Silicon-Doped β-Ga2O3 Films Grown at 1 μm/h by Suboxide Molecular-Beam Epitaxy

K. Azizie, F.V.E. Hensling, C.A. Gorsak, Y. Kim, N.A. Pieczulewski, D.M. Dryden, M.K.I. Senevirathna, S. Coye, S-L. Shang, J. Steele, P. Vogt, N.A. Parker, Y.A. Birkhölzer, J.P. McCandless, D. Jena, H.G. Xing, Z.K. Liu, M.D. Williams, A.J. Green, K. Chabak, D.A. Muller, A.T. Neal, S. Mou, M.O. Thompson, H.P. Nair, and D.G. Schlom, “Silicon-Doped β-Ga2O3 Films Grown at 1 μm/h by Suboxide Molecular-Beam Epitaxy,” APL Materials 11 (2023) 041102-1 – 041102-12.