Undergraduate Publications

* = Undergraduate Researcher

PUBLICATIONS (listed in reverse chronological order)

1.     H. Paik, J.A. Moyer, T. Spila, J.W. Tashman*, J.A. Mundy, E. Freeman, N. Shukla, J.M. Lapano, R. Engel-Herbert, W. Zander, J. Schubert, D.A. Muller, S. Datta, P. Schiffer, and D.G. Schlom, “Transport Properties of Ultra-Thin VO2 Films on (001) TiO2 Grown by Reactive Molecular-Beam Epitaxy,” Applied Physics Letters 107 (2015) 163101-1 – 163101-5.

2.     T. Mairoser, J.A. Mundy, A. Melville, D. Hodash*, P. Cueva, R. Held, A. Glavic, J. Schubert, D.A. Muller, D.G. Schlom, and A. Schmehl, “High-Quality EuO Thin Films the Easy Way via Topotactic Transformation,” Nature Communications 6 (2015) 7716.

3.     J.A. Mundy, D. Hodash*, A. Melville, R. Held, T. Mairoser, D.A. Muller, L.F. Kourkoutis, A. Schmehl, and D.G. Schlom, “Hetero-Epitaxial EuO Interfaces Studied by Analytic Electron Microscopy,” Applied Physics Letters 104 (2014) 091601-1 – 091601-5.

4.     J.W. Tashman*, J.H. Lee, H. Paik, J.A. Moyer, R. Misra, J.A. Mundy, T. Spila, T.A. Merz*, J. Schubert, D.A. Muller, P. Schiffer, and D.G. Schlom, “Epitaxial Growth of VO2 by Periodic Annealing,” Applied Physics Letters 104 (2014) 063104-1 – 063104-5.

5.     N.F. Quackenbush, J.W. Tashman*, J.A. Mundy, S. Sallis, H. Paik, R. Misra, J.A. Moyer, J.-H. Guo, D.A. Fischer, J.C. Woicik, D.A. Muller, D.G. Schlom, and L.F.J. Piper, “Nature of the Metal Insulator Transition in Ultrathin Epitaxial Vanadium Dioxide,” Nano Letters 13 (2013) 4857-4861.

6.     S. Stoughton*, M. Showak*, Q. Mao, P. Koirala, D.A. Hillsberry, S. Sallis, L.F. Kourkoutis, K. Nguyen, L.F.J. Piper, D.A. Tenne, N.J. Podraza, D.A. Muller, C. Adamo, and D.G. Schlom, “Adsorption-Controlled Growth of BiVO4 by Molecular-Beam Epitaxy,” APL Materials 1 (2013) 042112-1 – 042112-8.

7.     C.H. Lee, N.D. Orloff, T. Birol, Y. Zhu, V. Goian, E. Rocas, R. Haislmaier, E. Vlahos, J.A. Mundy, L.F. Kourkoutis, Y. Nie, M.D. Biegalski, J. Zhang*, M. Bernhagen, N.A. Benedek, Y. Kim, J.D. Brock, R. Uecker, X.X. Xi, V. Gopalan, D. Nuzhnyy, S. Kamba, D.A. Muller, I. Takeuchi, J.C. Booth, C.J. Fennie, and D.G. Schlom, “Exploiting Dimensionality and Defect Mitigation to Create Tunable Microwave Dielectrics,” Nature 502 (2013) 532-536.

8.     S. Coh, T. Heeg, J.H. Haeni, M.D. Biegalski, J. Lettieri, L.F. Edge, K.E. O’Brien*, M. Bernhagen, P. Reiche, R. Uecker, S. Trolier-McKinstry, D.G. Schlom, and D. Vanderbilt, “Si-Compatible Candidates for High-k Dielectrics with the Pbnm Perovskite Structure,” Physical Review B 82 (2010) 064101-1 – 064101-16.

9.       M.A. Zurbuchen, R.S. Freitas, M.J. Wilson, P. Schiffer, M. Roeckerath, J. Schubert, M.D. Biegalski, G.H. Mehta*, D.J. Comstock*, J.H. Lee, Y. Jia, and D.G. Schlom, “Synthesis and Characterization of an n = 6 Aurivillius Phase Incorporating Magnetically Active Manganese, Bi7(Mn,Ti)6O21,” Applied Physics Letters 91 (2007) 033113-1 – 033113-3.

10.       M.A. Zurbuchen, W. Tian, X.Q. Pan, D. Fong, S.K. Streiffer, M.E. Hawley, J. Lettieri, Y. Jia, G. Asayama, S.J. Fulk*, D.J. Comstock*, S. Knapp, A.H. Carim, and D.G. Schlom, “Morphology, Structure, and Nucleation of Out-of-Phase Boundaries (OPBs) in Epitaxial Films of Layered Oxides,” Journal of Materials Research 22 (2007) 1439-1471.

11.    A.F. Moreira dos Santos, A.K. Cheetham, W. Tian, X.Q. Pan, Y. Jia, N.J. Murphy*, J. Lettieri, and D.G. Schlom, “Epitaxial Growth and Properties of Metastable BiMnO3 Thin Films,” Applied Physics Letters 84 (2004) 91-93.

12.    M.A. Zurbuchen, Y. Jia, S. Knapp*, A.H. Carim, D.G. Schlom, and X.Q. Pan, “Defect Generation by Preferred Nucleation in Epitaxial Sr2RuO4 / LaAlO3,” Applied Physics Letters 83 (2003) 3891-3893.

13.    M.A. Zurbuchen, J. Lettieri, S.J. Fulk*, Y. Jia, A.H. Carim, D.G. Schlom, and S.K. Streiffer, “Bismuth Volatility Effects on the Perfection of SrBi2Nb2O9 and SrBi2Ta2O9 Films,” Applied Physics Letters 82 (2003) 4711-4713.

14.    M.A. Zurbuchen, Y. Jia, S. Knapp*, A.H. Carim, D.G. Schlom, L.‑N. Zou, and Y. Liu, “Suppression of Superconductivity by Crystallographic Defects in Epitaxial Sr2RuO4 Films,” Applied Physics Letters 78 (2001) 2351-2353.

15.    M.K. Lee, C.B. Eom, J. Lettieri, I.W. Scrymgeour*, D.G. Schlom, W. Tian, X.Q. Pan, P.A. Ryan, and F. Tsui, “Epitaxial Thin Films of Hexagonal BaRuO3 on (001) SrTiO3,” Applied Physics Letters 78 (2001) 329-331.

16.    J. Lettieri, Y. Jia, S.J. Fulk*, D.G. Schlom, M.E. Hawley, and G.W. Brown, “Optimization of the Growth of Epitaxial SrBi2Ta2O9 Thin Films by Pulsed Laser Deposition,” Thin Solid Films 379 (2000) 64-71.

17.    J. Lettieri, I.W. Scrymgeour*, D.G. Schlom, M.K. Lee, and C.B. Eom, “Comment on ‘Lattice Deformation and Magnetic Properties in Epitaxial Thin Films of Sr1‑xBaxRuO3’ [Appl. Phys. Lett. 73, 1200 (1999)],” Applied Physics Letters 77 (2000) 600-601.

18.    C.A. Billman, P.H. Tan*, K.J. Hubbard*, and D.G. Schlom, “Alternate Gate Oxides for Silicon MOSFETs using High‑K Dielectrics,” in:  Ultrathin SiO2 and High-K Materials for ULSI Gate Dielectrics, edited by H.R. Huff, C.A. Richter, M.L. Green, G. Lucovsky, and T. Hattori, Vol. 567 (Materials Research Society, Warrendale, 1999), pp. 409-414.

19.    Y. Jia, M.A. Zurbuchen, S. Wozniak*, A.H. Carim, D.G. Schlom, L‑N. Zou, S. Briczinski, and Y. Liu, “Epitaxial Growth of Metastable Ba2RuO4 Films with the K2NiF4 Structure,” Applied Physics Letters 74 (1999) 3830-3832.

20.    D.G. Schlom, Y. Jia, L.‑N. Zou, J.H. Haeni, S. Briczinski, M.A. Zurbuchen, C.W. Leitz*, S. Madhavan, S. Wozniak*, Y. Liu, M.E. Hawley, G.W. Brown, A. Dabkowski, H.A. Dabkowska, R. Uecker, and P. Reiche, “Searching for superconductivity in epitaxial films of copper-free layered oxides with the K2NiF4 structure,” in:  Superconducting and Related Oxides:  Physics and Nanoengineering III, edited by D. Pavuna and I. Bozovic, SPIE Vol. 3481 (SPIE, Bellingham, 1998), pp. 226-240.

21.    J. Lettieri, Y. Jia, M. Urbanik*, C.I. Weber*, J-P. Maria, D.G. Schlom, H. Li, R. Ramesh, R. Uecker, and P. Reiche, “Epitaxial Growth of (001)-Oriented and (110)-Oriented SrBi2Ta2O9 Thin Films,” Applied Physics Letters 73 (1998) 2923-2925.

22.    J. Lettieri, C.I. Weber*, and D.G. Schlom, “Comment on ‘Control of epitaxial growth for SrBi2Ta2O9 thin films’ [Appl. Phys. Lett. 72, 665 (1998)],” Applied Physics Letters 73 (1998) 2057-2058.

23.    D.G. Schlom, S.B. Knapp*, S. Wozniak*, L-N. Zou, J. Park, Y. Liu, M.E. Hawley, G.W. Brown, A. Dabkowski, H.A. Dabkowska, R. Uecker, and P. Reiche, “Growth of Epitaxial (Sr,Ba)n+1RunO3n+1 Films,” Superconductor Science and Technology 10 (1997) 891-895.

24.    D.G. Schlom, B.A. Merritt*, S. Madhavan, Y. Liu, M.E. Hawley, G.W. Brown, A. Dabkowski, H.A. Dabkowska, R. Uecker, and P. Reiche, “Epitaxial YBa2Cu3O7‑d / Sr2RuO4 Heterostructures,” in:  Epitaxial Oxide Thin Films III, edited by D.G. Schlom, C.B. Eom, M.E. Hawley, C.M. Foster, and J.S. Speck, Vol. 474 (Materials Research Society, Pittsburgh, 1997), pp. 85-90.

25.    R.L. Goettler*, J.P. Maria, and D.G. Schlom, “Origin of the (110) Orientation of Y2O3 and CeO2 Epitaxial Films Grown on (100) Silicon,” in:  Epitaxial Oxide Thin Films III, edited by D.G. Schlom, C.B. Eom, M.E. Hawley, C.M. Foster, and J.S. Speck, Vol. 474 (Materials Research Society, Pittsburgh, 1997), pp. 333-338.

26.    J.C. Clark*, J.P. Maria*, K.J. Hubbard*, and D.G. Schlom, “An Oxygen-Compatible Radiant Substrate Heater for Thin-Film Growth at Substrate Temperatures up to 1050 °C,” Review of Scientific Instruments 68 (1997) 2538-2541.

27.    S. Madhavan, J.A. Mitchell, T. Nemoto, S. Wozniak*, Ying Liu, D.G. Schlom, A. Dabkowski, and H.A. Dabkowska, “Growth of Epitaxial Sr2RuO4 Films and YBa2Cu3O7‑d / Sr2RuO4 Heterostructures,” Journal of Crystal Growth 174 (1997) 417-423.

28.    C.J. Kraisinger, D.M. Fusina*, and D.G. Schlom, “Computer Simulation, Design,  and Characterization of a Nozzle for More Effective Delivery of Oxidizing Gases,” in: Epitaxial Oxide Thin Films II, edited by J.S. Speck, D.K. Fork, R.M. Wolf, and T. Shiosaki, Vol. 401 (Materials Research Society, Pittsburgh, 1996), pp. 387-392.

29.    J.L. Lacey* and D.G. Schlom, “c‑axis Oriented Lithium Niobate Films on (001) Magnesium Oxide by Pulsed Laser Deposition,” in: Epitaxial Oxide Thin Films II, edited by J.S. Speck, D.K. Fork, R.M. Wolf, and T. Shiosaki, Vol. 401 (Materials Research Society, Pittsburgh, 1996), pp. 393-398.

30.    K.J. Hubbard* and D.G. Schlom, “Thermodynamic Stability of Binary Oxides in Contact with Silicon,” in: Epitaxial Oxide Thin Films II, edited by J.S. Speck, D.K. Fork, R.M. Wolf, and T. Shiosaki, Vol. 401 (Materials Research Society, Pittsburgh, 1996), pp. 33-38.

31.    D.G. Schlom, E.S. Hellman, E.H. Hartford, Jr., C.B. Eom, J.C. Clark*, and J. Mannhart, “Origin of the ø ~ ±9° Peaks in YBa2Cu3O7‑d Films Grown on Cubic Zirconia Substrates,” Journal of Materials Research 11 (1996) 1336-1348.

32.    K.J. Hubbard* and D.G. Schlom, “Thermodynamic Stability of Binary Oxides in Contact with Silicon,” Journal of Materials Research 11 (1996) 2757-2776.

33.    K.J. Hubbard* and D.G. Schlom, “Thermodynamic Stability of Binary Oxides in Contact with Silicon,” in:  Structure and Properties of Interfaces in Ceramics, edited by D.A. Bonnell, U. Chowdhry, and M. Rühle, Vol. 357 (Materials Research Society, Pittsburgh, 1995), pp. 331-336.

 

B​OOKS AND BOOK CHAPTERS

1.     D.G. Schlom, C.A. Billman, J.H. Haeni, J. Lettieri, P.H. Tan*, R.R.M. Held*, S. Völk*, and K.J. Hubbard*, “High-K Candidates for use as the Gate Dielectric in Silicon MOSFETs,” in:  Thin Films and Heterostructures for Oxide Electronics, edited by S.B. Ogale (Springer, New York, 2005), pp. 31-78.