Tuning the Electrical Properties of Unintentionally Doped Epitaxial p-Type α-SnO Thin Films while Maintaining a Shallow Hole Ionization Energy,

S. Lee, A.S. Park, E. Krysko, C.F.C. Chang, C. Du, V-A. Ha, F. Giustino, X.Q. Pan, D. Jena, H.G. Xing, and D.G. Schlom, “Tuning the Electrical Properties of Unintentionally Doped Epitaxial p-Type α-SnO Thin Films while Maintaining a Shallow Hole Ionization Energy,” APL Materials 14 (2026) 071103-1 – 071103-12.

071103_1_5.0332035.pdf