* = Undergraduate Researcher

PUBLICATIONS (listed in reverse chronological order)

1.  Y.A. Birkhölzer, A.S. Park, N. Schnitzer, J.Z. Kaaret, B.Z. Gregory, T.A. Kraay*, T. Schwaigert, M.R. Barone, B.D. Faeth, F.V.E. Hensling, I.C.G. van den Bosch, E.M. Kiens, C. Baeumer, E. Bergamasco, M. Grüninger, A.V. Bordovalos, S. Chaulagain, N.J. Podraza, W. Tokarz, W. Tabis, M.J. Wahila, S. Sarker, C.J. Pollock, S-L. Shang, Z-K. Liu, N. Artrith, F.M.F. de Groot, N.A. Benedek, A. Singer, D.A. Muller, and D.G. Schlom, “Synthesis of Epitaxial TaO₂ Thin Films on Al₂O₃ by Suboxide Molecular-Beam Epitaxy and Thermal Laser Epitaxy,” APL Materials 14 (2026) 071106-1 – 071106-14.

2.  M. Ramesh, X. Li, S. Ojha, S. Husain, X. Guo, B. Gregory, P. Meisenheimer, P. Kumar, X. Lin, M. Congdon*, A. Singer, Z. Hong, L. Caretta, S. Kim, L.W. Martin, P. Stevenson, Y. Han, Z. Yao, R. Ramesh, and D.G. Schlom, “Evolution and Supression of Spin Cycloid in Epitaxial BiFeO₃ Thin Films,” Advanced Materials 38 (2026).

3.  M. Kubovsky*, Y.A. Birkhölzer, L.B. Mitrovic, H. Paik, G.R. Rossman, and D.G. Schlom, “Preparation and Evaluation of Alexandrite, Forsterite, and Topaz Substrates for the Epitaxial Growth of Rutile Oxides,” APL Materials 14 (2026) 031103-1 – 031103-14.

4.  D.F. Segedin, J. Kim, H. LaBollita, N.K. Taylor, K-Y. Baek, S.H. Sung, A.B. Turkiewicz, G.A. Pan, A.Y. Jiang, M. Bambrick-Santoyo, T. Schwaigert, C.K. Kim, A. Tenneti*, A.J. Grutter, S. Muramoto, A.T. N’Diaye, I. El Baggari, D.A. Walko, C.M. Brooks, A.S. Botana, D.G. Schlom, H. Zhou, and J.A. Mundy, “Topochemical Oxidation of Ruddlesden–Popper Nickelates Reveals Distinct Structural Family: Oxygen-Intercalated Layered Perovskites,” Journal of the American Chemical Society 148 (2026) 5873–5880.

5.  X. Huang, Q. Song, G. Gurung, D.A. Pharis, T.M.J. Cham, Y. Chen, R. Jain, M. Olszewski, Y. Feng*, A. El-Ghazaly, E.Y. Tsymbal, D.G. Schlom, and D.C. Ralph, “Turn-On of Current-Induced Spin Torque upon Non-Collinear Antiferromagnetic Ordering in Delafossite PdCrO₂,” Advanced Materials 37 (2025) e02670-1 – e02670-7.

6.  J. Steele, J. Chen*, T. Burrell, N.A. Pieczulewski, D. Bhattacharya, K. Smith, K. Gann, M.O. Thompson, H.G. Xing, D. Jena, D.A. Muller, M.D. Williams, M.K.I. Senevirathna, and D.G. Schlom, “Growth of Conductive Si-Doped α-Ga₂O₃ by Suboxide Molecular-Beam Epitaxy,” APL Materials 13 (2025) 101117-1 – 101117-14.

7.  S. Chae, S. Lee, A. Park, M.K.I. Senevirathna, Y. Feng*, V. Kanneboina, V-A. Ha, Y. Hu, C. Du, M. Barone, V. Protasenko, Y.E. Li, N. Podraza, K. Johnson, D. Jena, H.G. Xing, X.Q. Pan, K. Cho, F. Giustino, M.D. Williams, and D.G. Schlom, “Controlling the p-Type Conductivity of α-SnO Thin Films by Potassium Doping,” APL Materials 13 (2025) 101114-1 – 101114-13.

8.  T. Schwaigert, A. Barooni, B. Gregory, P. Malinowski, A. Tenneti*, S. Hasko*, B. Palazzolo, J.W Hodgson, B. Faeth, P.M. Woodward, K.M. Shen, A. Singer, M. Ghazisaeidi, S. Salmani-Rezaie, D.G. Schlom, K. Ahadi, “Synthesis and Electronic Structure of the Fractionally Occupied Double Perovskite EuTa₂O₆ with Ordered Europium Vacancies,” Advanced Functional Materials 35 (2025) e13656-1 – e13656-10.

9.  F.V.E. Hensling, P. Vogt, J. Park, S-L. Shang, H. Ye, Y-M. Wu, K. Smith, V. Show*, K. Azizie, H. Paik, D. Jena, H.G. Xing, Y.E. Suyolcu, P.A. van Aken, S. Datta, Z.K. Liu, and D.G Schlom, “Fully Transparent Epitaxial Oxide Thin-Film Transistor Fabricated at Back-End-of-Line Temperature by Suboxide Molecular-Beam Epitaxy,” Advanced Electronic Materials 10 (2024) 2400499.

10.  Q. Song, Z. He, B.D. Faeth, C.T. Parzyck, A. Scheid, C.J. Mowers, Y. Feng*, Q. Xu*, S. Hasko*, J. Park, M.R. Barone, Y.E. Suyolcu, P.A. van Aken, B. Pamuk, C.J. Fennie, P.D.C. King, K.M. Shen, and D.G. Schlom, “Surface Reconstructions and Electronic Structure of Metallic Delafossite Thin Films,” APL Materials 12 (2024) 081117-1 – 081117-9.

11.  F.V.E. Hensling, D. Dahliah, M.A. Smeaton, B. Shrestha, V. Show*, C.T. Parzyck, C. Hennighausen, G.N. Kotsonis, G.-M. Rignanese, M.R. Barone, I. Subedi, A.S. Disa, K.M. Shen, B.D. Faeth, A.T. Bollinger, I. Božović, N.J. Podraza, L.F. Kourkoutis, G. Hautier, and D.G. Schlom, “Is Ba₃In₂O₆ a High-T_c Superconductor?,” Journal of Physics: Condensed Matter 36 (2024) 315602-1 – 315602-14.

12.  Y-C. Luo, A. Khanna, B. Grisafe, J. Sun, S. Dutta, L.E. Noskin*, C. Adamo, A.B. Mei, R.K. Ghosh, M. Colletta, M.E. Holtz, V. Gambin, L.F. Kourkoutis, S. Yu, D.G. Schlom, and S. Datta, “Correlated Oxide Selector for Cross-point Embedded Non-Volatile Memory,” IEEE Transactions on Electron Devices 71 (2024) 916–921.

13.  K. Azizie, F.V.E. Hensling, C.A. Gorsak, Y. Kim, N.A. Pieczulewski, D.M. Dryden, M.K.I. Senevirathna, S. Coye*, S-L. Shang, J. Steele, P. Vogt, N.A. Parker, Y.A. Birkhölzer, J.P. McCandless, D. Jena, H.G. Xing, Z.K. Liu, M.D. Williams, A.J. Green, K. Chabak, D.A. Muller, A.T. Neal, S. Mou, M.O. Thompson, H.P. Nair, and D.G. Schlom, “Silicon-Doped β-Ga₂O₃ Films Grown at 1 μm/h by Suboxide Molecular-Beam Epitaxy,” APL Materials 11 (2023) 041102-1 – 041102-12.

14.  T. Schwaigert, S. Salmani-Rezaie, M.R. Barone, H. Paik, E. Ray*, M.D. Williams, D.A. Muller, D.G. Schlom, and K. Ahadi, “Molecular Beam Epitaxy of KTaO₃,” Journal of Vacuum Science and Technology A 41 (2023) 022703-1 – 022703-6.

15.  M.R. Barone, C. Du, L. Radosavljevic*, D. Werder, X.Q. Pan, and D.G. Schlom, “Epitaxial Synthesis of a Vertically Aligned Two-Dimensional van der Waals Crystal: (110)-Oriented SnO,” Crystal Growth & Design 22 (2022) 7248–7254.

16.  F.V.E. Hensling, M.A. Smeaton, V. Show*, K. Azizie, M.R. Barone, L.F. Kourkoutis, and D.G. Schlom, “Epitaxial Growth of the First Two Members of the Ba_n+1In_nO_2.5n+1 Ruddlesden-Popper Homologous Series,” Journal of Vacuum Science and Technology A 40 (2022) 062707-1 – 062707-8.

17.  Q. Song, J. Sun, C.T. Parzyck, L. Miao, Q. Xu*, F.V.E. Hensling, M.R. Barone, C. Hu, J. Kim, B.D. Faeth, H. Paik, P.D.C. King, K.M. Shen, and D.G. Schlom, “Growth of PdCoO₂ Films with Controlled Termination by Molecular-Beam Epitaxy and Determination of their Electronic Structure by Angle-Resolved Photoemission Spectroscopy,” APL Materials 10 (2022) 091113-1 – 091113-9.

18.  J.N. Nelson, N.J. Schreiber, A.B. Georgescu, B.H. Goodge, B.D. Faeth, C.T. Parzyck, C. Zeledon*, L.F. Kourkoutis, A.J. Millis, A. Georges, D.G. Schlom, and K.M. Shen, “Interfacial Charge Transfer and Persistent Metallicity of Ultrathin SrIrO₃/SrRuO₃ Heterostructures,” Science Advances 8 (2022) eabj0481-1 – eabj0481-7.

19.  R. Held, J.A. Mundy, M.E. Holtz, D. Hodash*, T. Mairoser, D.A. Muller, and D.G. Schlom, “Fabrication of Chemically and Structurally Abrupt Eu_1–xLa_xO/SrO/Si Interfaces and their Analysis by STEM-EELS,” Physical Review Materials 5 (2021) 124419. 

20.  P.B. Meisenheimer, R.A. Steinhardt, S.H. Sung, L.D. Williams, S. Zhuang, M.E. Nowakowski, S. Novakov, M.M. Torunbalci, B. Prasad, C.J. Zollner*, Z. Wang, N.M. Dawley, J. Schubert, A.H. Hunter, S. Manipatruni, D.E. Nikonov, I.A. Young, L.Q. Chen, J. Bokor, S.A. Bhave, R. Ramesh, J.-M. Hu, E. Kioupakis, R. Hovden, D.G. Schlom, and J.T. Heron, “Engineering New Limits to Magnetostriction through Metastability in Iron-Gallium Alloys,” Nature Communications 12 (2021) 2757-1 – 2757-8.

21.  F.V.E. Hensling, D. Dahliah, P. Dulal, P. Singleton*, J. Sun, J. Schubert, H. Paik, I. Subedi, B. Subedi, G-M. Rignanese, N.J. Podraza, G. Hautier, and D.G. Schlom, “Epitaxial Stannate Pyrochlore Thin Films: Limitations of Cation Stoichiometry and Electron Doping,” APL Materials 9 (2021) 051113-1 – 051113-13.

22.  X. Zheng, E. Gerber, J. Park, D. Werder, O. Kigner*, E.-A. Kim, S. Xie, and D.G. Schlom, “Utilizing Complex Oxide Substrates to Control Carrier Concentration in Large-Area Monolayer MoS₂ Films,” Applied Physics Letters 118 (2021) 093103-1 – 093103-6.

23.  R. Held, T. Mairoser, A. Melville, J.A. Mundy, M.E. Holtz, D. Hodash*, Z. Wang, J.T. Heron, S.T. Dacek*, B. Holländer, D.A. Muller, and D.G. Schlom, “Exploring the Intrinsic Limit of the Charge-Carrier-Induced Increase of the Curie Temperature of Lu- and La-doped EuO Thin Films,” Physical Review Materials 4 (2020) 104412-1 – 104412-8.

24.  K.M. Adkison*, S-L. Shang, B.J. Bocklund, D. Klimm, D.G. Schlom, and Z.K. Liu, “Suitability of Binary Oxides for Molecular-Beam Epitaxy Source Materials: A Comprehensive Thermodynamic Analysis,” APL Materials 8 (2020) 081110-1 – 081110-18.

25.  L. Miao, N.J. Schreiber, H.P. Nair, B.H. Goodge, S. Jiang, J.P. Ruf, Y. Lee, M. Fu, B. Tsang, Y. Li, C. Zeledon*, J. Shan, K.F. Mak, L.F. Kourkoutis, D.G. Schlom, and K.M. Shen, “Strain Relaxation Induced Transverse Resistivity Anomalies in SrRuO₃Thin Films,” Physical Review B 102 (2020) 064406-1 – 064406-6.

26.  A.B. Mei, S. Saremi, L. Miao, M. Barone, Y. Tang, C. Zeledon*, J. Schubert, D.C. Ralph, L.W. Martin, and D.G. Schlom, “Ferroelectric Properties of Ion-irradiated Bismuth Ferrite Layers Grown via Molecular-beam Epitaxy,” APL Materials 7(2019) 111101-1 – 111101-6.

27.  A.B. Mei, L. Miao, M.J. Wahila, G. Khalsa, Z. Wang, M. Barone, N.J. Schreiber, L.E. Noskin*, H. Paik, T.E. Tiwald, Q. Zheng, R.T. Haasch, D.G. Sangiovanni, L.F.J. Piper, and D.G. Schlom, “Adsorption-Controlled Growth and Properties of Epitaxial SnO Films,” Physical Review Materials 3 (2019) 105202-1 – 105202-6.

28.  J.N. Nelson, J.P. Ruf, Y. Lee, C. Zeledon*, J.K. Kawasaki, S. Moser, C. Jozwiak, E. Rotenberg, A. Bostwick, D.G. Schlom, K.M. Shen, and L. Moreschini, “Dirac Nodal Lines Protected Against Spin-Orbit Interaction in IrO₂,” Physical Review Materials 3 (2019) 064205-1 – 064205-7.

   

29.  H.P. Nair, J.P. Ruf, N.J. Schreiber, L. Miao, M.L. Grandon*, D.J. Baek, B.H. Goodge, J.P.C. Ruff, L.F. Kourkoutis, K.M. Shen, and D.G. Schlom, “Demystifying the Growth of Superconducting Sr₂RuO₄ Thin Films,” APL Materials 6 (2018) 101108-1 – 101108-6.

30.  J.K. Kawasaki, C.H. Kim, J.N. Nelson, S. Crisp, C.J. Zollner*, E. Bigenwald*, J.T. Heron, C.J. Fennie, D.G. Schlom, and K.M. Shen, “Engineering Carrier Effective Masses in Ultrathin Quantum Wells of IrO₂,” Physical Review Letters 121 (2018) 176802-1 – 176802-6.

31.  Z. Wang, H.P. Nair, G.C. Correa, J. Jeong, K. Lee, E.S. Kim, A. Seidner H.*, C.S. Lee, H.J. Lim, D.A. Muller, and D.G. Schlom, “Epitaxial Integration and Properties of SrRuO₃ on Silicon,”APL Materials 6 (2018) 086101-1 – 086101-10.

32.  H. Paik, Z. Chen, E. Lochocki, A. Seidner H.*, A. Verma, N. Tanen, J. Park, M. Uchida, S.L. Shang, B-C. Zhou, M. Brützam, R. Uecker, Z.K. Liu, D. Jena, K.M. Shen, D.A. Muller, and D.G. Schlom, “Adsorption-Controlled Growth of La-doped BaSnO₃ by Molecular-Beam Epitaxy,” APL Materials 5 (2017) 116107-1 – 116107-11.

33.  L.E. Noskin*, A. Seidner H.*, and D.G. Schlom, “Growth of NbO₂ by Molecular-Beam Epitaxy and Characterization of its Metal-Insulator Transition,” MRS Advances 2 (2017) 3031–3036.

34.  H. Paik, J.A. Moyer, T. Spila, J.W. Tashman*, J.A. Mundy, E. Freeman, N. Shukla, J.M. Lapano, R. Engel-Herbert, W. Zander, J. Schubert, D.A. Muller, S. Datta, P. Schiffer, and D.G. Schlom, “Transport Properties of Ultra-Thin VO₂ Films on (001) TiO₂ Grown by Reactive Molecular-Beam Epitaxy,” Applied Physics Letters 107 (2015) 163101-1 – 163101-5.

35.  T. Mairoser, J.A. Mundy, A. Melville, D. Hodash*, P. Cueva, R. Held, A. Glavic, J. Schubert, D.A. Muller, D.G. Schlom, and A. Schmehl, “High-Quality EuO Thin Films the Easy Way via Topotactic Transformation,” Nature Communications 6 (2015) 7716.

36.  J.A. Mundy, D. Hodash*, A. Melville, R. Held, T. Mairoser, D.A. Muller, L.F. Kourkoutis, A. Schmehl, and D.G. Schlom, “Hetero-Epitaxial EuO Interfaces Studied by Analytic Electron Microscopy,” Applied Physics Letters 104 (2014) 091601-1 – 091601-5.

37.  J.W. Tashman*, J.H. Lee, H. Paik, J.A. Moyer, R. Misra, J.A. Mundy, T. Spila, T.A. Merz*, J. Schubert, D.A. Muller, P. Schiffer, and D.G. Schlom, “Epitaxial Growth of VO₂ by Periodic Annealing,” Applied Physics Letters 104 (2014) 063104-1 – 063104-5.

38.  N.F. Quackenbush, J.W. Tashman*, J.A. Mundy, S. Sallis, H. Paik, R. Misra, J.A. Moyer, J.-H. Guo, D.A. Fischer, J.C. Woicik, D.A. Muller, D.G. Schlom, and L.F.J. Piper, “Nature of the Metal Insulator Transition in Ultrathin Epitaxial Vanadium Dioxide,” Nano Letters 13 (2013) 4857-4861.

39.  S. Stoughton*, M. Showak*, Q. Mao, P. Koirala, D.A. Hillsberry, S. Sallis, L.F. Kourkoutis, K. Nguyen, L.F.J. Piper, D.A. Tenne, N.J. Podraza, D.A. Muller, C. Adamo, and D.G. Schlom, “Adsorption-Controlled Growth of BiVO₄ by Molecular-Beam Epitaxy,” APL Materials 1 (2013) 042112-1 – 042112-8.

40.  C.H. Lee, N.D. Orloff, T. Birol, Y. Zhu, V. Goian, E. Rocas, R. Haislmaier, E. Vlahos, J.A. Mundy, L.F. Kourkoutis, Y. Nie, M.D. Biegalski, J. Zhang*, M. Bernhagen, N.A. Benedek, Y. Kim, J.D. Brock, R. Uecker, X.X. Xi, V. Gopalan, D. Nuzhnyy, S. Kamba, D.A. Muller, I. Takeuchi, J.C. Booth, C.J. Fennie, and D.G. Schlom, “Exploiting Dimensionality and Defect Mitigation to Create Tunable Microwave Dielectrics,” Nature 502 (2013) 532-536.

41.  S. Coh, T. Heeg, J.H. Haeni, M.D. Biegalski, J. Lettieri, L.F. Edge, K.E. O’Brien*, M. Bernhagen, P. Reiche, R. Uecker, S. Trolier-McKinstry, D.G. Schlom, and D. Vanderbilt, “Si-Compatible Candidates for High-k Dielectrics with the Pbnm Perovskite Structure,” Physical Review B 82 (2010) 064101-1 – 064101-16.

42.  M.A. Zurbuchen, R.S. Freitas, M.J. Wilson, P. Schiffer, M. Roeckerath, J. Schubert, M.D. Biegalski, G.H. Mehta*, D.J. Comstock*, J.H. Lee, Y. Jia, and D.G. Schlom, “Synthesis and Characterization of an n = 6 Aurivillius Phase Incorporating Magnetically Active Manganese, Bi₇(Mn,Ti)₆O₂₁,” Applied Physics Letters 91 (2007) 033113-1 – 033113-3.

43.  M.A. Zurbuchen, W. Tian, X.Q. Pan, D. Fong, S.K. Streiffer, M.E. Hawley, J. Lettieri, Y. Jia, G. Asayama, S.J. Fulk*, D.J. Comstock*, S. Knapp, A.H. Carim, and D.G. Schlom, “Morphology, Structure, and Nucleation of Out-of-Phase Boundaries (OPBs) in Epitaxial Films of Layered Oxides,” Journal of Materials Research 22 (2007) 1439-1471.

44.  A.F. Moreira dos Santos, A.K. Cheetham, W. Tian, X.Q. Pan, Y. Jia, N.J. Murphy*, J. Lettieri, and D.G. Schlom, “Epitaxial Growth and Properties of Metastable BiMnO₃ Thin Films,” Applied Physics Letters 84 (2004) 91-93.

45.  M.A. Zurbuchen, Y. Jia, S. Knapp*, A.H. Carim, D.G. Schlom, and X.Q. Pan, “Defect Generation by Preferred Nucleation in Epitaxial Sr₂RuO₄ / LaAlO₃,” Applied Physics Letters 83 (2003) 3891-3893.

46.  M.A. Zurbuchen, J. Lettieri, S.J. Fulk*, Y. Jia, A.H. Carim, D.G. Schlom, and S.K. Streiffer, “Bismuth Volatility Effects on the Perfection of SrBi₂Nb₂O₉ and SrBi₂Ta₂O₉ Films,” Applied Physics Letters 82 (2003) 4711-4713.

47.  M.A. Zurbuchen, Y. Jia, S. Knapp*, A.H. Carim, D.G. Schlom, L.‑N. Zou, and Y. Liu, “Suppression of Superconductivity by Crystallographic Defects in Epitaxial Sr₂RuO₄ Films,” Applied Physics Letters 78 (2001) 2351-2353.

48.  M.K. Lee, C.B. Eom, J. Lettieri, I.W. Scrymgeour*, D.G. Schlom, W. Tian, X.Q. Pan, P.A. Ryan, and F. Tsui, “Epitaxial Thin Films of Hexagonal BaRuO₃ on (001) SrTiO₃,” Applied Physics Letters 78 (2001) 329-331.

49.  J. Lettieri, Y. Jia, S.J. Fulk*, D.G. Schlom, M.E. Hawley, and G.W. Brown, “Optimization of the Growth of Epitaxial SrBi₂Ta₂O₉ Thin Films by Pulsed Laser Deposition,” Thin Solid Films 379 (2000) 64-71.

50.  J. Lettieri, I.W. Scrymgeour*, D.G. Schlom, M.K. Lee, and C.B. Eom, “Comment on ‘Lattice Deformation and Magnetic Properties in Epitaxial Thin Films of Sr_1‑xBa_xRuO₃’ [Appl. Phys. Lett. 73, 1200 (1999)],” Applied Physics Letters 77 (2000) 600-601.

51.  C.A. Billman, P.H. Tan*, K.J. Hubbard*, and D.G. Schlom, “Alternate Gate Oxides for Silicon MOSFETs using High‑K Dielectrics,” in:  Ultrathin SiO₂ and High-K Materials for ULSI Gate Dielectrics, edited by H.R. Huff, C.A. Richter, M.L. Green, G. Lucovsky, and T. Hattori, Vol. 567 (Materials Research Society, Warrendale, 1999), pp. 409-414.

52.  Y. Jia, M.A. Zurbuchen, S. Wozniak*, A.H. Carim, D.G. Schlom, L‑N. Zou, S. Briczinski, and Y. Liu, “Epitaxial Growth of Metastable Ba₂RuO₄ Films with the K₂NiF₄ Structure,” Applied Physics Letters 74 (1999) 3830-3832.

53.  D.G. Schlom, Y. Jia, L.‑N. Zou, J.H. Haeni, S. Briczinski, M.A. Zurbuchen, C.W. Leitz*, S. Madhavan, S. Wozniak*, Y. Liu, M.E. Hawley, G.W. Brown, A. Dabkowski, H.A. Dabkowska, R. Uecker, and P. Reiche, “Searching for superconductivity in epitaxial films of copper-free layered oxides with the K₂NiF₄ structure,” in:  Superconducting and Related Oxides:  Physics and Nanoengineering III, edited by D. Pavuna and I. Bozovic, SPIE Vol. 3481 (SPIE, Bellingham, 1998), pp. 226-240.

54.  J. Lettieri, Y. Jia, M. Urbanik*, C.I. Weber*, J-P. Maria, D.G. Schlom, H. Li, R. Ramesh, R. Uecker, and P. Reiche, “Epitaxial Growth of (001)-Oriented and (110)-Oriented SrBi₂Ta₂O₉ Thin Films,” Applied Physics Letters 73 (1998) 2923-2925.

55.  J. Lettieri, C.I. Weber*, and D.G. Schlom, “Comment on ‘Control of epitaxial growth for SrBi₂Ta₂O₉ thin films’ [Appl. Phys. Lett. 72, 665 (1998)],” Applied Physics Letters 73 (1998) 2057-2058.

56.  D.G. Schlom, S.B. Knapp*, S. Wozniak*, L-N. Zou, J. Park, Y. Liu, M.E. Hawley, G.W. Brown, A. Dabkowski, H.A. Dabkowska, R. Uecker, and P. Reiche, “Growth of Epitaxial (Sr,Ba)_n+1Ru_nO_3n+1 Films,” Superconductor Science and Technology 10 (1997) 891-895.

57.  D.G. Schlom, B.A. Merritt*, S. Madhavan, Y. Liu, M.E. Hawley, G.W. Brown, A. Dabkowski, H.A. Dabkowska, R. Uecker, and P. Reiche, “Epitaxial YBa₂Cu₃O_7‑d / Sr₂RuO₄ Heterostructures,” in:  Epitaxial Oxide Thin Films III, edited by D.G. Schlom, C.B. Eom, M.E. Hawley, C.M. Foster, and J.S. Speck, Vol. 474 (Materials Research Society, Pittsburgh, 1997), pp. 85-90.

58.  R.L. Goettler*, J.P. Maria, and D.G. Schlom, “Origin of the (110) Orientation of Y₂O₃ and CeO₂ Epitaxial Films Grown on (100) Silicon,” in:  Epitaxial Oxide Thin Films III, edited by D.G. Schlom, C.B. Eom, M.E. Hawley, C.M. Foster, and J.S. Speck, Vol. 474 (Materials Research Society, Pittsburgh, 1997), pp. 333-338.

59.  J.C. Clark*, J.P. Maria*, K.J. Hubbard*, and D.G. Schlom, “An Oxygen-Compatible Radiant Substrate Heater for Thin-Film Growth at Substrate Temperatures up to 1050 °C,” Review of Scientific Instruments 68 (1997) 2538-2541.

60.  S. Madhavan, J.A. Mitchell, T. Nemoto, S. Wozniak*, Ying Liu, D.G. Schlom, A. Dabkowski, and H.A. Dabkowska, “Growth of Epitaxial Sr₂RuO₄ Films and YBa₂Cu₃O_7‑d / Sr₂RuO₄ Heterostructures,” Journal of Crystal Growth 174 (1997) 417-423.

61.  C.J. Kraisinger, D.M. Fusina*, and D.G. Schlom, “Computer Simulation, Design,  and Characterization of a Nozzle for More Effective Delivery of Oxidizing Gases,” in: Epitaxial Oxide Thin Films II, edited by J.S. Speck, D.K. Fork, R.M. Wolf, and T. Shiosaki, Vol. 401 (Materials Research Society, Pittsburgh, 1996), pp. 387-392.

62.  J.L. Lacey* and D.G. Schlom, “c‑axis Oriented Lithium Niobate Films on (001) Magnesium Oxide by Pulsed Laser Deposition,” in: Epitaxial Oxide Thin Films II, edited by J.S. Speck, D.K. Fork, R.M. Wolf, and T. Shiosaki, Vol. 401 (Materials Research Society, Pittsburgh, 1996), pp. 393-398.

63.  K.J. Hubbard* and D.G. Schlom, “Thermodynamic Stability of Binary Oxides in Contact with Silicon,” in: Epitaxial Oxide Thin Films II, edited by J.S. Speck, D.K. Fork, R.M. Wolf, and T. Shiosaki, Vol. 401 (Materials Research Society, Pittsburgh, 1996), pp. 33-38.

64.  D.G. Schlom, E.S. Hellman, E.H. Hartford, Jr., C.B. Eom, J.C. Clark*, and J. Mannhart, “Origin of the ø ~ ±9° Peaks in YBa₂Cu₃O_7‑d Films Grown on Cubic Zirconia Substrates,” Journal of Materials Research 11 (1996) 1336-1348.

65.  K.J. Hubbard* and D.G. Schlom, “Thermodynamic Stability of Binary Oxides in Contact with Silicon,” Journal of Materials Research 11 (1996) 2757-2776.

66.  K.J. Hubbard* and D.G. Schlom, “Thermodynamic Stability of Binary Oxides in Contact with Silicon,” in:  Structure and Properties of Interfaces in Ceramics, edited by D.A. Bonnell, U. Chowdhry, and M. Rühle, Vol. 357 (Materials Research Society, Pittsburgh, 1995), pp. 331-336.

 

B​OOKS AND BOOK CHAPTERS

67.     D.G. Schlom, C.A. Billman, J.H. Haeni, J. Lettieri, P.H. Tan*, R.R.M. Held*, S. Völk*, and K.J. Hubbard*, “High-K Candidates for use as the Gate Dielectric in Silicon MOSFETs,” in:  Thin Films and Heterostructures for Oxide Electronics, edited by S.B. Ogale (Springer, New York, 2005), pp. 31-78.