* = Undergraduate Researcher

PUBLICATIONS (listed in reverse chronological order)

1.  F.V.E. Hensling, P. Vogt, J. Park, S-L. Shang, H. Ye, Y-M. Wu, K. Smith, V. Show*, K. Azizie, H. Paik, D. Jena, H.G. Xing, Y.E. Suyolcu, P.A. van Aken, S. Datta, Z.K. Liu, and D.G Schlom, “Fully Transparent Epitaxial Oxide Thin-Film Transistor Fabricated at Back-End-of-Line Temperature by Suboxide Molecular-Beam Epitaxy,” Advanced Electronic Materials 10 (2024) 2400499.

2.  Q. Song, Z. He, B.D. Faeth, C.T. Parzyck, A. Scheid, C.J. Mowers, Y. Feng*, Q. Xu*, S. Hasko, J. Park, M.R. Barone, Y.E. Suyolcu, P.A. van Aken, B. Pamuk, C.J. Fennie, P.D.C. King, K.M. Shen, and D.G. Schlom, “Surface Reconstructions and Electronic Structure of Metallic Delafossite Thin Films,” APL Materials 12 (2024) 081117-1 – 081117-9.

3.  F.V.E. Hensling, D. Dahliah, M.A. Smeaton, B. Shrestha, V. Show*, C.T. Parzyck, C. Hennighausen, G.N. Kotsonis, G.-M. Rignanese, M.R. Barone, I. Subedi, A.S. Disa, K.M. Shen, B.D. Faeth, A.T. Bollinger, I. Božović, N.J. Podraza, L.F. Kourkoutis, G. Hautier, and D.G. Schlom, “Is Ba₃In₂O₆ a High-T_c Superconductor?,” Journal of Physics: Condensed Matter 36 (2024) 315602-1 – 315602-14.

4.  Y-C. Luo, A. Khanna, B. Grisafe, J. Sun, S. Dutta, L.E. Noskin*, C. Adamo, A.B. Mei, R.K. Ghosh, M. Colletta, M.E. Holtz, V. Gambin, L.F. Kourkoutis, S. Yu, D.G. Schlom, and S. Datta, “Correlated Oxide Selector for Cross-point Embedded Non-Volatile Memory,” IEEE Transactions on Electron Devices 71 (2024) 916–921.

5.  K. Azizie, F.V.E. Hensling, C.A. Gorsak, Y. Kim, N.A. Pieczulewski, D.M. Dryden, M.K.I. Senevirathna, S. Coye*, S-L. Shang, J. Steele, P. Vogt, N.A. Parker, Y.A. Birkhölzer, J.P. McCandless, D. Jena, H.G. Xing, Z.K. Liu, M.D. Williams, A.J. Green, K. Chabak, D.A. Muller, A.T. Neal, S. Mou, M.O. Thompson, H.P. Nair, and D.G. Schlom, “Silicon-Doped β-Ga₂O₃ Films Grown at 1 μm/h by Suboxide Molecular-Beam Epitaxy,” APL Materials 11 (2023) 041102-1 – 041102-12.

6.  T. Schwaigert, S. Salmani-Rezaie, M.R. Barone, H. Paik, E. Ray*, M.D. Williams, D.A. Muller, D.G. Schlom, and K. Ahadi, “Molecular Beam Epitaxy of KTaO₃,” Journal of Vacuum Science and Technology A 41 (2023) 022703-1 – 022703-6.

7.  M.R. Barone, C. Du, L. Radosavljevic*, D. Werder, X.Q. Pan, and D.G. Schlom, “Epitaxial Synthesis of a Vertically Aligned Two-Dimensional van der Waals Crystal: (110)-Oriented SnO,” Crystal Growth & Design 22 (2022) 7248–7254.

8.  F.V.E. Hensling, M.A. Smeaton, V. Show*, K. Azizie, M.R. Barone, L.F. Kourkoutis, and D.G. Schlom, “Epitaxial Growth of the First Two Members of the Ba_n+1In_nO_2.5n+1 Ruddlesden-Popper Homologous Series,” Journal of Vacuum Science and Technology A 40 (2022) 062707-1 – 062707-8.

9.  Q. Song, J. Sun, C.T. Parzyck, L. Miao, Q. Xu*, F.V.E. Hensling, M.R. Barone, C. Hu, J. Kim, B.D. Faeth, H. Paik, P.D.C. King, K.M. Shen, and D.G. Schlom, “Growth of PdCoO₂ Films with Controlled Termination by Molecular-Beam Epitaxy and Determination of their Electronic Structure by Angle-Resolved Photoemission Spectroscopy,” APL Materials 10 (2022) 091113-1 – 091113-9.

10.  J.N. Nelson, N.J. Schreiber, A.B. Georgescu, B.H. Goodge, B.D. Faeth, C.T. Parzyck, C. Zeledon*, L.F. Kourkoutis, A.J. Millis, A. Georges, D.G. Schlom, and K.M. Shen, “Interfacial Charge Transfer and Persistent Metallicity of Ultrathin SrIrO₃/SrRuO₃ Heterostructures,” Science Advances 8 (2022) eabj0481-1 – eabj0481-7.

11.  R. Held, J.A. Mundy, M.E. Holtz, D. Hodash*, T. Mairoser, D.A. Muller, and D.G. Schlom, “Fabrication of Chemically and Structurally Abrupt Eu_1–xLa_xO/SrO/Si Interfaces and their Analysis by STEM-EELS,” Physical Review Materials 5 (2021) 124419. 

12.  P.B. Meisenheimer, R.A. Steinhardt, S.H. Sung, L.D. Williams, S. Zhuang, M.E. Nowakowski, S. Novakov, M.M. Torunbalci, B. Prasad, C.J. Zollner*, Z. Wang, N.M. Dawley, J. Schubert, A.H. Hunter, S. Manipatruni, D.E. Nikonov, I.A. Young, L.Q. Chen, J. Bokor, S.A. Bhave, R. Ramesh, J.-M. Hu, E. Kioupakis, R. Hovden, D.G. Schlom, and J.T. Heron, “Engineering New Limits to Magnetostriction through Metastability in Iron-Gallium Alloys,” Nature Communications 12 (2021) 2757-1 – 2757-8.

13.  F.V.E. Hensling, D. Dahliah, P. Dulal, P. Singleton*, J. Sun, J. Schubert, H. Paik, I. Subedi, B. Subedi, G-M. Rignanese, N.J. Podraza, G. Hautier, and D.G. Schlom, “Epitaxial Stannate Pyrochlore Thin Films: Limitations of Cation Stoichiometry and Electron Doping,” APL Materials 9 (2021) 051113-1 – 051113-13.

14.  X. Zheng, E. Gerber, J. Park, D. Werder, O. Kigner*, E.-A. Kim, S. Xie, and D.G. Schlom, “Utilizing Complex Oxide Substrates to Control Carrier Concentration in Large-Area Monolayer MoS₂ Films,” Applied Physics Letters 118 (2021) 093103-1 – 093103-6.

15.  R. Held, T. Mairoser, A. Melville, J.A. Mundy, M.E. Holtz, D. Hodash*, Z. Wang, J.T. Heron, S.T. Dacek*, B. Holländer, D.A. Muller, and D.G. Schlom, “Exploring the Intrinsic Limit of the Charge-Carrier-Induced Increase of the Curie Temperature of Lu- and La-doped EuO Thin Films,” Physical Review Materials 4 (2020) 104412-1 – 104412-8.

16.  K.M. Adkison*, S-L. Shang, B.J. Bocklund, D. Klimm, D.G. Schlom, and Z.K. Liu, “Suitability of Binary Oxides for Molecular-Beam Epitaxy Source Materials: A Comprehensive Thermodynamic Analysis,” APL Materials 8 (2020) 081110-1 – 081110-18.

17.  L. Miao, N.J. Schreiber, H.P. Nair, B.H. Goodge, S. Jiang, J.P. Ruf, Y. Lee, M. Fu, B. Tsang, Y. Li, C. Zeledon*, J. Shan, K.F. Mak, L.F. Kourkoutis, D.G. Schlom, and K.M. Shen, “Strain Relaxation Induced Transverse Resistivity Anomalies in SrRuO₃Thin Films,” Physical Review B 102 (2020) 064406-1 – 064406-6.

18.  A.B. Mei, S. Saremi, L. Miao, M. Barone, Y. Tang, C. Zeledon*, J. Schubert, D.C. Ralph, L.W. Martin, and D.G. Schlom, “Ferroelectric Properties of Ion-irradiated Bismuth Ferrite Layers Grown via Molecular-beam Epitaxy,” APL Materials 7(2019) 111101-1 – 111101-6.

19.  A.B. Mei, L. Miao, M.J. Wahila, G. Khalsa, Z. Wang, M. Barone, N.J. Schreiber, L.E. Noskin*, H. Paik, T.E. Tiwald, Q. Zheng, R.T. Haasch, D.G. Sangiovanni, L.F.J. Piper, and D.G. Schlom, “Adsorption-Controlled Growth and Properties of Epitaxial SnO Films,” Physical Review Materials 3 (2019) 105202-1 – 105202-6.

20.  J.N. Nelson, J.P. Ruf, Y. Lee, C. Zeledon*, J.K. Kawasaki, S. Moser, C. Jozwiak, E. Rotenberg, A. Bostwick, D.G. Schlom, K.M. Shen, and L. Moreschini, “Dirac Nodal Lines Protected Against Spin-Orbit Interaction in IrO₂,” Physical Review Materials 3 (2019) 064205-1 – 064205-7.

   

21.  H.P. Nair, J.P. Ruf, N.J. Schreiber, L. Miao, M.L. Grandon*, D.J. Baek, B.H. Goodge, J.P.C. Ruff, L.F. Kourkoutis, K.M. Shen, and D.G. Schlom, “Demystifying the Growth of Superconducting Sr₂RuO₄ Thin Films,” APL Materials 6 (2018) 101108-1 – 101108-6.

22.  J.K. Kawasaki, C.H. Kim, J.N. Nelson, S. Crisp, C.J. Zollner*, E. Bigenwald*, J.T. Heron, C.J. Fennie, D.G. Schlom, and K.M. Shen, “Engineering Carrier Effective Masses in Ultrathin Quantum Wells of IrO₂,” Physical Review Letters 121 (2018) 176802-1 – 176802-6.

23.  Z. Wang, H.P. Nair, G.C. Correa, J. Jeong, K. Lee, E.S. Kim, A. Seidner H.*, C.S. Lee, H.J. Lim, D.A. Muller, and D.G. Schlom, “Epitaxial Integration and Properties of SrRuO₃ on Silicon,”APL Materials 6 (2018) 086101-1 – 086101-10.

24.  H. Paik, Z. Chen, E. Lochocki, A. Seidner H.*, A. Verma, N. Tanen, J. Park, M. Uchida, S.L. Shang, B-C. Zhou, M. Brützam, R. Uecker, Z.K. Liu, D. Jena, K.M. Shen, D.A. Muller, and D.G. Schlom, “Adsorption-Controlled Growth of La-doped BaSnO₃ by Molecular-Beam Epitaxy,” APL Materials 5 (2017) 116107-1 – 116107-11.

25.  L.E. Noskin*, A. Seidner H.*, and D.G. Schlom, “Growth of NbO₂ by Molecular-Beam Epitaxy and Characterization of its Metal-Insulator Transition,” MRS Advances 2 (2017) 3031–3036.

26.  H. Paik, J.A. Moyer, T. Spila, J.W. Tashman*, J.A. Mundy, E. Freeman, N. Shukla, J.M. Lapano, R. Engel-Herbert, W. Zander, J. Schubert, D.A. Muller, S. Datta, P. Schiffer, and D.G. Schlom, “Transport Properties of Ultra-Thin VO₂ Films on (001) TiO₂ Grown by Reactive Molecular-Beam Epitaxy,” Applied Physics Letters 107 (2015) 163101-1 – 163101-5.

27.  T. Mairoser, J.A. Mundy, A. Melville, D. Hodash*, P. Cueva, R. Held, A. Glavic, J. Schubert, D.A. Muller, D.G. Schlom, and A. Schmehl, “High-Quality EuO Thin Films the Easy Way via Topotactic Transformation,” Nature Communications 6 (2015) 7716.

28.  J.A. Mundy, D. Hodash*, A. Melville, R. Held, T. Mairoser, D.A. Muller, L.F. Kourkoutis, A. Schmehl, and D.G. Schlom, “Hetero-Epitaxial EuO Interfaces Studied by Analytic Electron Microscopy,” Applied Physics Letters 104 (2014) 091601-1 – 091601-5.

29.  J.W. Tashman*, J.H. Lee, H. Paik, J.A. Moyer, R. Misra, J.A. Mundy, T. Spila, T.A. Merz*, J. Schubert, D.A. Muller, P. Schiffer, and D.G. Schlom, “Epitaxial Growth of VO₂ by Periodic Annealing,” Applied Physics Letters 104 (2014) 063104-1 – 063104-5.

30.  N.F. Quackenbush, J.W. Tashman*, J.A. Mundy, S. Sallis, H. Paik, R. Misra, J.A. Moyer, J.-H. Guo, D.A. Fischer, J.C. Woicik, D.A. Muller, D.G. Schlom, and L.F.J. Piper, “Nature of the Metal Insulator Transition in Ultrathin Epitaxial Vanadium Dioxide,” Nano Letters 13 (2013) 4857-4861.

31.  S. Stoughton*, M. Showak*, Q. Mao, P. Koirala, D.A. Hillsberry, S. Sallis, L.F. Kourkoutis, K. Nguyen, L.F.J. Piper, D.A. Tenne, N.J. Podraza, D.A. Muller, C. Adamo, and D.G. Schlom, “Adsorption-Controlled Growth of BiVO₄ by Molecular-Beam Epitaxy,” APL Materials 1 (2013) 042112-1 – 042112-8.

32.  C.H. Lee, N.D. Orloff, T. Birol, Y. Zhu, V. Goian, E. Rocas, R. Haislmaier, E. Vlahos, J.A. Mundy, L.F. Kourkoutis, Y. Nie, M.D. Biegalski, J. Zhang*, M. Bernhagen, N.A. Benedek, Y. Kim, J.D. Brock, R. Uecker, X.X. Xi, V. Gopalan, D. Nuzhnyy, S. Kamba, D.A. Muller, I. Takeuchi, J.C. Booth, C.J. Fennie, and D.G. Schlom, “Exploiting Dimensionality and Defect Mitigation to Create Tunable Microwave Dielectrics,” Nature 502 (2013) 532-536.

33.  S. Coh, T. Heeg, J.H. Haeni, M.D. Biegalski, J. Lettieri, L.F. Edge, K.E. O’Brien*, M. Bernhagen, P. Reiche, R. Uecker, S. Trolier-McKinstry, D.G. Schlom, and D. Vanderbilt, “Si-Compatible Candidates for High-k Dielectrics with the Pbnm Perovskite Structure,” Physical Review B 82 (2010) 064101-1 – 064101-16.

34.  M.A. Zurbuchen, R.S. Freitas, M.J. Wilson, P. Schiffer, M. Roeckerath, J. Schubert, M.D. Biegalski, G.H. Mehta*, D.J. Comstock*, J.H. Lee, Y. Jia, and D.G. Schlom, “Synthesis and Characterization of an n = 6 Aurivillius Phase Incorporating Magnetically Active Manganese, Bi₇(Mn,Ti)₆O₂₁,” Applied Physics Letters 91 (2007) 033113-1 – 033113-3.

35.  M.A. Zurbuchen, W. Tian, X.Q. Pan, D. Fong, S.K. Streiffer, M.E. Hawley, J. Lettieri, Y. Jia, G. Asayama, S.J. Fulk*, D.J. Comstock*, S. Knapp, A.H. Carim, and D.G. Schlom, “Morphology, Structure, and Nucleation of Out-of-Phase Boundaries (OPBs) in Epitaxial Films of Layered Oxides,” Journal of Materials Research 22 (2007) 1439-1471.

36.  A.F. Moreira dos Santos, A.K. Cheetham, W. Tian, X.Q. Pan, Y. Jia, N.J. Murphy*, J. Lettieri, and D.G. Schlom, “Epitaxial Growth and Properties of Metastable BiMnO₃ Thin Films,” Applied Physics Letters 84 (2004) 91-93.

37.  M.A. Zurbuchen, Y. Jia, S. Knapp*, A.H. Carim, D.G. Schlom, and X.Q. Pan, “Defect Generation by Preferred Nucleation in Epitaxial Sr₂RuO₄ / LaAlO₃,” Applied Physics Letters 83 (2003) 3891-3893.

38.  M.A. Zurbuchen, J. Lettieri, S.J. Fulk*, Y. Jia, A.H. Carim, D.G. Schlom, and S.K. Streiffer, “Bismuth Volatility Effects on the Perfection of SrBi₂Nb₂O₉ and SrBi₂Ta₂O₉ Films,” Applied Physics Letters 82 (2003) 4711-4713.

39.  M.A. Zurbuchen, Y. Jia, S. Knapp*, A.H. Carim, D.G. Schlom, L.‑N. Zou, and Y. Liu, “Suppression of Superconductivity by Crystallographic Defects in Epitaxial Sr₂RuO₄ Films,” Applied Physics Letters 78 (2001) 2351-2353.

40.  M.K. Lee, C.B. Eom, J. Lettieri, I.W. Scrymgeour*, D.G. Schlom, W. Tian, X.Q. Pan, P.A. Ryan, and F. Tsui, “Epitaxial Thin Films of Hexagonal BaRuO₃ on (001) SrTiO₃,” Applied Physics Letters 78 (2001) 329-331.

41.  J. Lettieri, Y. Jia, S.J. Fulk*, D.G. Schlom, M.E. Hawley, and G.W. Brown, “Optimization of the Growth of Epitaxial SrBi₂Ta₂O₉ Thin Films by Pulsed Laser Deposition,” Thin Solid Films 379 (2000) 64-71.

42.  J. Lettieri, I.W. Scrymgeour*, D.G. Schlom, M.K. Lee, and C.B. Eom, “Comment on ‘Lattice Deformation and Magnetic Properties in Epitaxial Thin Films of Sr_1‑xBa_xRuO₃’ [Appl. Phys. Lett. 73, 1200 (1999)],” Applied Physics Letters 77 (2000) 600-601.

43.  C.A. Billman, P.H. Tan*, K.J. Hubbard*, and D.G. Schlom, “Alternate Gate Oxides for Silicon MOSFETs using High‑K Dielectrics,” in:  Ultrathin SiO₂ and High-K Materials for ULSI Gate Dielectrics, edited by H.R. Huff, C.A. Richter, M.L. Green, G. Lucovsky, and T. Hattori, Vol. 567 (Materials Research Society, Warrendale, 1999), pp. 409-414.

44.  Y. Jia, M.A. Zurbuchen, S. Wozniak*, A.H. Carim, D.G. Schlom, L‑N. Zou, S. Briczinski, and Y. Liu, “Epitaxial Growth of Metastable Ba₂RuO₄ Films with the K₂NiF₄ Structure,” Applied Physics Letters 74 (1999) 3830-3832.

45.  D.G. Schlom, Y. Jia, L.‑N. Zou, J.H. Haeni, S. Briczinski, M.A. Zurbuchen, C.W. Leitz*, S. Madhavan, S. Wozniak*, Y. Liu, M.E. Hawley, G.W. Brown, A. Dabkowski, H.A. Dabkowska, R. Uecker, and P. Reiche, “Searching for superconductivity in epitaxial films of copper-free layered oxides with the K₂NiF₄ structure,” in:  Superconducting and Related Oxides:  Physics and Nanoengineering III, edited by D. Pavuna and I. Bozovic, SPIE Vol. 3481 (SPIE, Bellingham, 1998), pp. 226-240.

46.  J. Lettieri, Y. Jia, M. Urbanik*, C.I. Weber*, J-P. Maria, D.G. Schlom, H. Li, R. Ramesh, R. Uecker, and P. Reiche, “Epitaxial Growth of (001)-Oriented and (110)-Oriented SrBi₂Ta₂O₉ Thin Films,” Applied Physics Letters 73 (1998) 2923-2925.

47.  J. Lettieri, C.I. Weber*, and D.G. Schlom, “Comment on ‘Control of epitaxial growth for SrBi₂Ta₂O₉ thin films’ [Appl. Phys. Lett. 72, 665 (1998)],” Applied Physics Letters 73 (1998) 2057-2058.

48.  D.G. Schlom, S.B. Knapp*, S. Wozniak*, L-N. Zou, J. Park, Y. Liu, M.E. Hawley, G.W. Brown, A. Dabkowski, H.A. Dabkowska, R. Uecker, and P. Reiche, “Growth of Epitaxial (Sr,Ba)_n+1Ru_nO_3n+1 Films,” Superconductor Science and Technology 10 (1997) 891-895.

49.  D.G. Schlom, B.A. Merritt*, S. Madhavan, Y. Liu, M.E. Hawley, G.W. Brown, A. Dabkowski, H.A. Dabkowska, R. Uecker, and P. Reiche, “Epitaxial YBa₂Cu₃O_7‑d / Sr₂RuO₄ Heterostructures,” in:  Epitaxial Oxide Thin Films III, edited by D.G. Schlom, C.B. Eom, M.E. Hawley, C.M. Foster, and J.S. Speck, Vol. 474 (Materials Research Society, Pittsburgh, 1997), pp. 85-90.

50.  R.L. Goettler*, J.P. Maria, and D.G. Schlom, “Origin of the (110) Orientation of Y₂O₃ and CeO₂ Epitaxial Films Grown on (100) Silicon,” in:  Epitaxial Oxide Thin Films III, edited by D.G. Schlom, C.B. Eom, M.E. Hawley, C.M. Foster, and J.S. Speck, Vol. 474 (Materials Research Society, Pittsburgh, 1997), pp. 333-338.

51.  J.C. Clark*, J.P. Maria*, K.J. Hubbard*, and D.G. Schlom, “An Oxygen-Compatible Radiant Substrate Heater for Thin-Film Growth at Substrate Temperatures up to 1050 °C,” Review of Scientific Instruments 68 (1997) 2538-2541.

52.  S. Madhavan, J.A. Mitchell, T. Nemoto, S. Wozniak*, Ying Liu, D.G. Schlom, A. Dabkowski, and H.A. Dabkowska, “Growth of Epitaxial Sr₂RuO₄ Films and YBa₂Cu₃O_7‑d / Sr₂RuO₄ Heterostructures,” Journal of Crystal Growth 174 (1997) 417-423.

53.  C.J. Kraisinger, D.M. Fusina*, and D.G. Schlom, “Computer Simulation, Design,  and Characterization of a Nozzle for More Effective Delivery of Oxidizing Gases,” in: Epitaxial Oxide Thin Films II, edited by J.S. Speck, D.K. Fork, R.M. Wolf, and T. Shiosaki, Vol. 401 (Materials Research Society, Pittsburgh, 1996), pp. 387-392.

54.  J.L. Lacey* and D.G. Schlom, “c‑axis Oriented Lithium Niobate Films on (001) Magnesium Oxide by Pulsed Laser Deposition,” in: Epitaxial Oxide Thin Films II, edited by J.S. Speck, D.K. Fork, R.M. Wolf, and T. Shiosaki, Vol. 401 (Materials Research Society, Pittsburgh, 1996), pp. 393-398.

55.  K.J. Hubbard* and D.G. Schlom, “Thermodynamic Stability of Binary Oxides in Contact with Silicon,” in: Epitaxial Oxide Thin Films II, edited by J.S. Speck, D.K. Fork, R.M. Wolf, and T. Shiosaki, Vol. 401 (Materials Research Society, Pittsburgh, 1996), pp. 33-38.

56.  D.G. Schlom, E.S. Hellman, E.H. Hartford, Jr., C.B. Eom, J.C. Clark*, and J. Mannhart, “Origin of the ø ~ ±9° Peaks in YBa₂Cu₃O_7‑d Films Grown on Cubic Zirconia Substrates,” Journal of Materials Research 11 (1996) 1336-1348.

57.  K.J. Hubbard* and D.G. Schlom, “Thermodynamic Stability of Binary Oxides in Contact with Silicon,” Journal of Materials Research 11 (1996) 2757-2776.

58.  K.J. Hubbard* and D.G. Schlom, “Thermodynamic Stability of Binary Oxides in Contact with Silicon,” in:  Structure and Properties of Interfaces in Ceramics, edited by D.A. Bonnell, U. Chowdhry, and M. Rühle, Vol. 357 (Materials Research Society, Pittsburgh, 1995), pp. 331-336.

 

B​OOKS AND BOOK CHAPTERS

59.     D.G. Schlom, C.A. Billman, J.H. Haeni, J. Lettieri, P.H. Tan*, R.R.M. Held*, S. Völk*, and K.J. Hubbard*, “High-K Candidates for use as the Gate Dielectric in Silicon MOSFETs,” in:  Thin Films and Heterostructures for Oxide Electronics, edited by S.B. Ogale (Springer, New York, 2005), pp. 31-78.