A. Schmehl, V. Vaithyanathan, A. Herrnberger, S. Thiel, C. Richter, M. Liberati, T. Heeg, M. Röckerath, L.F. Kourkoutis, S. Mühlbauer, P. Böni, D.A. Muller, Y. Barash, J. Schubert, Y. Idzerda, J. Mannhart, and D.G. Schlom, “Epitaxial Integration of the Highly Spin-Polarized Ferromagnetic Semiconductor EuO with Silicon and GaN,” Nature Materials 6 (2007) 882-887.
Integrating Functional Oxides with Semiconductors Publications
L.W. Martin, Y.-H. Chu, Q. Zhan, R. Ramesh, S.-J. Han, S.X. Wang, M. Warusawithana, and D.G. Schlom, “Room Temperature Exchange Bias and Spin Valves Based on BiFeO3/SrRuO3/SrTiO3/Si (001) Heterostructures,” Applied Physics Letters 91 (2007) 172513-1 – 172513-3.
S. Gsell, M. Fischer, R. Brescia, M. Schreck, P. Huber, F. Bayer, B. Stritzker, and D.G. Schlom, “Reduction of Mosaic Spread using Iridium Interlayers: A Route to Improved Oxide Heteroepitaxy on Silicon,” Applied Physics Letters 91 (2007) 061501-1 – 061501-3.
S.Y. Yang, Q. Zhan, P.L. Yang, M.P. Cruz, Y.H. Chu, R. Ramesh, Y.R. Wu, J. Singh, W. Tian, and D.G. Schlom, “Capacitance-Voltage Characteristics of BiFeO3/SrTiO3/GaN Heteroepitaxial Structures,” Applied Physics Letters 91 (2007) 022909-1 – 022909-3.
W. Tian, V. Vaithyanathan, D.G. Schlom, Q. Zhan, S.Y. Yang, Y.H. Chu, and R. Ramesh, “Epitaxial Integration of (0001) BiFeO3 with (0001) GaN,” Applied Physics Letters 90 (2007) 172908-1 – 172908-3.
V. Vaithyanathan, J. Lettieri, W. Tian, A. Kochhar, H. Ma, A. Sharan, A. Vasudevarao, V. Gopalan, Y. Li, L.Q. Chen, P. Zschack, J.C. Woicik, J. Levy, and D.G. Schlom, “c-Axis Oriented Epitaxial BaTiO3 Films on (001) Si,” Journal of Applied Physics 100 (2006) 024108-1 – 024108-9.
L.V. Goncharova, D.G. Starodub, E. Garfunkel, T. Gustafsson, V. Vaithyanathan, J. Lettieri, and D.G. Schlom, “Interface Structure and Thermal Stability of Epitaxial SrTiO3 Thin Films on Si (001),” Journal of Applied Physics 100 (2006) 014912-1 – 014912-6.
E.M. Campo, S. Nakahara, T. Hierl, J.C.M. Hwang, Y.P. Chen, G. Brill, N.K. Dhar, V. Vaithyanathan, D.G. Schlom, X.-M. Fang, and J.M. Fastenau, “Epitaxial Growth of CdTe on Si through Perovskite Oxide Buffers,” Journal of Electronic Materials 35 (2006) 1219-1223.
D.M. Kim, C.B. Eom, V. Nagarajan, J. Ouyang, R. Ramesh, V. Vaithyanathan, and D.G. Schlom, “Thickness Dependence of Structural and Piezoelectric Properties of Epitaxial Pb(Zr0.52Ti0.48)O3 Films on Si and SrTiO3 Substrates,” Applied Physics Letters 88 (2006) 142904-1 – 142904-3.
J.Q. He, C.L. Jia, V. Vaithyanathan, D.G. Schlom, J. Schubert, A. Gerber, H.H. Kohlstedt, and R.H. Wang, “Interfacial Reaction in the Growth of Epitaxial SrTiO3 Thin Films on (001) Si Substrates,” Journal of Applied Physics 97 (2005) 104921-1 – 104921-6.