Oxides beyond SiO2 for MOSFETs Publications

P. Sivasubramani, M.J. Kim, B.E. Gnade, R.M. Wallace, L.F. Edge, D.G. Schlom, H.S. Craft, and J.-P. Maria, “Outdiffusion of La and Al from Amorphous LaAlO3 in Direct Contact with Si (001),” Applied Physics Letters 86 (2005) 201901-1 – 201901-3.

C. Zhao, T. Witters, B. Brijs, H. Bender, O. Richard, M. Caymax, T. Heeg, J. Schubert, V.V. Afanas’ev, A. Stesmans, and D.G. Schlom, “Ternary Rare-Earth Metal Oxide High-k Layers on Silicon Oxide,” Applied Physics Letters 86 (2005) 132903-1 – 132903-3.

D.O. Klenov, L.F. Edge, D.G. Schlom, and S. Stemmer, “Extended Defects in Epitaxial Sc2O3 Films Grown on (111) Si,” Applied Physics Letters 86 (2005) 051901-1 – 051901-3.

V.V. Afanas’ev, A. Stesmans, C. Zhao, M. Caymax, T. Heeg, J. Schubert, Y. Jia, D.G. Schlom, and G. Lucovsky, “Band Alignment between (100)Si and Complex Rare Earth/Transition Metal Oxides,” Applied Physics Letters 85 (2004) 5917-5919.

L.F. Edge, D.G. Schlom, R.T. Brewer, Y.J. Chabal, J.R. Williams, S.A. Chambers, C. Hinkle, G. Lucovsky, Y. Yang, S. Stemmer, M. Copel, B. Holländer, and J. Schubert, “Suppression of Subcutaneous Oxidation during the Deposition of Amorphous Lanthanum Aluminate on Silicon,” Applied Physics Letters 84 (2004) 4629-4631.

C.M. Osburn, A. Kingon, G. Lucovsky, J.P. Maria, V. Misra, G. Parsons, S.A. Campbell, E. Eisenbraun, E. Garfunkel, T. Gustaffson, D.L. Kwong, J. Lee, T.P. Ma, D. Schlom, and S. Stemmer, “Materials and Processes for High‑K Gate Stacks,” Semiconductor Fabtech 22 (2004) 1-4.

G. Lucovsky, Y. Zhang, J.L. Whitten, D.G. Schlom, and J.L. Freeouf, “Separate and Independent Control of Interfacial Band Alignments and Dielectric Constants in Transition Metal Rare Earth Complex Oxides,” Microelectronic Engineering 72 (2004) 288-293.

S-G. Lim, S. Kriventsov, T.N. Jackson, J.H. Haeni, D.G. Schlom, A.M. Balbashov, R. Uecker, P. Reiche, J.L. Freeouf, and G. Lucovsky, “Dielectric Functions and Optical Bandgaps of High‑K Dielectrics for Metal-Oxide-Semiconductor Field-Effect Transistors by Far Ultraviolet Spectroscopic Ellipsometry,” Journal of Applied Physics 91 (2002) 4500-4505.

D.G. Schlom and J.H. Haeni, “A Thermodynamic Approach to Selecting Alternative Gate Dielectrics,” MRS Bulletin 27 (2002) 198-204.

K.J. Hubbard and D.G. Schlom, “Thermodynamic Stability of Binary Oxides in Contact with Silicon,” Journal of Materials Research 11 (1996) 2757-2776.