gaspe, J.C. Keay, M.B. Santos, L.V. Goncharova, E. Garfunkel, and T. Gustafsson, “Band Offsets between Amorphous LaAlO3 and In0.53Ga0.47As,” Applied Physics Letters 91 (2007) 113515-1 – 113515-3.

J.M.J. Lopes, M. Roeckerath, T. Heeg, U. Littmark, J. Schubert, S. Mantl, Y. Jia, and D.G. Schlom, “La-Based Ternary Rare-Earth Oxides as Alternative High-k Dielectrics,” Microelectronic Engineering 84 (2007) 1890-1893.

V.V. Afanas’ev, S. Shamuilia, M. Badylevich, A. Stesmans, L.F. Edge, W. Tian, D.G. Schlom, J.M.J. Lopes, M. Roeckerath, and J. Schubert, “Electronic Structure of Silicon Interfaces with Amorphous and Epitaxial Insulating Oxides:  Sc2O3, Lu2O3, LaLuO3,” Microelectronic Engineering 84 (2007) 2278-2281.

N. Goel, P. Majhi, W. Tsai, M. Warusawithana, D.G. Schlom, M.B. Santos, J.S. Harris, and Y. Nishi, “High-Indium-Content InGaAs Metal-Oxide-Semiconductor Capacitor with Amorphous LaAlO3 Gate Dielectric,” Applied Physics Letters 91 (2007) 093509-1 – 093509-3.

K. Clémer, A. Stesmans, V.V. Afanas’ev, L.F. Edge, and D.G. Schlom, “Paramagnetic Point Defects in (100) Si/LaAlO3 Structures:  Nature and Stability of the Interface,” Journal of Applied Physics 102 (2007) 034516-1 – 034516-7.

W. Cai, S.E. Stone, J.P. Pelz, L.F. Edge, and D.G. Schlom, “Conduction Band Energies and Hot-Electron Transport Characteristics of Epitaxial Sc2O3/Si (111) Studied by Ballistic Electron Emission Microscopy and Internal Photoemission,” Applied Physics Letters 91 (2007) 042901-1 – 042901-3.

K. Clémer, A. Stesmans, V.V. Afanas’ev, L.F. Edge, and D.G. Schlom, “Analysis of the (100)Si/LaAlO3 Structure by Electron Spin Resonance:  Nature of the Interface,” Journal of Materials Science:  Materials in Electronics 18 (2007) 735-741.

D.H. Choi, J.S. Harris, M. Warusawithana, and D.G. Schlom, “Annealing Condition Optimization and Electrical Characterization of Amorphous LaAlO3/GaAs Metal-Oxide-Semiconductor Capacitors,” Applied Physics Letters 90 (2007) 243505-1 – 243505-3.