D.H. Choi, J.S. Harris, M. Warusawithana, and D.G. Schlom, “Annealing Condition Optimization and Electrical Characterization of Amorphous LaAlO3/GaAs Metal-Oxide-Semiconductor Capacitors,” Applied Physics Letters 90 (2007) 243505-1 – 243505-3.
Oxides beyond SiO2 for MOSFETs Publications
M. Wang, W. He, T.P. Ma, L.F. Edge, and D.G. Schlom, “Electron Tunneling Spectroscopy Study of Amorphous Films of the Gate Dielectric Candidates LaAlO3 and LaScO3,” Applied Physics Letters 90 (2007) 053502-1 – 053502-3.
P. Sivasubramani, T.H. Lee, M.J. Kim, J. Kim, B.E. Gnade, R.M. Wallace, L.F. Edge, D.G. Schlom, F.A. Stevie, R. Garcia, Z. Zhu, and D.P. Griffis, “Thermal Stability of Lanthanum Scandate Dielectrics on Si(100),” Applied Physics Letters 89 (2006) 242907-1 – 242907-3.
J.M.J. Lopes, M. Roeckerath, T. Heeg, E. Rije, J. Schubert, S. Mantl, V.V. Afanas’ev, S. Shamuilia, A. Stesmans, Y. Jia, and D.G. Schlom, “Amorphous Lanthanum Lutetium Oxide Thin Films as an Alternative High-k Gate Dielectric,” Applied Physics Letters 89 (2006) 222902-1 – 222902-3.
A. Stesmans, K. Clémer, V.V. Afanas’ev, L.F. Edge, and D.G. Schlom, “Nature and Stability of the (100)Si/LaAlO3 Interface Probed by Paramagnetic Defects,” Applied Physics Letters 89 (2006) 112121-1 – 112121-3.
V.V. Afanas’ev, A. Stesmans, R. Droopad, M. Passlack, L.F. Edge, and D.G. Schlom, “Electron Energy Barriers at Interfaces of GaAs(100) with LaAlO3 and Gd2O3,” Applied Physics Letters 89 (2006) 092103-1 – 092103-3.
L.F. Edge, D.G. Schlom, S. Rivillon, Y.J. Chabal, M.P. Agustin, S. Stemmer, T. Lee, M.J. Kim, H.S. Craft, J.-P. Maria, M.E. Hawley, B. Holländer, J. Schubert, and K. Eisenbeiser, “Thermal Stability of Amorphous LaScO3 Films on Silicon,” Applied Physics Letters 89 (2006) 062902-1 – 062902-3.
T. Heeg, J. Schubert, C. Buchal, E. Cicerrella, J.L. Freeouf, W. Tian, Y. Jia, and D.G. Schlom, “Growth and Properties of Epitaxial Rare-Earth Scandate Thin Films,” Applied Physics A 83 (2006) 103-106.
L.F. Edge, D.G. Schlom, P. Sivasubramani, R.M. Wallace, B. Holländer, and J. Schubert, “Electrical Characterization of Amorphous Lanthanum Aluminate Thin Films Grown by Molecular-Beam Deposition on Silicon,” Applied Physics Letters 88 (2006) 112907-1 – 112907-3.
V.V. Afanas’ev, A. Stesmans, L.F. Edge, D.G. Schlom, T. Heeg, and J. Schubert, “Band Alignment between (100) Si and Amorphous LaAlO3, LaScO3, and Sc2O3: Atomically Abrupt versus Interlayer-Containing Interfaces,” Applied Physics Letters 88 (2006) 032104-1 – 032104-3.