Integrating Functional Oxides with Semiconductors Publications

A. Schmehl, V. Vaithyanathan, A. Herrnberger, S. Thiel, C. Richter, M. Liberati, T. Heeg, M. Röckerath, L.F. Kourkoutis, S. Mühlbauer, P. Böni, D.A. Muller, Y. Barash, J. Schubert, Y. Idzerda, J. Mannhart, and D.G. Schlom, “Epitaxial Integration of the Highly Spin-Polarized Ferromagnetic Semiconductor EuO with Silicon and GaN,” Nature Materials 6 (2007) 882-887.

L.W. Martin, Y.-H. Chu, Q. Zhan, R. Ramesh, S.-J. Han, S.X. Wang, M. Warusawithana, and D.G. Schlom, “Room Temperature Exchange Bias and Spin Valves Based on BiFeO3/SrRuO3/SrTiO3/Si (001) Heterostructures,” Applied Physics Letters 91 (2007) 172513-1 – 172513-3.

S. Gsell, M. Fischer, R. Brescia, M. Schreck, P. Huber, F. Bayer, B. Stritzker, and D.G. Schlom, “Reduction of Mosaic Spread using Iridium Interlayers:  A Route to Improved Oxide Heteroepitaxy on Silicon,” Applied Physics Letters 91 (2007) 061501-1 – 061501-3.

S.Y. Yang, Q. Zhan, P.L. Yang, M.P. Cruz, Y.H. Chu, R. Ramesh, Y.R. Wu, J. Singh, W. Tian, and D.G. Schlom, “Capacitance-Voltage Characteristics of BiFeO3/SrTiO3/GaN Heteroepitaxial Structures,” Applied Physics Letters 91 (2007) 022909-1 – 022909-3.

W. Tian, V. Vaithyanathan, D.G. Schlom, Q. Zhan, S.Y. Yang, Y.H. Chu, and R. Ramesh, “Epitaxial Integration of (0001) BiFeO3 with (0001) GaN,” Applied Physics Letters 90 (2007) 172908-1 – 172908-3.

V. Vaithyanathan, J. Lettieri, W. Tian, A. Kochhar, H. Ma, A. Sharan, A. Vasudevarao, V. Gopalan, Y. Li, L.Q. Chen, P. Zschack, J.C. Woicik, J. Levy, and D.G. Schlom, “c-Axis Oriented Epitaxial BaTiO3 Films on (001) Si,” Journal of Applied Physics 100 (2006) 024108-1 – 024108-9.

L.V. Goncharova, D.G. Starodub, E. Garfunkel, T. Gustafsson, V. Vaithyanathan, J. Lettieri, and D.G. Schlom, “Interface Structure and Thermal Stability of Epitaxial SrTiO3 Thin Films on Si (001),” Journal of Applied Physics 100 (2006) 014912-1 – 014912-6.

E.M. Campo, S. Nakahara, T. Hierl, J.C.M. Hwang, Y.P. Chen, G. Brill, N.K. Dhar, V. Vaithyanathan, D.G. Schlom, X.-M. Fang, and J.M. Fastenau, “Epitaxial Growth of CdTe on Si through Perovskite Oxide Buffers,” Journal of Electronic Materials 35 (2006) 1219-1223.

D.M. Kim, C.B. Eom, V. Nagarajan, J. Ouyang, R. Ramesh, V. Vaithyanathan, and D.G. Schlom, “Thickness Dependence of Structural and Piezoelectric Properties of Epitaxial Pb(Zr0.52Ti0.48)O3 Films on Si and SrTiO3 Substrates,” Applied Physics Letters 88 (2006) 142904-1 – 142904-3.

J.Q. He, C.L. Jia, V. Vaithyanathan, D.G. Schlom, J. Schubert, A. Gerber, H.H. Kohlstedt, and R.H. Wang, “Interfacial Reaction in the Growth of Epitaxial SrTiO3 Thin Films on (001) Si Substrates,” Journal of Applied Physics 97 (2005) 104921-1 – 104921-6.

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