Fully Transparent Epitaxial Oxide Thin-Film Transistor Fabricated at Back-End-of-Line Temperature by Suboxide Molecular-Beam Epitaxy

F.V.E. Hensling, P. Vogt, J. Park, S-L. Shang, H. Ye, Y-M. Wu, K. Smith, V. Show, K. Azizie, H. Paik, D. Jena, H.G. Xing, Y.E. Suyolcu, P.A. van Aken, S. Datta, Z.K. Liu, and D.G Schlom, “Fully Transparent Epitaxial Oxide Thin-Film Transistor Fabricated at Back-End-of-Line Temperature by Suboxide Molecular-Beam Epitaxy,” Advanced Electronic Materials 11 (2025) 2400499-1 – 2400499-14.