D.E. Nikonov, C-C. Lin, U.E. Avci, T.A. Gosavi, R. Kim, I.A. Young, H. Li, A.V. Penumatcha, R. Ramesh, and D.G. Schlom, “Technologies for Transistors with a Ferroelectric Gate Dielectric,” U.S. Patent #12,615,807 В2, granted April 28, 2026.
D.E. Nikonov, C-C. Lin, U.E. Avci, T.A. Gosavi, R. Kim, I.A. Young, H. Li, A.V. Penumatcha, R. Ramesh, and D.G. Schlom, “Technologies for Transistors with a Ferroelectric Gate Dielectric,” U.S. Patent #12,615,807 В2, granted April 28, 2026.
