Oxides beyond SiO2 for MOSFETs Publications

N. Shukla, A.V. Thathachary, A. Agrawal, H. Paik, A. Aziz, D.G. Schlom, S.K. Gupta, R. Engel-Herbert, and S. Datta, “A Steep Slope Transistor based on Abrupt Electronic Phase Transition,” Nature Communications 6 (2015) 7812-1 – 7812-6.

X. Weng, W. Tian, D.G. Schlom, and E.C. Dickey, “Structure and Chemistry of the (111)Sc2O3/(0001) GaN Epitaxial Interface,” Applied Physics Letters 96 (2010) 241901-1 – 241901-3.

P. Somers, A. Stesmans, V.V. Afanas’ev, W. Tian, L.F. Edge, and D.G. Schlom, “Comparative Electron Spin Resonance Study of epi-Lu2O3/(111)Si and a-Lu2O3/(100)Si Interfaces:  Misfit Point Defects,” Journal of Applied Physics 107 (2010) 094502-1 – 094502-12.

A. Ali, S. Koveshnikov, S. Oktyabrsky, R. Kambhampati, T. Heeg, D. Schlom, and S. Datta, “Small-Signal Response of Inversion Layers in High-Mobility In0.53Ga0.47As MOSFETs made with Thin High-k Dielectrics,” IEEE Transactions on Electron Devices 57 (2010) 742-748.

M. Roeckerath, J.M.J. Lopes, E. Durğun Özben, C. Urban, J. Schubert, S. Mantl, Y. Jia, and D.G. Schlom, “Investigation of Terbium Scandate as an Alternative Gate Dielectric in Fully Depleted Transistors,” Applied Physics Letters 96 (2010) 013513-1 – 013513-3.

V.V. Afanas’ev, M. Badylevich, A. Stesmans, A. Laha, H.J. Osten, A. Fissel, W. Tian, L.F. Edge, and D.G. Schlom, “Band Offsets between Si and Epitaxial Rare Earth Sesquioxides (RE2O3, RE=La, Nd, Gd, Lu):  Effect of 4f-Shell Occupancy,” Applied Physics Letters 93 (2008) 192105-1 – 192105-3.

D.G. Schlom, S. Guha, and S. Datta, “Gate Oxides Beyond SiO2,” MRS Bulletin 33 (2008) 1017-1025.

A. Stesmans, P. Somers, V.V. Afanas’ev, W. Tian, L.F. Edge, and D.G. Schlom, “Misfit Point Defects at the Epitaxial Lu2O3/(111)Si Interface Revealed by Electron Spin Resonance,” Applied Physics Letters 93 (2008) 103505-1 – 103505-3.

E. Durğun Özben, J.M.J. Lopes, M. Roeckerath, S. Lenk, B. Holländer, Y. Jia, D.G. Schlom, J. Schubert, and S. Mantl, “SmScO3 Thin Films as an Alternative Gate Dielectric,” Applied Physics Letters 93 (2008) 052902-1 – 052902-3.

S. Koveshnikov, C. Adamo, V. Tokranov, M. Yakimov, R. Kambhampati, M. Warusawithana, D.G. Schlom, W. Tsai, and S. Oktyabrsky, “Thermal Stability of Electrical and Structural Properties of GaAs-based Metal-Oxide-Semiconductor Capacitors with an Amorphous LaAlO3 Gate Oxide,” Applied Physics Letters 93 (2008) 012903-1 – 012903-3.

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